Silicon Carbide (SiC) machining by traditional methods with regards to its high hardness is not possible. Electro Discharge Machining, among non-traditional machining methods, is used for machining of SiC. The present...Silicon Carbide (SiC) machining by traditional methods with regards to its high hardness is not possible. Electro Discharge Machining, among non-traditional machining methods, is used for machining of SiC. The present work is aimed to optimize the surface roughness and material removal rate of electro discharge machining of SiC parameters simultaneously. As the output parameters are conflicting in nature, so there is no single combination of machining parameters, which provides the best machining performance. Artificial neural network (ANN) with back propagation algorithm is used to model the process. A multi-objective optimization method, non-dominating sorting genetic algorithm-II is used to optimize the process. Affects of three important input parameters of process viz., discharge current, pulse on time (Ton), pulse off time (Toff) on electric discharge machining of SiC are considered. Experiments have been conducted over a wide range of considered input parameters for training and verification of the model. Testing results demonstrate that the model is suitable for predicting the response parameters. A pareto-optimal set has been predicted in this work.展开更多
完成了一种基于ROM结构的直接数字频率合成器(Direct Digital Synthesizer,DDS)的ASIC设计。其中累加器采用进位链和流水线相结合的方式,提高了工作频率的同时降低了资源占用率;ROM模块应用以正弦函数1/4波形对称性为基础,并结合Hutchi...完成了一种基于ROM结构的直接数字频率合成器(Direct Digital Synthesizer,DDS)的ASIC设计。其中累加器采用进位链和流水线相结合的方式,提高了工作频率的同时降低了资源占用率;ROM模块应用以正弦函数1/4波形对称性为基础,并结合Hutchison相交分离法的改进压缩算法,压缩率达到49倍,降低了芯片的功耗和面积。基于SMIC 0.18μm CMOS工艺库完成了后端物理设计和后仿真。该DDS功耗低,面积小,频率分辨率高,可作为高质量的信号源应用于4G移动通信中。展开更多
提出了一种简洁、新颖的SiC MOSFET器件导通电阻模型,该模型采用遗传算法对其不同温度下的导通电阻进行准确描述。相比于传统的导通电阻建模方案,采用进化算法可以准确地得到MOSFET导通电阻与结温之间的关系。并探究了不同种群规模、交...提出了一种简洁、新颖的SiC MOSFET器件导通电阻模型,该模型采用遗传算法对其不同温度下的导通电阻进行准确描述。相比于传统的导通电阻建模方案,采用进化算法可以准确地得到MOSFET导通电阻与结温之间的关系。并探究了不同种群规模、交叉率和变异率对算法的影响。为了验证模型的准确性,采用一款自主封装的1200 V/90 A SiC MOSFET模块去验证模型的静态特性,并与传统导通电阻建模方案进行对比,其最大误差为4.1%。展开更多
为探究机车车轮退化过程中呈现的两阶段特征问题,提出一种基于两阶段维纳过程的车轮剩余寿命预测方法。利用两阶段维纳过程模型建立车轮轮缘退化模型,通过随机化漂移系数表征车轮退化过程中存在的个体差异;利用期望最大化(expectation m...为探究机车车轮退化过程中呈现的两阶段特征问题,提出一种基于两阶段维纳过程的车轮剩余寿命预测方法。利用两阶段维纳过程模型建立车轮轮缘退化模型,通过随机化漂移系数表征车轮退化过程中存在的个体差异;利用期望最大化(expectation maximum,EM)算法及贝叶斯理论实现了退化模型参数的离线估计与在线更新;通过Schwarz信息准则(Schwarz information criterion,SIC)判断并找到车轮退化过程中存在的变点;最后通过某机车车轮实测轮缘退化数据进行了实例验证。结果表明:与单阶段退化模型相比,考虑存在变点的两阶段退化模型更符合现场实际且在车轮80%寿命分位点处预测精度提升了9.42%。剩余寿命预测结果可以为车轮镟修周期的优化提供一定的理论依据。展开更多
文摘Silicon Carbide (SiC) machining by traditional methods with regards to its high hardness is not possible. Electro Discharge Machining, among non-traditional machining methods, is used for machining of SiC. The present work is aimed to optimize the surface roughness and material removal rate of electro discharge machining of SiC parameters simultaneously. As the output parameters are conflicting in nature, so there is no single combination of machining parameters, which provides the best machining performance. Artificial neural network (ANN) with back propagation algorithm is used to model the process. A multi-objective optimization method, non-dominating sorting genetic algorithm-II is used to optimize the process. Affects of three important input parameters of process viz., discharge current, pulse on time (Ton), pulse off time (Toff) on electric discharge machining of SiC are considered. Experiments have been conducted over a wide range of considered input parameters for training and verification of the model. Testing results demonstrate that the model is suitable for predicting the response parameters. A pareto-optimal set has been predicted in this work.
文摘完成了一种基于ROM结构的直接数字频率合成器(Direct Digital Synthesizer,DDS)的ASIC设计。其中累加器采用进位链和流水线相结合的方式,提高了工作频率的同时降低了资源占用率;ROM模块应用以正弦函数1/4波形对称性为基础,并结合Hutchison相交分离法的改进压缩算法,压缩率达到49倍,降低了芯片的功耗和面积。基于SMIC 0.18μm CMOS工艺库完成了后端物理设计和后仿真。该DDS功耗低,面积小,频率分辨率高,可作为高质量的信号源应用于4G移动通信中。
文摘提出了一种简洁、新颖的SiC MOSFET器件导通电阻模型,该模型采用遗传算法对其不同温度下的导通电阻进行准确描述。相比于传统的导通电阻建模方案,采用进化算法可以准确地得到MOSFET导通电阻与结温之间的关系。并探究了不同种群规模、交叉率和变异率对算法的影响。为了验证模型的准确性,采用一款自主封装的1200 V/90 A SiC MOSFET模块去验证模型的静态特性,并与传统导通电阻建模方案进行对比,其最大误差为4.1%。
文摘为探究机车车轮退化过程中呈现的两阶段特征问题,提出一种基于两阶段维纳过程的车轮剩余寿命预测方法。利用两阶段维纳过程模型建立车轮轮缘退化模型,通过随机化漂移系数表征车轮退化过程中存在的个体差异;利用期望最大化(expectation maximum,EM)算法及贝叶斯理论实现了退化模型参数的离线估计与在线更新;通过Schwarz信息准则(Schwarz information criterion,SIC)判断并找到车轮退化过程中存在的变点;最后通过某机车车轮实测轮缘退化数据进行了实例验证。结果表明:与单阶段退化模型相比,考虑存在变点的两阶段退化模型更符合现场实际且在车轮80%寿命分位点处预测精度提升了9.42%。剩余寿命预测结果可以为车轮镟修周期的优化提供一定的理论依据。
