An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measu...An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measured data without device destruction.The IGBT n - layer conductivity modulated resistor is effectively modeled as a voltage controlled resistor.The proposed model can be used to accurately predict the IGBT output I-V characteristics and low current gain etc.The simulation results are verified by the comparison with measurements and found to be in good agreement with them.The error in average is within 8%,which is better than the results of semi-mathematical models reported previously.展开更多
A novel macro-model of high-voltage DMOS for power ICs is proposed according to the canonical piecewiselinear model technique. The method describes nonlinear characteristics directly as functions of node voltage. We e...A novel macro-model of high-voltage DMOS for power ICs is proposed according to the canonical piecewiselinear model technique. The method describes nonlinear characteristics directly as functions of node voltage. We employ the Powell algorithm, which gives higher accuracy without the convergence problem and with lower analysis time. Finally, a Comparison of simulation results and measurement results in application to power ICs is reported.展开更多
A novel simulation program with an integrated circuit emphasis（SPICE） model developed for trench-gate metal-oxide-semiconductor field-effect transistor（M OSFET）devices is proposed. The drift region resistance was ...A novel simulation program with an integrated circuit emphasis（SPICE） model developed for trench-gate metal-oxide-semiconductor field-effect transistor（M OSFET）devices is proposed. The drift region resistance was modeled according to the physical characteristics and the specific structure of the trench-gate MOSFET device. For the accurate simulation of dynamic characteristics, three important capacitances, gate-to-drain capacitance Cgd, gate-to-source capacitance Cgsand drain-to-source capacitance Cds, were modeled, respectively, in the proposed model. Furthermore,the self-heating effect, temperature effect and breakdown characteristic were taken into account; the self-heating model and breakdown model were built in the proposed model; and the temperature parameters of the model were revised. The proposed model is verified by experimental results, and the errors between measured data and simulation results of the novel model are less than 5%. Therefore, the model can give an accurate description for both the static and dynamic characteristics of the trench-gate MOSFET device.展开更多
For applications requiring low-power,low-voltage and real-time,a novel analog VLSI implementation of continuous Marr wavelet transform based on CMOS log-domain integrator is proposed. Marr wavelet is approximated by a...For applications requiring low-power,low-voltage and real-time,a novel analog VLSI implementation of continuous Marr wavelet transform based on CMOS log-domain integrator is proposed. Marr wavelet is approximated by a parameterized class of function and with Levenbery-Marquardt nonlinear least square method,the optimum parameters of this function are obtained. The circuits of implementating Marr wavelet transform are composed of analog filter whose impulse response is the required wavelet. The filter design is based on IFLF structure with CMOS log-domain integrators as the main building blocks. SPICE simulations indicate an excellent approximations of ideal wavelet.展开更多
文摘An IGBT subcircuit model is proposed and optimized,which is fully SPICE compatible.Based on analytical equations describing the semiconductor device physics,the model parameters are extracted accurately from the measured data without device destruction.The IGBT n - layer conductivity modulated resistor is effectively modeled as a voltage controlled resistor.The proposed model can be used to accurately predict the IGBT output I-V characteristics and low current gain etc.The simulation results are verified by the comparison with measurements and found to be in good agreement with them.The error in average is within 8%,which is better than the results of semi-mathematical models reported previously.
文摘A novel macro-model of high-voltage DMOS for power ICs is proposed according to the canonical piecewiselinear model technique. The method describes nonlinear characteristics directly as functions of node voltage. We employ the Powell algorithm, which gives higher accuracy without the convergence problem and with lower analysis time. Finally, a Comparison of simulation results and measurement results in application to power ICs is reported.
基金The National Natural Science Foundation of China(No.61604038)China Postdoctoral Science Foundation(No.2015M580376)+1 种基金the Natural Science Foundation of Jiangsu Province(No.BK20160691)Jiangsu Postdoctoral Science Foundation(No.1501010A)
文摘A novel simulation program with an integrated circuit emphasis（SPICE） model developed for trench-gate metal-oxide-semiconductor field-effect transistor（M OSFET）devices is proposed. The drift region resistance was modeled according to the physical characteristics and the specific structure of the trench-gate MOSFET device. For the accurate simulation of dynamic characteristics, three important capacitances, gate-to-drain capacitance Cgd, gate-to-source capacitance Cgsand drain-to-source capacitance Cds, were modeled, respectively, in the proposed model. Furthermore,the self-heating effect, temperature effect and breakdown characteristic were taken into account; the self-heating model and breakdown model were built in the proposed model; and the temperature parameters of the model were revised. The proposed model is verified by experimental results, and the errors between measured data and simulation results of the novel model are less than 5%. Therefore, the model can give an accurate description for both the static and dynamic characteristics of the trench-gate MOSFET device.
文摘For applications requiring low-power,low-voltage and real-time,a novel analog VLSI implementation of continuous Marr wavelet transform based on CMOS log-domain integrator is proposed. Marr wavelet is approximated by a parameterized class of function and with Levenbery-Marquardt nonlinear least square method,the optimum parameters of this function are obtained. The circuits of implementating Marr wavelet transform are composed of analog filter whose impulse response is the required wavelet. The filter design is based on IFLF structure with CMOS log-domain integrators as the main building blocks. SPICE simulations indicate an excellent approximations of ideal wavelet.
