This paper introduces the proposed insertion device(ID)scheme for the Shanghai Synchrotron Radiation Facility Upgrade.Based on this scheme,the influences of the ID radiation on the intra-beam scattering emittance and ...This paper introduces the proposed insertion device(ID)scheme for the Shanghai Synchrotron Radiation Facility Upgrade.Based on this scheme,the influences of the ID radiation on the intra-beam scattering emittance and energy spread were evaluated.Optical distortion caused by the IDs was comprehensively examined and compensated using both local and global corrections.Subsequently,a frequency map analysis method was used to identify potentially dangerous resonance lines.In addition,the dynamic aperture,energy acceptance,and Touschek lifetime were calculated after considering high-order magnetic field errors to ensure that the ID effect did not affect the operation of the storage ring.展开更多
文摘This paper introduces the proposed insertion device(ID)scheme for the Shanghai Synchrotron Radiation Facility Upgrade.Based on this scheme,the influences of the ID radiation on the intra-beam scattering emittance and energy spread were evaluated.Optical distortion caused by the IDs was comprehensively examined and compensated using both local and global corrections.Subsequently,a frequency map analysis method was used to identify potentially dangerous resonance lines.In addition,the dynamic aperture,energy acceptance,and Touschek lifetime were calculated after considering high-order magnetic field errors to ensure that the ID effect did not affect the operation of the storage ring.
