An arc model in SiO2 current-limiting fuse has been put forward. Through taking into account the comprehensive effects such as: fundamental action process among particles of arc column, geometrical and external circui...An arc model in SiO2 current-limiting fuse has been put forward. Through taking into account the comprehensive effects such as: fundamental action process among particles of arc column, geometrical and external circuit characteristics of arc column, physical procedure in arc column and in cathode and anode, and power equilibrium in arc column plasma et al., parameters such as the temperature, length, volumn, pressure, arc voltage, arc current et al. in the arc column can be obtained by the model. In view of the serious nonlinearity and huge difference among parameters in the equation set of the model, via analysis on these equations, two solution methods for the equations of the model have been presented with a basic accordance between calculated results and test results.展开更多
The interface defects at the Si/SiO_2 interface in ρ-type silicon (111) MOS structures have been studied by the DLTS method. A dominant defect H_(it),(0.503) at the Si/SiO_2 interface has been found. Its characterist...The interface defects at the Si/SiO_2 interface in ρ-type silicon (111) MOS structures have been studied by the DLTS method. A dominant defect H_(it),(0.503) at the Si/SiO_2 interface has been found. Its characteristics are (i) the average hole ionization Gibbs free energy △G_p≥0.503 eV; (ii) by changing the gate bias when the distance from Fermi level to the top of Si valence band at the Si/SiO_2 interface is less than △G_p there is still the strong DLTS peak; (iii) its hole apparent activation energy increases with the dectease of the height of semiconductor surface potential barrier; and (iv) its hole capture process causes the multiexponential capacitance transience as a function of pulse width and the H_(it)(0.503) level are very difficult to be fully filled with the holes introduced by thepulst with alimited width. All above show that there is a continuous transition energy band between the energy bands of the covalent crystal silicon and the SiO_2 in the Si/SiO_2 systems formed by thermal oxidation; the dominant defect H_(it)(0.503) is distributed in the transition region, and the distance of H_(it)(0.503) level from the top of the valence band increases with the distance from the silicon surface.展开更多
文摘An arc model in SiO2 current-limiting fuse has been put forward. Through taking into account the comprehensive effects such as: fundamental action process among particles of arc column, geometrical and external circuit characteristics of arc column, physical procedure in arc column and in cathode and anode, and power equilibrium in arc column plasma et al., parameters such as the temperature, length, volumn, pressure, arc voltage, arc current et al. in the arc column can be obtained by the model. In view of the serious nonlinearity and huge difference among parameters in the equation set of the model, via analysis on these equations, two solution methods for the equations of the model have been presented with a basic accordance between calculated results and test results.
基金Project supported by the National Natural Science Foundation of China.
文摘The interface defects at the Si/SiO_2 interface in ρ-type silicon (111) MOS structures have been studied by the DLTS method. A dominant defect H_(it),(0.503) at the Si/SiO_2 interface has been found. Its characteristics are (i) the average hole ionization Gibbs free energy △G_p≥0.503 eV; (ii) by changing the gate bias when the distance from Fermi level to the top of Si valence band at the Si/SiO_2 interface is less than △G_p there is still the strong DLTS peak; (iii) its hole apparent activation energy increases with the dectease of the height of semiconductor surface potential barrier; and (iv) its hole capture process causes the multiexponential capacitance transience as a function of pulse width and the H_(it)(0.503) level are very difficult to be fully filled with the holes introduced by thepulst with alimited width. All above show that there is a continuous transition energy band between the energy bands of the covalent crystal silicon and the SiO_2 in the Si/SiO_2 systems formed by thermal oxidation; the dominant defect H_(it)(0.503) is distributed in the transition region, and the distance of H_(it)(0.503) level from the top of the valence band increases with the distance from the silicon surface.
