向SIMOX材料的SiO2埋层或Si/SiO2界面注入170 keV F+,进而制成CMOS/SOI材料,采用60Co g 辐射器辐照并测量材料的I-V特性。结果表明:向CMOS/SOI材料埋层注入F+离子,能提高CMOS/SOI材料的抗电离辐照性能。而且,注入F+的剂量为11015cm2时,...向SIMOX材料的SiO2埋层或Si/SiO2界面注入170 keV F+,进而制成CMOS/SOI材料,采用60Co g 辐射器辐照并测量材料的I-V特性。结果表明:向CMOS/SOI材料埋层注入F+离子,能提高CMOS/SOI材料的抗电离辐照性能。而且,注入F+的剂量为11015cm2时,材料的抗辐照能力较强。这对制作应用于电离辐射环境的COMS/SOI器件极其有益。展开更多
A power amplifier’s linearity determines the emission signal’s quality and the efficiency of the system.Nonlinear distortion can result in system bit error,out-of-band radiation,and interference with other channels,...A power amplifier’s linearity determines the emission signal’s quality and the efficiency of the system.Nonlinear distortion can result in system bit error,out-of-band radiation,and interference with other channels,which severely influence communication system’s quality and reliability.Starting from the third-order intermodulation point of the milimeter wave(mm-Wave)power amplifiers,the circuit’s nonlinearity is compensated for.The analysis,design,and implementation of linear class AB mm-Wave power amplifiers based on GlobalFoundries 45 nm CMOS silicon-on-insulator(SOI)technology are presented.Three single-ended and differential stacked power amplifiers have been implemented based on cascode cells and triple cascode cells operating in U-band frequencies.According to nonlinear analysis and on-wafer measurements,designs based on triple cascode cells outperform those based on cascode cells.Using single-ended measurements,the differential power amplifier achieves a measured peak power-added efficiency(PAE)of 47.2%and a saturated output power(P_(sat))of 25.2 dBm at 44 GHz.The amplifier achieves a P_(sat)higher than 23 dBm and a maximum PAE higher than 25%in the measured bandwidth from 44 GHz to 50 GHz.展开更多
文摘向SIMOX材料的SiO2埋层或Si/SiO2界面注入170 keV F+,进而制成CMOS/SOI材料,采用60Co g 辐射器辐照并测量材料的I-V特性。结果表明:向CMOS/SOI材料埋层注入F+离子,能提高CMOS/SOI材料的抗电离辐照性能。而且,注入F+的剂量为11015cm2时,材料的抗辐照能力较强。这对制作应用于电离辐射环境的COMS/SOI器件极其有益。
基金Project supported by the National Natural Science Foundation of China(No.62001232)。
文摘A power amplifier’s linearity determines the emission signal’s quality and the efficiency of the system.Nonlinear distortion can result in system bit error,out-of-band radiation,and interference with other channels,which severely influence communication system’s quality and reliability.Starting from the third-order intermodulation point of the milimeter wave(mm-Wave)power amplifiers,the circuit’s nonlinearity is compensated for.The analysis,design,and implementation of linear class AB mm-Wave power amplifiers based on GlobalFoundries 45 nm CMOS silicon-on-insulator(SOI)technology are presented.Three single-ended and differential stacked power amplifiers have been implemented based on cascode cells and triple cascode cells operating in U-band frequencies.According to nonlinear analysis and on-wafer measurements,designs based on triple cascode cells outperform those based on cascode cells.Using single-ended measurements,the differential power amplifier achieves a measured peak power-added efficiency(PAE)of 47.2%and a saturated output power(P_(sat))of 25.2 dBm at 44 GHz.The amplifier achieves a P_(sat)higher than 23 dBm and a maximum PAE higher than 25%in the measured bandwidth from 44 GHz to 50 GHz.
