分子束外延生长轻掺杂SiGaAs的光致发光

用具有调制源的分子束外延(MBE)轻掺杂Si生长出GaAs层,并利用低温光致发光测定了它的特性。在光致发光光谱的近带边区观察到了自由激子和束缚激子发射。与杂质有关的发射在光谱特性上发生改变,这可归因于MBE生长中Si分子束的调制发生了变化。在MBE生长过程中,根据提供As源期间内供Si的时间,掺入的硅原子既可成为施主,也可成为受主。通过改变供Si时间,在定域格位上完成了Si掺杂。

Double Donor Behavior of EL2 Defect in Photoquenching Experiment

The double donor behavior of EL2 defect in SIGaAs was demonstrated by the photoquenching experiment. The experimental method proposed in this work can be used to measure the electrical compensation ratio and estimate the thermal stability of the material.