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An SIT-BJT Operation Model for SITh in the Blocking State
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作者 杨建红 汪再兴 李思渊 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第4期645-649,共5页
A SIT-BJT model is proposed for static induction thyristors (SITh) operation in the blocking state. On the basis of the physical mechanism, this model is presented analytically in terms of governing equations that l... A SIT-BJT model is proposed for static induction thyristors (SITh) operation in the blocking state. On the basis of the physical mechanism, this model is presented analytically in terms of governing equations that link the electrical parameters to the structural parameters. The model is verified by numerical simulation and theoretical analysis. Based on the model, the variations of the electrical parameters such as the potential barrier, the anode junction voltage drop, and the current amplification factor are studied and discussed. 展开更多
关键词 static induction thyristor sit-bjt model current amplification factor
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