Epitaxial growth of SmFeO3/SrRuO3 was achieved on SrTiO3 substrates by the pulsed laser deposition(PLD)method at 973 K under oxygen partial pressure of 12.5 Pa.No Fe2+leakage was detected in our SmFeO3 film.The remane...Epitaxial growth of SmFeO3/SrRuO3 was achieved on SrTiO3 substrates by the pulsed laser deposition(PLD)method at 973 K under oxygen partial pressure of 12.5 Pa.No Fe2+leakage was detected in our SmFeO3 film.The remanent polarization and coercive electric field of the thin film with a higher degree of orientation along(110)were 1.97μC/cm2 and 0.89×104 V/cm at room temperature,respectively.This film showed enhanced canted antiferromagnetism spin ordering compared with its corresponding powder materials.展开更多
High-quality SrRuO3 (SRO) thin films and SrTiO3/SRO bilayer were grown epitaxially on SrTiO3 (STO)(001) substrates by laser molecular beam epitaxy. The results of in situ observation of reflection high-energy electron...High-quality SrRuO3 (SRO) thin films and SrTiO3/SRO bilayer were grown epitaxially on SrTiO3 (STO)(001) substrates by laser molecular beam epitaxy. The results of in situ observation of reflection high-energy electron diffraction and ex situ X-ray diffraction θ -2θ scan indicate that the SRO thin films have good crystallinity. The measurements of atomic force microscopy and scan tunneling microscopy reveal that the surface of the SRO thin film is atomically smooth. The resistivity of the SRO thin film is 300 μΩ·cm at room temperature. Furthermore, the transmission electron microscopy study shows that the interfaces of STO/SRO and SRO/STO are very clear and no interfacial reaction layer was observed. The experimental results show that the SRO thin film is an excellent electrode material for devices based on perovskite oxide materials.展开更多
基金supported by the National Natural Science Foundation of China(90922034,21131002,and 21201075)the Specialized Research Fund for the Doctoral Program of Higher Education(20110061130005)
文摘Epitaxial growth of SmFeO3/SrRuO3 was achieved on SrTiO3 substrates by the pulsed laser deposition(PLD)method at 973 K under oxygen partial pressure of 12.5 Pa.No Fe2+leakage was detected in our SmFeO3 film.The remanent polarization and coercive electric field of the thin film with a higher degree of orientation along(110)were 1.97μC/cm2 and 0.89×104 V/cm at room temperature,respectively.This film showed enhanced canted antiferromagnetism spin ordering compared with its corresponding powder materials.
基金the National Natural Science Foundation of China (Grant No. 10334070)
文摘High-quality SrRuO3 (SRO) thin films and SrTiO3/SRO bilayer were grown epitaxially on SrTiO3 (STO)(001) substrates by laser molecular beam epitaxy. The results of in situ observation of reflection high-energy electron diffraction and ex situ X-ray diffraction θ -2θ scan indicate that the SRO thin films have good crystallinity. The measurements of atomic force microscopy and scan tunneling microscopy reveal that the surface of the SRO thin film is atomically smooth. The resistivity of the SRO thin film is 300 μΩ·cm at room temperature. Furthermore, the transmission electron microscopy study shows that the interfaces of STO/SRO and SRO/STO are very clear and no interfacial reaction layer was observed. The experimental results show that the SRO thin film is an excellent electrode material for devices based on perovskite oxide materials.
