A novel patterned-SOI LDMOSFET with a silicon window beneath the p-type channel was designed and fabricated for RF power amplifier applications. This novel device has good DC and RF characteristics. It has no kink eff...A novel patterned-SOI LDMOSFET with a silicon window beneath the p-type channel was designed and fabricated for RF power amplifier applications. This novel device has good DC and RF characteristics. It has no kink effect on output performance,an off-state breakdown of up to 13V,and fT = 6GHz at DC bias of Vg = Vd = 3.6V.At 1.5GHz,a power-added efficiency （PAE） of 50% is achieved with an output power of up to 27dBm from this device.展开更多
To improve the total-dose radiation hardness,silicon-on-insulator （SOI） wafers fabricated by the separation-by-implanted-oxygen （SIMOX） method are modified by Si ion implantation into the buried oxide with a post ...To improve the total-dose radiation hardness,silicon-on-insulator （SOI） wafers fabricated by the separation-by-implanted-oxygen （SIMOX） method are modified by Si ion implantation into the buried oxide with a post anneal. The ID- VG characteristics can be tested with the pseudo-MOSFET method before and after radiation. The results show that a proper Si-ion-implantation method can enhance the total-dose radiation tolerance of the materials.展开更多
This paper presents the total dose radiation performance of 0.8μm SOI CMOS devices fabricated with full dose SIMOX technology. The radiation performance is characterized by threshold voltage shifts and leakage curren...This paper presents the total dose radiation performance of 0.8μm SOI CMOS devices fabricated with full dose SIMOX technology. The radiation performance is characterized by threshold voltage shifts and leakage currents of transistors and standby currents of ASIC as functions of the total dose up to 500krad（Si）. The experimental results show that the worst case threshold voltage shifts of front channels are less than 320mV for pMOS transistors under off-gate radiation bias at 1Mrad（Si） and less than 120mV for nMOS transistors under on-gate radiation bias. No significant radiation-induced leakage current is observed in transistors to 1Mrad （Si）. The standby currents of ASIC are less than the specification of 5μA over the total dose range of 500krad（Si）.展开更多
文摘A novel patterned-SOI LDMOSFET with a silicon window beneath the p-type channel was designed and fabricated for RF power amplifier applications. This novel device has good DC and RF characteristics. It has no kink effect on output performance,an off-state breakdown of up to 13V,and fT = 6GHz at DC bias of Vg = Vd = 3.6V.At 1.5GHz,a power-added efficiency （PAE） of 50% is achieved with an output power of up to 27dBm from this device.
文摘To improve the total-dose radiation hardness,silicon-on-insulator （SOI） wafers fabricated by the separation-by-implanted-oxygen （SIMOX） method are modified by Si ion implantation into the buried oxide with a post anneal. The ID- VG characteristics can be tested with the pseudo-MOSFET method before and after radiation. The results show that a proper Si-ion-implantation method can enhance the total-dose radiation tolerance of the materials.
文摘This paper presents the total dose radiation performance of 0.8μm SOI CMOS devices fabricated with full dose SIMOX technology. The radiation performance is characterized by threshold voltage shifts and leakage currents of transistors and standby currents of ASIC as functions of the total dose up to 500krad（Si）. The experimental results show that the worst case threshold voltage shifts of front channels are less than 320mV for pMOS transistors under off-gate radiation bias at 1Mrad（Si） and less than 120mV for nMOS transistors under on-gate radiation bias. No significant radiation-induced leakage current is observed in transistors to 1Mrad （Si）. The standby currents of ASIC are less than the specification of 5μA over the total dose range of 500krad（Si）.
