设计了一种将薄膜 a- Si PIN光敏传感单元与 OL ED有机发光显示单元合二为一的新型图像传感显示器件 ;通过对每个单元的分别建模以及叠层器件的串联结构特点 ,对器件单元像素的电流电压特性进行了模拟 .结果表明 :器件驱动电压的降低主...设计了一种将薄膜 a- Si PIN光敏传感单元与 OL ED有机发光显示单元合二为一的新型图像传感显示器件 ;通过对每个单元的分别建模以及叠层器件的串联结构特点 ,对器件单元像素的电流电压特性进行了模拟 .结果表明 :器件驱动电压的降低主要通过增大 OL ED的幂指数因子实现 ;薄膜 a- Si PIN的灵敏度对器件灵敏度有决定性的影响 ;降低 a- Si PIN隙态密度能有效地展宽器件的线性响应区域 ;器件应用领域的不同 ,对 a- Si PIN的并联等效电阻的大小有不同的要求 .展开更多
We perform a comparative st udy on the electroluminescence (EL) and photoluminescence (PL) of Si nanocrystaldoped SiO2 (nc-Si:SiO2) and SiO2, and clarify whether the contribution from Si nanocrystals in the EL ...We perform a comparative st udy on the electroluminescence (EL) and photoluminescence (PL) of Si nanocrystaldoped SiO2 (nc-Si:SiO2) and SiO2, and clarify whether the contribution from Si nanocrystals in the EL of nc-Si:SiO2 truly exists. The results unambiguously indicate the presence of EL of Si nanocrystals. The difference of peak positions between the EL and PL spectra are discussed. It is found that the normal method of passivation to enhance the PL of Si nanocrystals is not equally effective for the EL, hence new methods need to be explored to promote the EL of Si nanocrystals.展开更多
文摘设计了一种将薄膜 a- Si PIN光敏传感单元与 OL ED有机发光显示单元合二为一的新型图像传感显示器件 ;通过对每个单元的分别建模以及叠层器件的串联结构特点 ,对器件单元像素的电流电压特性进行了模拟 .结果表明 :器件驱动电压的降低主要通过增大 OL ED的幂指数因子实现 ;薄膜 a- Si PIN的灵敏度对器件灵敏度有决定性的影响 ;降低 a- Si PIN隙态密度能有效地展宽器件的线性响应区域 ;器件应用领域的不同 ,对 a- Si PIN的并联等效电阻的大小有不同的要求 .
基金Supported by the National Natural Science Foundation of China under Grant No 60638010, and the Ministry of Education of China under Grant No 20060246028.
文摘We perform a comparative st udy on the electroluminescence (EL) and photoluminescence (PL) of Si nanocrystaldoped SiO2 (nc-Si:SiO2) and SiO2, and clarify whether the contribution from Si nanocrystals in the EL of nc-Si:SiO2 truly exists. The results unambiguously indicate the presence of EL of Si nanocrystals. The difference of peak positions between the EL and PL spectra are discussed. It is found that the normal method of passivation to enhance the PL of Si nanocrystals is not equally effective for the EL, hence new methods need to be explored to promote the EL of Si nanocrystals.