A novel method for sacrificial layer release in MEMS devices fabrication

During the forming process of the free-standing structure or the functional cavity when releasing the high aspect ratio sacrificial layer, such structures tend to stick to the substrate due to capillary force. This paper describes the application of pull-in length conception as design rules to a novel ＇dimpled＇ method in releasing sacrificial layer. Based on the conception of pull-in length in adhering Phenomenon, the fabrication and releasing sacrificial layer methods using micro bumps based on the silicon substrate were presented. According to the thermal isolation performances of one kind of micro electromechanical system device thermal shear stress sensor, the sacrificial layers were validated to be successfully released.

Combining two-photon lithography with laser ablation of sacrificial layers:A route to isolated 3D magnetic nanostructures

Three-dimensional(3D)nanostructured functional materials are important systems allowing new means for intricate control of electromagnetic properties.A key problem is realising a 3D printing methodology on the nanoscale that can yield a range of functional materials.In this article,it is shown that two-photon lithography,when combined with laser ablation of sacrificial layers,can be used to realise such a vision and produce 3D functional nanomaterials of complex geometry.Proof-of-principle is first shown by fabricating planar magnetic nanowires raised above the substrate that exhibit controlled domain wall injection and propagation.Secondly,3D artificial spin-ice(3DASI)structures are fabricated,whose complex switching can be probed using optical magnetometry.We show that by careful analysis of the magneto-optical Kerr effect signal and by comparison with micromagnetic simulations,depth dependent switching information can be obtained from the 3DASI lattice.The work paves the way for new materials,which exploit additional physics provided by non-trivial 3D geometries.

A generalized synthesis method for freestanding multiferroic twodimensional layered supercell oxide films via a sacrificial buffer layer

Multiferroics are an intriguing family of materials due to the simultaneous presence of two ferroic orderings,namely,ferroelectricity and ferromagnetism.They are scientifically and technologically important and have numerous potential applications,such as four-state logic memories and multiferroic tunneling junctions.However,the growth of epitaxial singlephase multiferroic thin films typically requires single crystalline oxide substrates,which hinders their future integration with Sibased devices.In this study,we report a generalized synthesis method that uses the polydimethylsiloxane(PDMS)-assisted wetetching method with an Sr_(3)Al_(2)O_(6)(SAO)sacrificial layer to transfer freestanding single-phase multiferroic Bi_(2)NiMnO_(6)(BNMO)films from conventional SrTiO_(3)(STO)substrates onto a Si wafer.The structures and properties of the films have been characterized before and after the transfer.These transferred films possess good multiferroic properties on Si wafers,indicating full compatibility with modern Si technology.This method can be generally applicable to other Bi-based multiferroic materials as well.Lastly,the original STO substrates after the transfer process have been recycled for preparing new batches of freestanding BNMO films,indicating a low-cost and sustainable method for manufacturing large-volume freestanding complex oxide thin films.

High-resolution, full-color quantum dot light-emitting diode display fabricated via photolithography approach

Displays play an extremely important role in modern information society,which creates a never-ending demand for the new and better products and technologies.The latest requirements for novel display technologies focus on high resolution and high color gamut.Among emerging technologies that include organic light-emitting diode(OL ED),micro light-emiting diode(micro-LED),quantum dot light-emitting diode(QLED),laser display,holographic display and others,QLED is promising owing to its intrinsic high color gamut and the possibility to achieve high resolution with photolithography approach.However,previously demonstrated photolthography techniques suffer from reduced device performance and color Impurities in subpixels from the process.In this study,we demonstrated a sacrificial layer assisted patterming(SLAP)approach,which can be applied in conjunction with photolithography to fabricate high-resolution,full-colo quantum dot(QD)patterns.In this approach,the negative photoresist(PR)and sacrificial layer(SL)were uilized to determine the pixels for QD deposition,while at the same time the SL helps protect the QD layer and keep it intact(named PR-SL approach).To prove this method's viability for QLED display manufacture,a 500-ppi,full-color passive matrix(PM)-QLED prototype was fabricated via this process.Results show that there were no color impurities in the subpixels,and the PM-QL ED has a high color gamut of 114%National Television Standards Committee(NTSC).To the best of our knowledge,this is the first ull-olor QLED prototype with such a high resolution.We anticipate that this innovative patteming technique will open a new horizon for future display technologies and may lead to a disruptive and innovative change in display industry.

Photomechanical meta-molecule array for real-time terahertz imaging

Real-time terahertz(THz)imaging offers remarkable application possibilities,especially in the security and medical fields.However,most THz detectors work with scanners,and a long image acquisition time is required.Some thermal detectors can achieve realtime imaging by using a focal plane array but have the drawbacks of low sensitivity due to a lack of suitable absorbing materials.In this study,we propose a novel photomechanical meta-molecule array by conveniently assembling THz meta-atom absorbers and bi-material cantilevers together,which can couple THz radiation to a mechanical deflection of the meta-molecules with high efficiency.By optically reading out the mechanical deflections of all of the meta-molecules simultaneously,real-time THz imaging can be achieved.A polyimide sacrificial layer technique was developed to fabricate the device on a glass wafer,which facilitates the transmission of a readout light while the THz wave radiates onto the meta-molecule array directly from the front side.THz images and video of various objects as well as infrared images of the human body were captured successfully with the fabricated metamolecule array.The proposed photomechanical device holds promise in applications in single and broadband THz as well as infrared imaging.

High-yield fabrication of perpendicularly magnetised synthetic antiferromagnetic nanodiscs

Synthetic antiferromagnetic (SAF) particles with perpendicular anisotropy display a number of desirable characteristics for applications in biological and other fluid environments. We present an efficient and effective method for the patterning of ultrathin Ruderman-Kittel-Kasuya-Yoshida coupled, perpendicularly magnetised SAFs using a combination of nanosphere lithography and ion milling. A Ge sacrificial layer is utilised, which provides a clean and simple lift-off process, as well as maintaining the key magnetic properties that are beneficial to target applications. We demonstrate that the method is capable of producing a particularly high yield of well-defined, thin film based nanoparticles.

A new fabrication process for the SOI-based miniature electric field sensor

This paper presents a new fabrication process for the SOI-based novel miniature electric field sensor. This new process uses polyimide film to release the SiO_2 layer.Compared with the CO_2 critical point release method,it significantly improves the device surface cleanliness and shortens the process flow.The impurity on the base layer is analyzed.The problem of peak and butterfly-type contamination occurring on the base layer of the SOI wafer during the DRIE process is discussed and solved by thickening the photoresist layer and coating with polyimide film twice.This new process could fabricate MEMS sensors and actuators such as SOI-based electric field sensors,gyroscopes,and micro mirrors and can be an alternative fabrication process compared to commercial SOIMUMPS fabrication processes.

基于可牺牲中间层制备大规模、可控双金属氢氧化物膜的协同策略

层状双金属氢氧化物(LDHs)作为一种类水滑石薄膜,以其优异的特性在许多领域中具有广泛的应用.然而,现有的LDH膜制备路线具有大规模生长受限和不可控等问题.本文中,我们受一种草本植物“落地生根”(Bryophyllum Pinnatum)具有肆意生长特性的启发,首次引入可牺牲的共溅射锌-铝中间层作为“植物种子”,通过“局部溶解”和“溶液渗透”的结构转化机制在任意形状、大小及材质的基底材料上实现大规模、厚度可控的LDH膜制备.通过调控中间膜的成分、结构和表面形貌,设计具有不同特性的LDH转化膜.实验结果表明,所制备的LDH膜具有较大的厚度和多级微观结构的特性,在严苛的磨损条件下仍能实现良好的机械稳定性.另外,我们设计了一系列基于锌-铝单金属中间层的电偶模拟实验对LDH膜的化学转化机理进行了深入探究,解决了传统复杂水热过程中实时监测困难的问题.本工作不仅开发了一种制备具有多尺度特性的LDH转化膜的新策略,同时揭示了复杂的LDH原位转化机理,为拓宽LDH材料在先进智能材料上的实际应用提供了新的发展思路.