提出了一种新结构薄膜 SOI L IGBT——漂移区减薄的多沟道薄膜 SOI LIGBT( DRT-MC TFSOI L IGB)。主要研究了其低压截止态泄漏电流在 4 2 3～ 573K范围的温度特性。指出 ,通过合理的设计可以使该种新器件具有很低的截止态高温泄漏电流 ...提出了一种新结构薄膜 SOI L IGBT——漂移区减薄的多沟道薄膜 SOI LIGBT( DRT-MC TFSOI L IGB)。主要研究了其低压截止态泄漏电流在 4 2 3～ 573K范围的温度特性。指出 ,通过合理的设计可以使该种新器件具有很低的截止态高温泄漏电流 ,很高的截止态击穿电压 ,足够大的正向导通电流和足够低的正向导通压降。还指出 ,它不仅适用于高温低压应用 ,而且适用于高温高压应用。展开更多
A new SOILIGBT(lateral insulated-gate bipolar transistor) with cathode-and anode-gates on partial membrane is proposed.A low on-state resistance is achieved when a negative voltage is applied to the anode gate.In the ...A new SOILIGBT(lateral insulated-gate bipolar transistor) with cathode-and anode-gates on partial membrane is proposed.A low on-state resistance is achieved when a negative voltage is applied to the anode gate.In the blocking state,the cathode gate is shortened to the cathode and the anode gate is shortened to the anode,leading to a fast switching speed.Moreover,the removal of the partial silicon substrate under the drift region avoids collecting charges beneath the buried oxide,which releases potential lines below the membrane,yielding an enhanced breakdown voltage(BV).Furthermore,a high switching speed is obtained due to the absence of the drain-substrate capacitance. Lastly,a combination of uniformity and variation in lateral doping profiles helps to achieve a high BV and low special on-resistance.Compared with a conventional LIGBT,the proposed structure exhibits high current capability,low special on-resistance,and double the BV.展开更多
A thick SOI LIGBT structure with a combination of uniform and variation in lateral doping profiles （UVLD） on partial membrane（UVLD PM LIGBT） is proposed.The silicon substrate under the drift region is selectively ...A thick SOI LIGBT structure with a combination of uniform and variation in lateral doping profiles （UVLD） on partial membrane（UVLD PM LIGBT） is proposed.The silicon substrate under the drift region is selectively etched to remove the charge beneath the buried oxide so that the potential lines can release below the membrane,resulting in an enhanced breakdown voltage.Moreover,the thick SOI LIGBT with the advantage of a large current flowing and a thermal diffusing area achieves a strong current carrying capability and a low junction temperature.The current carrying capability(KAnode = 6 V,VGate = 15 V) increases by 16%and the maximal junction temperature（1 mW/μm） decreases by 30 K in comparison with that of a conventional thin SOI structure.展开更多
基金The National Natural Science Foundation of China(No.61204083)the Natural Science Foundation of Jiangsu Province(No.BK2011059)the Program for New Century Excellent Talents in University(No.NCET-10-0331)
文摘提出了一种新结构薄膜 SOI L IGBT——漂移区减薄的多沟道薄膜 SOI LIGBT( DRT-MC TFSOI L IGB)。主要研究了其低压截止态泄漏电流在 4 2 3～ 573K范围的温度特性。指出 ,通过合理的设计可以使该种新器件具有很低的截止态高温泄漏电流 ,很高的截止态击穿电压 ,足够大的正向导通电流和足够低的正向导通压降。还指出 ,它不仅适用于高温低压应用 ,而且适用于高温高压应用。
基金supported by the National Natural Science Foundation of China(Nos.60806025,60976060)the Youth Teacher Foundation of University of Electronic Science and Technology of China(No.jx0721)
文摘A new SOILIGBT(lateral insulated-gate bipolar transistor) with cathode-and anode-gates on partial membrane is proposed.A low on-state resistance is achieved when a negative voltage is applied to the anode gate.In the blocking state,the cathode gate is shortened to the cathode and the anode gate is shortened to the anode,leading to a fast switching speed.Moreover,the removal of the partial silicon substrate under the drift region avoids collecting charges beneath the buried oxide,which releases potential lines below the membrane,yielding an enhanced breakdown voltage(BV).Furthermore,a high switching speed is obtained due to the absence of the drain-substrate capacitance. Lastly,a combination of uniformity and variation in lateral doping profiles helps to achieve a high BV and low special on-resistance.Compared with a conventional LIGBT,the proposed structure exhibits high current capability,low special on-resistance,and double the BV.
基金Project supported by the National Natural Science Foundation of China(No.60906038)the Science-Technology Foundation for Young Scientist of University of Electronic Science and Technology of China(No.L08010301JX0831)
文摘A thick SOI LIGBT structure with a combination of uniform and variation in lateral doping profiles （UVLD） on partial membrane（UVLD PM LIGBT） is proposed.The silicon substrate under the drift region is selectively etched to remove the charge beneath the buried oxide so that the potential lines can release below the membrane,resulting in an enhanced breakdown voltage.Moreover,the thick SOI LIGBT with the advantage of a large current flowing and a thermal diffusing area achieves a strong current carrying capability and a low junction temperature.The current carrying capability(KAnode = 6 V,VGate = 15 V) increases by 16%and the maximal junction temperature（1 mW/μm） decreases by 30 K in comparison with that of a conventional thin SOI structure.
