Compared with a sinusoidal operation, pulsed operation has more homogeneity and more efficiency in dielectric barrier discharge. In this paper, an improved pulse adder is designed and assembled to create repetitive hi...Compared with a sinusoidal operation, pulsed operation has more homogeneity and more efficiency in dielectric barrier discharge. In this paper, an improved pulse adder is designed and assembled to create repetitive high voltage rectangular pulses when resistive loads or capacitive loads exist. Beyond the normal pulse adder based on solid-state switches, additional metal- oxide-semiconductor field effect transistors are used in each stage for a faster falling edge. Further, the voltage difference between stages is eliminated by balancing windings. In this paper, we represent our theoretical derivation, software simulations and hardware experiments on magnetic self-balance. The experiments show that the voltage difference between stages is eliminated by balancing windings, which matches the result of simulations with almost identical circuits and parameters.展开更多
A new SOl self-balance （SB） super-junction （S J） pLDMOS with a self-adaptive charge （SAC） layer and its physical model are presented. The SB is an effective way to realize charges balance （CB）. The substrate-a...A new SOl self-balance （SB） super-junction （S J） pLDMOS with a self-adaptive charge （SAC） layer and its physical model are presented. The SB is an effective way to realize charges balance （CB）. The substrate-assisted depletion （SAD） effect of the lateral SJ is eliminated by the self-adaptive inversion electrons provided by the SAC. At the same time, high concentration dynamic self-adaptive electrons effectively enhance the electric field （EI） of the dielectric buried layer and increase breakdown voltage （BV）. E1 = 600 V/μm and BV =- 237 V are obtained by 3D simulation on a 0.375-μm-thick dielectric layer and a 2.5-μm-thick top silicon layer. The optimized structure realizes the specific on resistance （Ron,sp） of 0.01319Ω·cm2, FOM （FOM = BV2/R p） of 4.26 MW/cm2 under a 11 μm length （Ld） drift region.展开更多
文摘Compared with a sinusoidal operation, pulsed operation has more homogeneity and more efficiency in dielectric barrier discharge. In this paper, an improved pulse adder is designed and assembled to create repetitive high voltage rectangular pulses when resistive loads or capacitive loads exist. Beyond the normal pulse adder based on solid-state switches, additional metal- oxide-semiconductor field effect transistors are used in each stage for a faster falling edge. Further, the voltage difference between stages is eliminated by balancing windings. In this paper, we represent our theoretical derivation, software simulations and hardware experiments on magnetic self-balance. The experiments show that the voltage difference between stages is eliminated by balancing windings, which matches the result of simulations with almost identical circuits and parameters.
基金Project supported by the National Natural Science Foundation of China(No.61306094)the Project of Sichuan Provincial Education Department(No.13ZA0089)the Research Fund for the Middle and Youth Academic Leader of Chengdu University of Information Technology(No.J201301)
文摘A new SOl self-balance （SB） super-junction （S J） pLDMOS with a self-adaptive charge （SAC） layer and its physical model are presented. The SB is an effective way to realize charges balance （CB）. The substrate-assisted depletion （SAD） effect of the lateral SJ is eliminated by the self-adaptive inversion electrons provided by the SAC. At the same time, high concentration dynamic self-adaptive electrons effectively enhance the electric field （EI） of the dielectric buried layer and increase breakdown voltage （BV）. E1 = 600 V/μm and BV =- 237 V are obtained by 3D simulation on a 0.375-μm-thick dielectric layer and a 2.5-μm-thick top silicon layer. The optimized structure realizes the specific on resistance （Ron,sp） of 0.01319Ω·cm2, FOM （FOM = BV2/R p） of 4.26 MW/cm2 under a 11 μm length （Ld） drift region.
