In order to improve the total-dose radiation har dness of the buried oxides(BOX) in the structure of separation-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI),nitrogen ions are implanted into the buried oxides w...In order to improve the total-dose radiation har dness of the buried oxides(BOX) in the structure of separation-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI),nitrogen ions are implanted into the buried oxides with two different doses,2×10 15 and 3×10 15 cm -2 ,respectively.The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source.Despite the small difference between the doses of nitrogen implantation,the nitrogen-implanted 2×10 15 cm -2 BOX has a much higher hardness than the control sample (i.e.the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5×104rad(Si),whereas the nitrogen-implanted 3×10 15 cm -2 BOX has a lower hardness than uhe control sample.However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5×104 to 5×105rad (Si)).The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed.In addition,the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained.展开更多
To overcome the floating-body effect and self-heating effect of SOI devices,the drain and source on insulator (DSOI) structure is fabricated and tested.The low dose developed recently and low energy local SIMOX techno...To overcome the floating-body effect and self-heating effect of SOI devices,the drain and source on insulator (DSOI) structure is fabricated and tested.The low dose developed recently and low energy local SIMOX technology combined with the conventional CMOS technology is used to fabricate this kind of devices.Using this method,DSOI,SOI,and bulk MOSFETs are successfully integrated on a single chip.Test results show that the drain induced barrier lowering effect is suppressed.The breakdown voltage drain-to-source is greatly increased for DSOI devices due to the elimination of the floating-body effect.And the self-heating effect is also reduced and thus the reliability increased.At the same time,the advantage of SOI devices in speed is maintained.The technology makes it possible to integrate low voltage,low power,low speed SOI devices or high voltage,high power,high speed DSOI devices on one chip and it offers option for developing system-on-chip technology.展开更多
文摘In order to improve the total-dose radiation har dness of the buried oxides(BOX) in the structure of separation-by-implanted-oxygen(SIMOX) silicon-on-insulator(SOI),nitrogen ions are implanted into the buried oxides with two different doses,2×10 15 and 3×10 15 cm -2 ,respectively.The experimental results show that the radiation hardness of the buried oxides is very sensitive to the doses of nitrogen implantation for a lower dose of irradiation with a Co-60 source.Despite the small difference between the doses of nitrogen implantation,the nitrogen-implanted 2×10 15 cm -2 BOX has a much higher hardness than the control sample (i.e.the buried oxide without receiving nitrogen implantation) for a total-dose irradiation of 5×104rad(Si),whereas the nitrogen-implanted 3×10 15 cm -2 BOX has a lower hardness than uhe control sample.However,this sensitivity of radiation hardness to the doses of nitrogen implantation reduces with the increasing total-dose of irradiation (from 5×104 to 5×105rad (Si)).The radiation hardness of BOX is characterized by MOS high-frequency (HF) capacitance-voltage (C-V) technique after the top silicon layers are removed.In addition,the abnormal HF C-V curve of the metal-silicon-BOX-silicon(MSOS) structure is observed and explained.
文摘To overcome the floating-body effect and self-heating effect of SOI devices,the drain and source on insulator (DSOI) structure is fabricated and tested.The low dose developed recently and low energy local SIMOX technology combined with the conventional CMOS technology is used to fabricate this kind of devices.Using this method,DSOI,SOI,and bulk MOSFETs are successfully integrated on a single chip.Test results show that the drain induced barrier lowering effect is suppressed.The breakdown voltage drain-to-source is greatly increased for DSOI devices due to the elimination of the floating-body effect.And the self-heating effect is also reduced and thus the reliability increased.At the same time,the advantage of SOI devices in speed is maintained.The technology makes it possible to integrate low voltage,low power,low speed SOI devices or high voltage,high power,high speed DSOI devices on one chip and it offers option for developing system-on-chip technology.
