SiO2 glassy materials with Ge crystals embedded were formed by heating GeO2/SiO2 glass at 700 in the presence of hydrogen. GeO2/SiO2 glass was prepared with the sol-gel technique. The Ge/SiO2 samples show a special ph...SiO2 glassy materials with Ge crystals embedded were formed by heating GeO2/SiO2 glass at 700 in the presence of hydrogen. GeO2/SiO2 glass was prepared with the sol-gel technique. The Ge/SiO2 samples show a special photoluminescence property and exhibit strong luminescence at 392 nm（3.12 eV）, secondary strong luminescence at 600 nm（2.05 eV） and weak luminescence at 770 nm（1.60 eV） when excited under 246 nm（5.01 eV） ultra-violet light at room temperature. The structure of this new luminescence material was studied with XRD, XPS, and TEM. The results show that the presence of nanometer sized（around 10 nm） Ge and GeO crystals in the SiO2 may cause the three-band photoluminescence. The GeO2/SiO2 glass without going through the reducing process only has GeO2 in the SiO2 glass, and does not show the photo-（luminescence）.展开更多
The Eu-doped SiO2-B2O3-NaF glass was prepared by sol-gel process, using tetraethoxy Silicane, boric acid and sodium fluoride as starting materials, 0.10 mol·L-1 EuCl3 solution as the dopant. The luminescent prope...The Eu-doped SiO2-B2O3-NaF glass was prepared by sol-gel process, using tetraethoxy Silicane, boric acid and sodium fluoride as starting materials, 0.10 mol·L-1 EuCl3 solution as the dopant. The luminescent properties of Eu3+ doped SiO2-B2O3-NaF phosphors were investigated. The phosphors showed prominent luminescence in pink, the strong emission of Eu3+ comes from electronic transition of 5D0-7F1(591 nm)and 5D0-7F2(615 nm),which derived from two transition modes of magnetic-dipole and electric-dipole .The peak intensity of 591nm in SiO2-B2O3-NaF matrix is much stronger than it in the other matrixes, it means that SiO2-B2O3-NaF has sensitization on the transition of 5D0-7F1 (Eu3+). If there are broad bonds in the range of 275~380 nm in the excitation spectrum of Eu3+ -doped SiO2-B2O3-NaF glass, the emission peak intensity should be intensified. It is because the electron migration CT band of O2--Eu3+. For all Eu3+ concentrations used, the investigation found that when the mass of fraction got to 29.19×10-3, the luminescence intensity reached the summit. And there is a phenomenon of concentration quenching. Investigation with the same concentration of Eu3+ at different annealed temperature, we found that the sample annealed at 400 ℃, the luminescence intensity achieved its maximum value, and Eu3+ in this matrix had a phenomenon of temperature quenching. The structural characterization of these luminescent materials was carried by used XRD and TEM. The result showed that the phosphor was in amorphous phase.展开更多
文摘SiO2 glassy materials with Ge crystals embedded were formed by heating GeO2/SiO2 glass at 700 in the presence of hydrogen. GeO2/SiO2 glass was prepared with the sol-gel technique. The Ge/SiO2 samples show a special photoluminescence property and exhibit strong luminescence at 392 nm（3.12 eV）, secondary strong luminescence at 600 nm（2.05 eV） and weak luminescence at 770 nm（1.60 eV） when excited under 246 nm（5.01 eV） ultra-violet light at room temperature. The structure of this new luminescence material was studied with XRD, XPS, and TEM. The results show that the presence of nanometer sized（around 10 nm） Ge and GeO crystals in the SiO2 may cause the three-band photoluminescence. The GeO2/SiO2 glass without going through the reducing process only has GeO2 in the SiO2 glass, and does not show the photo-（luminescence）.
文摘The Eu-doped SiO2-B2O3-NaF glass was prepared by sol-gel process, using tetraethoxy Silicane, boric acid and sodium fluoride as starting materials, 0.10 mol·L-1 EuCl3 solution as the dopant. The luminescent properties of Eu3+ doped SiO2-B2O3-NaF phosphors were investigated. The phosphors showed prominent luminescence in pink, the strong emission of Eu3+ comes from electronic transition of 5D0-7F1(591 nm)and 5D0-7F2(615 nm),which derived from two transition modes of magnetic-dipole and electric-dipole .The peak intensity of 591nm in SiO2-B2O3-NaF matrix is much stronger than it in the other matrixes, it means that SiO2-B2O3-NaF has sensitization on the transition of 5D0-7F1 (Eu3+). If there are broad bonds in the range of 275~380 nm in the excitation spectrum of Eu3+ -doped SiO2-B2O3-NaF glass, the emission peak intensity should be intensified. It is because the electron migration CT band of O2--Eu3+. For all Eu3+ concentrations used, the investigation found that when the mass of fraction got to 29.19×10-3, the luminescence intensity reached the summit. And there is a phenomenon of concentration quenching. Investigation with the same concentration of Eu3+ at different annealed temperature, we found that the sample annealed at 400 ℃, the luminescence intensity achieved its maximum value, and Eu3+ in this matrix had a phenomenon of temperature quenching. The structural characterization of these luminescent materials was carried by used XRD and TEM. The result showed that the phosphor was in amorphous phase.
