We demonstrate a novel Si-rich SiN bilayer passivation technology for AlGaN/GaN high electron mobility transistors(HEMTs)with thin-barrier to minimize surface leakage current to enhance the breakdown voltage.The bilay...We demonstrate a novel Si-rich SiN bilayer passivation technology for AlGaN/GaN high electron mobility transistors(HEMTs)with thin-barrier to minimize surface leakage current to enhance the breakdown voltage.The bilayer SiN with 20-nm Si-rich SiN and 100-nm Si_(3)N_(4) was deposited by plasma-enhanced chemical vapor deposition(PECVD)after removing 20-nm SiO_(2)pre-deposition layer.Compared to traditional Si_(3)N_(4) passivation for thin-barrier AlGaN/GaN HEMTs,Si-rich SiN bilayer passivation can suppress the current collapse ratio from 18.54%to 8.40%.However,Si-rich bilayer passivation leads to a severer surface leakage current,so that it has a low breakdown voltage.The 20-nm SiO_(2)pre-deposition layer can protect the surface of HEMTs in fabrication process and decrease Ga–O bonds,resulting in a lower surface leakage current.In contrast to passivating Si-rich SiN directly,devices with the novel Si-rich SiN bilayer passivation increase the breakdown voltage from 29 V to 85 V.Radio frequency(RF)small-signal characteristics show that HEMTs with the novel bilayer SiN passivation leads to f_(T)/f_(max) of 68 GHz/102 GHz.At 30 GHz and V_(DS)=20 V,devices achieve a maximum P_(out) of 5.2 W/mm and a peak power-added efficiency(PAE)of 42.2%.These results indicate that HEMTs with the novel bilayer SiN passivation can have potential applications in the millimeter-wave range.展开更多
The CDE hydrothermal field was first discovered during a Chinese cruise to the East Lau Basin Spreading Centre in 2007. Apart from significant amounts of loose Fe-Si-Mn （oxyhydr） oxide （referred to as oxide below）...The CDE hydrothermal field was first discovered during a Chinese cruise to the East Lau Basin Spreading Centre in 2007. Apart from significant amounts of loose Fe-Si-Mn （oxyhydr） oxide （referred to as oxide below） precipitates, a small Si-rich oxide chimney was also recovered on this cruise. In this study, we report on the mineralogical and geochemical analyses of this chimney and a model for its growth that has been developed. Based on the mineralogy and O isotope results, the chimney walls can be divided into four growth generations （layers） from the inner to the outer layers： amorphous opal and barite layer （pre- cipitation temperature 68.5℃ based on oxygen isotope determinations）, a rod-like amorphous layer （precipitation temperature 39.6℃）, a filamentous Fe-Si oxide layer, and an outer Fe-Mn oxide layer. Investigations based on SEM and EDS showed that neutrophilic Fe-oxidizing bacteria play an important role in the formation of this chimney, particularly in the outer two genera- tions. In the first stage, the metabolic activity of the microbes results in the pervasive precipitation of the filamentous Fe-rich oxides inside a ring formed by some amorphous opal and barite; therefore, a loose porous layer forms. In the second stage, amorphous opal then precipitates inside this wall as a result of conductive cooling and gradually controls the mixing between the hydrothermal fluids and ambient seawaters. In the third stage, barite and some amorphous opal form from the higher tem- perature fluids at the summit of the chimney growth history. In the last stage, the chimney wall becomes thicker and denser and the exchange of hydrothermal fluids and seawater ceases. As a result, a Fe-Mn oxide layer precipitates onto the outer surface of the chimney wall as neutrophilic Fe-oxidizing bacteria reoccupy the surface of the chimney. This mineral sequence and the resultant growth generations are confirmed by the chemical characteristics of the chimney wall. Sr isotopes extracted from the Fe oxides of the four-generation wall generally show a decreasing trend of the 87Sr/86Sr ratios from the second layer to the in- ner layer （from 0.707008 to 0.705877） except for the outer layer （0.706502）. The Sr isotope and chondrite normalized REE patterns of the corresponding bulk samples from the chimney wall also display a similar trend. Our study shows that the bio- genic filament network plays a key role in the formation of the chimney in contrast to previous growth models of higher temperature chimneys, which often ignore the influence of biogenic factors.展开更多
基金Project supported by the National Key Research and Development Program of China(Grant No.2020YFB1804902)the National Natural Science Foundation of China(Grant Nos.61904135,62090014,and 11690042)+4 种基金the Fundamental Research Funds for the Central Universities,the Innovation Fund of Xidian University(Grant No.YJS2213)the China Postdoctoral Science Foundation(Grant Nos.2018M640957 and BX20200262)the Key Research and Development Program of Guangzhou(Grant No.202103020002)Wuhu and Xidian University Special Fund for Industry–University-Research Cooperation(Grant No.XWYCXY-012021014HT)the Fundamental Research Funds for the Central Universities,China(Grant No.XJS221110)。
文摘We demonstrate a novel Si-rich SiN bilayer passivation technology for AlGaN/GaN high electron mobility transistors(HEMTs)with thin-barrier to minimize surface leakage current to enhance the breakdown voltage.The bilayer SiN with 20-nm Si-rich SiN and 100-nm Si_(3)N_(4) was deposited by plasma-enhanced chemical vapor deposition(PECVD)after removing 20-nm SiO_(2)pre-deposition layer.Compared to traditional Si_(3)N_(4) passivation for thin-barrier AlGaN/GaN HEMTs,Si-rich SiN bilayer passivation can suppress the current collapse ratio from 18.54%to 8.40%.However,Si-rich bilayer passivation leads to a severer surface leakage current,so that it has a low breakdown voltage.The 20-nm SiO_(2)pre-deposition layer can protect the surface of HEMTs in fabrication process and decrease Ga–O bonds,resulting in a lower surface leakage current.In contrast to passivating Si-rich SiN directly,devices with the novel Si-rich SiN bilayer passivation increase the breakdown voltage from 29 V to 85 V.Radio frequency(RF)small-signal characteristics show that HEMTs with the novel bilayer SiN passivation leads to f_(T)/f_(max) of 68 GHz/102 GHz.At 30 GHz and V_(DS)=20 V,devices achieve a maximum P_(out) of 5.2 W/mm and a peak power-added efficiency(PAE)of 42.2%.These results indicate that HEMTs with the novel bilayer SiN passivation can have potential applications in the millimeter-wave range.
基金supported by the National Natural Science Foundation,China (No.52074131)the National Key R&D Project,China (No.2022YFC3900500)+2 种基金the International Technology Cooperation Program of Guangdong Academy of Sciences,China (No.2020GDASYL-20200504001)the Open Competition to Select the Best Candidate of Shangrao,China (No.2021A005)the BL13HB beamline of Shanghai Synchrotron Radiation Facility (SSRF)for providing synchrotron radiation beamtime (Nos.2020-SSRF-PT-011937,2021-SSRF-PT-017645).
基金supported by National Natural Science Foundation of China(Grant Nos.40976045,40976025 and 41006072)
文摘The CDE hydrothermal field was first discovered during a Chinese cruise to the East Lau Basin Spreading Centre in 2007. Apart from significant amounts of loose Fe-Si-Mn （oxyhydr） oxide （referred to as oxide below） precipitates, a small Si-rich oxide chimney was also recovered on this cruise. In this study, we report on the mineralogical and geochemical analyses of this chimney and a model for its growth that has been developed. Based on the mineralogy and O isotope results, the chimney walls can be divided into four growth generations （layers） from the inner to the outer layers： amorphous opal and barite layer （pre- cipitation temperature 68.5℃ based on oxygen isotope determinations）, a rod-like amorphous layer （precipitation temperature 39.6℃）, a filamentous Fe-Si oxide layer, and an outer Fe-Mn oxide layer. Investigations based on SEM and EDS showed that neutrophilic Fe-oxidizing bacteria play an important role in the formation of this chimney, particularly in the outer two genera- tions. In the first stage, the metabolic activity of the microbes results in the pervasive precipitation of the filamentous Fe-rich oxides inside a ring formed by some amorphous opal and barite; therefore, a loose porous layer forms. In the second stage, amorphous opal then precipitates inside this wall as a result of conductive cooling and gradually controls the mixing between the hydrothermal fluids and ambient seawaters. In the third stage, barite and some amorphous opal form from the higher tem- perature fluids at the summit of the chimney growth history. In the last stage, the chimney wall becomes thicker and denser and the exchange of hydrothermal fluids and seawater ceases. As a result, a Fe-Mn oxide layer precipitates onto the outer surface of the chimney wall as neutrophilic Fe-oxidizing bacteria reoccupy the surface of the chimney. This mineral sequence and the resultant growth generations are confirmed by the chemical characteristics of the chimney wall. Sr isotopes extracted from the Fe oxides of the four-generation wall generally show a decreasing trend of the 87Sr/86Sr ratios from the second layer to the in- ner layer （from 0.707008 to 0.705877） except for the outer layer （0.706502）. The Sr isotope and chondrite normalized REE patterns of the corresponding bulk samples from the chimney wall also display a similar trend. Our study shows that the bio- genic filament network plays a key role in the formation of the chimney in contrast to previous growth models of higher temperature chimneys, which often ignore the influence of biogenic factors.
