Clear correspondence between gated-diode R-G current and performance degradation of SOI n-MOSFETs after F-N stress tests

A clear correspondence between the gated-diode generation-recombination （R-G） current and the performance degradation of an SOI n-channel MOS transistor after F-N stress tests has been demonstrated. Due to the increase of interface traps after F-N stress tests, the R-G current of the gated-diode in the SOI-MOSFET architecture increases while the performance characteristics of the MOSFET transistor such as the saturation drain current and sub-threshold slope are degraded. From a series of experimental measurements of the gated-diode and SOI-MOSFET DC characteristics, a linear decrease of the drain saturation current and increase of the threshold voltage as well as a like-line rise of the sub-threshold swing and a corresponding degradation in the trans-conductance are also observed. These results provide theoretical and experimental evidence for us to use the gated-diode tool to monitor SOI-MOSFET degradation.

Electric-field-induced quasi-phase-matched three-wave mixing in silicon-based superlattice-on-insulator integrated circuits

We present a theoretical investigation,based on the tight-binding Hamiltonian,of efficient electric-field-induced three-waves mixing(EFIM)in an undoped lattice-matched short-period superlattice(SL)that integrates quasi-phase-matched(QPM)SL straight waveguides and SL racetrack resonators on an opto-electronic chip.Periodically reversed DC voltage is applied to electrode segments on each side of the strip waveguide.The spectra ofχ_(xxxx)^((3))and of the linear suscepti-bility have been simulated as a function of the number of the atomic monolayers for“non-relaxed”heterointerfaces,and by considering all the transitions between valence and conduction bands.The large ob-tained values ofχ_(xxxx)^((3))make the(ZnS)3/(Si2)3 short-period SL a good candidate for realizing large effective second-order nonlinearity,en-abling future high-performance of the SLOI PICs and OEICs in the 1000-nm and 2000-nm wavelengths ranges.We have made detailed calculations of the efficiency of second-harmonic generation and of the performances of the optical parametric oscillator(OPO).The re-sults indicate that the(ZnS)N/(Si2)M QPM is competitive with present PPLN technologies and is practical for classical and quantum appli-cations.

Classical and quantum photonic sources based upon a nonlinear GaP/Si-superlattice micro-ring resonator

We present a theoretical investigation,based on the tight-binding Hamiltonian,of efficient second-and third-order nonlinear optical processes in the lattice-matched undoped(GaP)N/(Si 2)M short-period superlattice that is waveguide-integrated in a microring resonator on an opto-electronic chip.The nonlinear superlattice structures are sit-uated on the optically pumped input area of a heterogeneous“XOI”chip based on silicon.The spectra ofχ(2)zzz(2ω,ω,ω),χ(2)xzx(2ω,ω,ω),χ(3)xxxx(3ω,ω,ω,ω)and the Kerr refractive index(n 2),have been simu-lated as a function of the number of the atomic monolayers for“non-relaxed”heterointerfaces;These nonlinearities are induced by transi-tions between valence and conduction bands.The large obtained val-ues make the(GaP)N/(Si 2)M short-period superlattice a good can-didate for future high-performance XOI photonic integrated chips that may include Si 3 N 4 or SiC or AlGaAs or Si.Near or at the 810-nm and 1550-nm wavelengths,we have made detailed calculations of the efficiency of second-and third-harmonic generation as well as the performances of entangled photon-pair quantum sources that are based upon spontaneous parametric down conversion and sponta-neous four-wave mixing.The results indicate that the(GaP)N/(Si 2)M short-period superlattice is competitive with present technologies and is practical for classical and quantum applications.