This work investigates internal plasma process parameters using a hairpin resonance probe and optical emission spectroscopy. The dependence of electron density and atomic fluorine on the percentage of oxygen in an SF6...This work investigates internal plasma process parameters using a hairpin resonance probe and optical emission spectroscopy. The dependence of electron density and atomic fluorine on the percentage of oxygen in an SF6/O2 discharge was measured using these methods. An RIE Oxford Instruments 80 plus chamber was used for the experiments. Two different process powers （100 W and 300 W） at a constant pressure （100 mTorr） were used, and it was found that the optical emission intensity of the 703.7 nm and 685.6 nm lines of atomic fluorine increased rapidly as oxygen was added to the SF6 discharge, reached their maximum at an O2 fraction of 20% and then decreased with further addition of oxygen. The plasma electron density was also strongly influenced by the addition of O2.展开更多
The mask-free SF6/O2 plasma etching technique is used to produce surface texturization of mc-silicon solar cells for efficient light trapping in this work. The SEM images and mc-silicon etching rate show the influence...The mask-free SF6/O2 plasma etching technique is used to produce surface texturization of mc-silicon solar cells for efficient light trapping in this work. The SEM images and mc-silicon etching rate show the influence of plasma power, SF6/O2 flow ratios and etching time on textured surface. With the acidic-texturing samples as a reference, the reflection and IQE spectra are obtained under different experimental conditions. The IQE spectrum measurement shows an evident increase in the visible and infrared responses. By using the optimized plasma power, SF6/O2 flow ratios and etching time, the optimal etticiency of 15.7% on 50 × 50mm2 reactive ion etching textured mc-silicon silicon solar ceils is achieved, mostly due to the improvement in the short-circuit current density. The corresponding open-circuit voltage, short-circuit current density and fill factor are 611 m V, 33.6 mA/cm2, 76.5%, respectively. It is believed that such a low-cost and high-performance texturization process is promising for large-scale industrial silicon solar cell manufacturing.展开更多
SF_6气体由于其优异的电气性能而广泛应用于电力行业,然而,由于其全球变暖潜能值极高,国内外学者在过去的几十年里对SF_6替代气体做了广泛研究,但由于它们都各有缺陷,故很难在实际生产中加以应用。文中以C_5F_(10)O/CO_2混合气体作为主...SF_6气体由于其优异的电气性能而广泛应用于电力行业,然而,由于其全球变暖潜能值极高,国内外学者在过去的几十年里对SF_6替代气体做了广泛研究,但由于它们都各有缺陷,故很难在实际生产中加以应用。文中以C_5F_(10)O/CO_2混合气体作为主要研究对象、以SF_6气体作为对照,研究了混合气体中C_5F_(10)O分压力分别为20 k Pa和40 k Pa、总压力为0.1~0.5 MPa时的工频耐压和雷电冲击(lightning impulse,LI)性能,并分析了其作为SF_6替代气体的可能性。实验结果表明,0.2 MPa的混合气体中混入20 k Pa和40 k Pa的C_5F_(10)O,可分别使混合气体的工频放电电压达到相同气压下SF_6气体的61.89%和81.99%。C_5F_(10)O分压力40 k Pa、总压力0.5 MPa的混合气体正、负极性雷电冲击放电电压分别是0.3 MPa时SF_6气体的88.9%和89.9%。因此,通过增加C_5F_(10)O的含量或提高混合气体的总压力,均可有效提高混合气体的绝缘性能,其中,前者更为有效。展开更多
鉴于SiC材料具有很强的稳定性以及湿法刻蚀的种种缺点,目前主要使用干法刻蚀来刻蚀SiC材料。但是干法刻蚀后样品表面的粗糙度对器件的性能有一定的影响。针对这一问题,采用电感耦合等离子体-反应离子刻蚀技术,对SiC材料进行SF_6/O_2混...鉴于SiC材料具有很强的稳定性以及湿法刻蚀的种种缺点,目前主要使用干法刻蚀来刻蚀SiC材料。但是干法刻蚀后样品表面的粗糙度对器件的性能有一定的影响。针对这一问题,采用电感耦合等离子体-反应离子刻蚀技术,对SiC材料进行SF_6/O_2混合气体和SF_6/CF4/O_2混合气体的刻蚀,并且探究了压强、ICP功率和混合气体比例对样品表面粗糙度的影响。实验结果表明使用SF_6/O_2混合气体刻蚀后,样品的表面平整度较好。在一定RIE功率条件下,当ICP功率为700 W、压强为20 m T和SF_6/O_2为50/40 sccm时,样品表面的粗糙度最小。展开更多
基金supported by the EC Framework 7 IMPROVE research project (IR -2008-0013)the Science Foundation Ireland PRECISION project (08-SRC-I1411)
文摘This work investigates internal plasma process parameters using a hairpin resonance probe and optical emission spectroscopy. The dependence of electron density and atomic fluorine on the percentage of oxygen in an SF6/O2 discharge was measured using these methods. An RIE Oxford Instruments 80 plus chamber was used for the experiments. Two different process powers （100 W and 300 W） at a constant pressure （100 mTorr） were used, and it was found that the optical emission intensity of the 703.7 nm and 685.6 nm lines of atomic fluorine increased rapidly as oxygen was added to the SF6 discharge, reached their maximum at an O2 fraction of 20% and then decreased with further addition of oxygen. The plasma electron density was also strongly influenced by the addition of O2.
基金Supported by the National Natural Science Foundation of China under Grant No 61306076the Youth Innovation Promotion of Chinese Academy under Grant No Y510411C31
文摘The mask-free SF6/O2 plasma etching technique is used to produce surface texturization of mc-silicon solar cells for efficient light trapping in this work. The SEM images and mc-silicon etching rate show the influence of plasma power, SF6/O2 flow ratios and etching time on textured surface. With the acidic-texturing samples as a reference, the reflection and IQE spectra are obtained under different experimental conditions. The IQE spectrum measurement shows an evident increase in the visible and infrared responses. By using the optimized plasma power, SF6/O2 flow ratios and etching time, the optimal etticiency of 15.7% on 50 × 50mm2 reactive ion etching textured mc-silicon silicon solar ceils is achieved, mostly due to the improvement in the short-circuit current density. The corresponding open-circuit voltage, short-circuit current density and fill factor are 611 m V, 33.6 mA/cm2, 76.5%, respectively. It is believed that such a low-cost and high-performance texturization process is promising for large-scale industrial silicon solar cell manufacturing.
文摘SF_6气体由于其优异的电气性能而广泛应用于电力行业,然而,由于其全球变暖潜能值极高,国内外学者在过去的几十年里对SF_6替代气体做了广泛研究,但由于它们都各有缺陷,故很难在实际生产中加以应用。文中以C_5F_(10)O/CO_2混合气体作为主要研究对象、以SF_6气体作为对照,研究了混合气体中C_5F_(10)O分压力分别为20 k Pa和40 k Pa、总压力为0.1~0.5 MPa时的工频耐压和雷电冲击(lightning impulse,LI)性能,并分析了其作为SF_6替代气体的可能性。实验结果表明,0.2 MPa的混合气体中混入20 k Pa和40 k Pa的C_5F_(10)O,可分别使混合气体的工频放电电压达到相同气压下SF_6气体的61.89%和81.99%。C_5F_(10)O分压力40 k Pa、总压力0.5 MPa的混合气体正、负极性雷电冲击放电电压分别是0.3 MPa时SF_6气体的88.9%和89.9%。因此,通过增加C_5F_(10)O的含量或提高混合气体的总压力,均可有效提高混合气体的绝缘性能,其中,前者更为有效。
文摘鉴于SiC材料具有很强的稳定性以及湿法刻蚀的种种缺点,目前主要使用干法刻蚀来刻蚀SiC材料。但是干法刻蚀后样品表面的粗糙度对器件的性能有一定的影响。针对这一问题,采用电感耦合等离子体-反应离子刻蚀技术,对SiC材料进行SF_6/O_2混合气体和SF_6/CF4/O_2混合气体的刻蚀,并且探究了压强、ICP功率和混合气体比例对样品表面粗糙度的影响。实验结果表明使用SF_6/O_2混合气体刻蚀后,样品的表面平整度较好。在一定RIE功率条件下,当ICP功率为700 W、压强为20 m T和SF_6/O_2为50/40 sccm时,样品表面的粗糙度最小。
