InAs/GaAs submonolayer quantum-dot superluminescent diodes with active multimode interferometer configuration

With a chirped InAs/GaAs SML-QD （quantum dot） structure serving as the active region, the superluminescent diodes emitting at wavelength of around 970nm are fabricated. By using an active multimode interferometer configuration, these devices exhibit high continue-wave output powers from the narrow ridge waveguides. At continue-wave injection current of 800mA, an output power of 18.5mW, and the single Gaussian-like emission spectrum centered at 972nm with a full width at half maximum of 18nm are obtained.

Short-wavelength InAlGaAs/AlGaAs quantum dot superluminescent diodes

This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an InAl- GaAs/AlGaAs quantum dot active region. The emission spectrum of the device is centred at 884 nm with a full width at half maximum of 37 nm and an output power of 18 mW. By incorporating an Al composition into the quan- tum dot active region, short-wavelength superluminescent diode devices can be obtained. An intersection was found for the light power-injection current curves measured from the straight-waveguide facet and the bent-waveguide facet, respectively. The result is attributed to the conjunct effects of the gain and the additional loss of the bent waveguide. A numerical simulation is performed to verify the qualitative explanation. It is shown that bent waveguide loss is an important factor that affects the output power of J-shaped superluminescent diode devices.

Quantum cascade superluminescent light emitters with high power and compact structure

Quantum cascade(QC)superluminescent light emitters(SLEs)have emerged as desirable broadband mid-infrared(MIR)light sources for growing number of applications in areas like medical imaging,gas sensing and national defense.However,it is challenging to obtain a practical high-power device due to the very low efficiency of spontaneous emission in the intersubband transitions in QC structures.Herein a design of^5μm SLEs is demonstrated with a two-phonon resonancebased QC active structure coupled with a compact combinatorial waveguide structure which comprises a short straight part adjacent to a tilted stripe and to a J-shaped waveguide.The as-fabricated SLEs achieve a high output power of 1.8 mW,exhibiting the potential to be integrated into array devices without taking up too much chip space.These results may facilitate the realization of SLE arrays to attain larger output power and pave the pathway towards the practical applications of broadband MIR light sources.

Broadband chirped InAs quantum-dot superluminescent diodes with a small spectral dip of 0.2 dB

We report on the fabrication and characterization of InAs/GaAs chirped multilayer quantum-dot superluminescent diodes(CMQD-SLDs)with and without direct Si doping in QDs.It was found that both the output power and the spectral width of the CMQD-SLDs were significantly enhanced by direct Si doping in the QDs.The output power and spectral width have been increased by approximately 18.3%and 40%,respectively.Moreover,we shortened the cavity length of the doped CMQD-SLD and obtained a spectral width of 106 nm.In addition,the maximum output power and spectral width of the CMQD-SLD doped directly with Si can be further increased to 16.6 mW and 114 nm,respectively,through anti-reflection coating and device packaging.The device exhibited the smallest spectral dip of 0.2 dB when the spectrum was widest.The improved performances of the doped CMQD-SLD can be attributed to the direct doping of Si in the QDs,optimization of device structure and device packaging.

Demonstration of a low‐complexity memory‐polynomial‐aided neural network equalizer for CAP visible‐light communication with superluminescent diode

Visible-light communication(VLC)stands as a promising component of the future communication network by providing high-capacity,low-latency,and high-security wireless communication.Superluminescent diode(SLD)is proposed as a new light emitter in the VLC system due to its properties of droop-free emission,high optical power density,and low speckle-noise.In this paper,we analyze a VLC system based on SLD,demonstrating effective implementation of carrierless amplitude and phase modulation(CAP).We create a low-complexity memory-polynomial-aided neural network(MPANN)to replace the traditional finite impulse response(FIR)post-equalization filters of CAP,leading to significant mitigation of the linear and nonlinear distortion of the VLC channel.The MPANN shows a gain in Q factor of up to 2.7 dB higher than other equalizers,and more than four times lower complexity than a standard deep neural network(DNN),hence,the proposed MPANN opens a pathway for the next generation of robust and efficient neural network equalizers in VLC.We experimentally demonstrate a proof-of-concept 2.95-Gbit/s transmission using MPANN-aided CAP with 16-quadrature amplitude modulation(16-QAM)through a 30-cm channel based on the 442-nm blue SLD emitter.

InAs/GaAs submonolayer quantum dot superluminescent diode emitting around 970 nm

According to the InAs/GaAs submonolayer quantum dot active region, we demonstrate a bent-waveguide superluminescent diode emitting at a wavelength of around 970 nm. At a pulsed injection current of 0.5 A, the device exhibits an output power of 24 mW and an emission spectrum centred at 971 nm with a full width at half maximum of 16 nm.

Stochastic Simulation of Emission Spectra and Classical Photon Statistics of Quantum Dot Superluminescent Diodes

We present a stochastic procedure to investigate the correlation spectra of quantum dot superluminescent diodes. The classical electric field of a diode is formed by a polychromatic superposition of many independent stochastic oscillators. Assuming fields with individual carrier frequencies, Lorentzian linewidths and amplitudes we can form any relevant experimental spectrum using a least square fit. This is illustrated for Gaussian and Lorentzian spectra, Voigt profiles and box shapes. Eventually, the procedure is applied to an experimental spectrum of a quantum dot superluminescent diode which determines the first- and second-order temporal correlation functions of the emission. We find good agreement with the experimental data and a quantized treatment. Thus, a superposition of independent stochastic oscillators represents the first- and second-order correlation properties of broadband light emitted by quantum dot superluminescent diodes.

Optical Rotation Detection for Atomic Spin Precession Using a Superluminescent Diode

A superluminescent diode (SLD) as an alternative of laser is used to detect optical rotation for atomic spin precession. A more uniform Gauss configuration without additional beam shaping and a relatively high power of the SLD have a potential for atomic magnetometers, which is demonstrated in theory and experiments. In addition, the robustness and compactness enable a more practical way for optical rotation detections, especially for applications in magnetoencephalography systems.

Active multi-mode-interferometer broadband superluminescent diodes

We report a new quantum dot superluminescent diode with a new device structure. In this device, a multi- mode-interferometer configuration and a J-bend structure were monolithically integrated. Owing to the multi-mode- interferometer structure, the superluminescent diode exhibits 60% increase in output power and 43% reduction in the differential resistance compared with the uniform waveguide width superluminescent diode fabricated from the same wafer. Our device produces an emission spectrum as wide as 103.7 nm with an output power of 2.5 mW at 600 mA continue-wave injection current. This broadband emission spectrum makes the axial resolution of the optical coherence tomography system employing the superluminescent diode to 6 μm in theory, which is high enough for most tissue imaging.

Estimation of the optical loss in bent-waveguide superluminescent diodes by an analytical method

The optical loss in the bent region is one of the key features for bent-waveguide superluminescent diodes that affects the device performance greatly under some conditions. For the purpose of device fabrication and optimization, it will be helpful if this bend loss can be estimated. In this letter, we have derived an analytical formula which can be used to get the bend-loss coefficient by fitting the P-I curves of the devices. It is proved that the formula is successful in estimating the loss coefficients from the P-I curves simulated from a complicated quantum-dot device model. We expect this method could also be valid in estimating bend losses of actual devices.

High performance 1.3 μm InGaAsN superluminescent diodes

High performance 1.3 μm InGaAsN superluminescent diodes (SLDs) were fabricated with Schottky contact. The structure was grown by metal organic chemical vapor deposition (MOCVD). Output power of 3 mW was obtained in continuous wave (CW) mode at room temperature. The full width at half maximum (FWHM) of the emission spectrum was 30 nm. The devices operated up to 100℃.

Review of fiber superluminescent pulse amplifications

High coherence of the laser is indispensable light sources in modern long or short-distance imaging systems, because the high coherence leads to coherent artifacts such as speckle that corrupt image formation. To deliver low coherence pulses in fiber amplifiers, we utilize the superluminescent pulsed light with broad bandwidth, nonlongitudinal mode structure and chaotic mode phase as the seed source of the cascaded fiber amplifiers. The influence of fiber superluminescent pulse amplification(SPA) on the limitations of the performance is analyzed. A review of our research results for SPA in the fibers are present, including the nonlinear theories of this low coherent light sources, i.e., self-focusing(SF), stimulated Raman scattering(SRS) and self-phase modulation(SPM) effects, and the experiment results of the nanosecond pulses with peak power as high as 4.8 MW and pulse energy as much as 55 mJ. To improve the brightness of SPA light in the future work, we introduce our novel evaluation term and a more reasonable criterion, which is denoted by a new parameter of brightness factor for active large mode area fiber designs. A core-doped active large pitch fiber with a core diameter of 190 μm and a mode-field diameter of 180 μm is designed by this method. The designed fiber allows near diffracted limited beam quality operation, and it can achieve 100 mJ pulse energy and 540 W average power by analyzing the mode coupling effects induced by heat.

A neutron radiation-hardened superluminescent diode

We present a novel superluminescent diode （SLD） with high optical performances for hardened neutron irradiation. The degradation of the light output from the SLDs is caused by a reduction of the minority carrier lifetime resulting from displacement damage after high-energy neutron irradiation. The SLDs with a higher pre- irradiation light output will be less sensitive to radiation. We have selected an InGaAsP/InP multi-quantum well （MQW） as the active region structure for its performance, its high optical gain and minute active region. Graded- index separate-confinement-heterostructure （GRIN-SCH） has been applied for the waveguide structure. A specific absorbing region and anti-reflective coatings have been designed and optimized. Moreover, the radiation test results indicate that the SLD with an InGaAsP/InP MQW structure has better neutron hardening ability than the SLD with DH structures after a 6×10^13-1×10^14 n/cm^2 1 MeV neutron irradiation.

InAlGaN superluminescent diodes fabricated on patterned substrates: an alternative semiconductor broadband emitter

We demonstrate InGaN violet light-emitting superluminescent diodes with large spectral width suitable for applications in optical coherence spectroscopy.This was achieved using the concept of nonlinear indium content profile along the superluminescent diode waveguide.A specially designed 3D substrate surface shape leads to a step-like indium content profile,with the indium concentration in the InGaN/GaN quantum wells ranging approximately between 6% and 10%.Thanks to this approach,we were able to increase the width of the spectrum in processed devices from 2.6 nm(reference diode)to 15.5 nm.

Emission Characteristics of the Side Radiation of Excited of the Layer of Alcohol Solution of Rhodamine 6G with the Round Geometric Shape

The spectral-spatial characteristics of the lateral radiation of a circular-shaped Rhodamine 6G solution layer were investigated. The layer is a part of the laser dye solution, which is in optical contact with the bottom of optical cylindrical cell, the shape of which determines the geometric shape of the exciting layer. Homogeneous excitation of this layer by the second harmonic of the Nd+: YAG (λ = 532 nm) laser is realized. Circular, plane-directed radiation, with a small, vertical, divergence was obtained from the edges of the excited layer. Is investigated experimentally the spectral and spatial characteristics of radiation. Excitation of the layer was performed from the side of the cuvette bottom. It turned out that within the concentrations of the dye in the solution from 0.12 to 0.03 wt%, the following processes are observed: 1) Plane-directed radiation, with a small vertical divergence, uniform in intensity, around the optical cell in the plane of the luminescent layer;2) An increase in the amplitude of radiation pulses with a decrease in the concentration of the dye in the solution;3) Shifting of the maximum of the emission spectrum to the short-wave region, significant narrowing of the radiation spectrum and decrease of the vertical divergence of radiation.

Dual-Wavelength Distributed Feedback Laser for CWDM Based on Non-Identical Quantum Well

Using non-identical quantum wells as the active material, a new distributed-feedback laser is fabricated with period varied Bragg grating. The full width at half maximum of I 15 nm is observed in the amplified spontaneous emission spectrum of this material, which is flatter and wider than that of the identical quantum wells. Two wavelengths of 1.51 μm and 1.53 μm are realized under different work conditions. The side-mode suppression ratios of both wavelengths reach 40 dB. This device can be used as the light source of coarse wavelength division multiplexer communication systems.

Broadband light emitting from multilayer-stacked InAs/GaAs quantum dots

We report the effect of the GaAs spacer layer thickness on the photoluminescence （PL） spectral bandwidth of InAs/GaAs self-assembled quantum dots （QDs）. A PL spectral bandwidth of 158 nm is achieved with a five-layer stack of InAs QDs which has a 11-nm thick GaAs spacer layer. We investigate the optical and the structurM properties of the multilayer-stacked InAs/GaAs QDs with different GaAs spacer layer thicknesses. The results show that the spacer thickness is a key parameter affecting the multi-stacked InAs/GaAs QDs for wide-spectrum emission.