Based on Al induced crystallization (AIC) method, influences of different material structures on formation and characteristics of ploy-silicon thin films were studied and optimized. Al-Si films on glass with different...Based on Al induced crystallization (AIC) method, influences of different material structures on formation and characteristics of ploy-silicon thin films were studied and optimized. Al-Si films on glass with different structures (Si/Al/Glass, Al/Si/Glass, Si/Al/.../Si/Al/Glass) were deposited on glass substrates by sputtering method. All samples were annealed for MIC with varied time processes under 500°C N<SUB>2</SUB> environment. X-ray diffraction test and scanning electron microscope were adopted to characterize crystallization performance and surface topography of AIC poly-silicon samples after removing residual aluminum. The electrical properties were also characterized by Hall test method. Quick process and high performance of AIC ploy-silicon thin film can be both obtained by use of periodic structure samples.展开更多
文摘Based on Al induced crystallization (AIC) method, influences of different material structures on formation and characteristics of ploy-silicon thin films were studied and optimized. Al-Si films on glass with different structures (Si/Al/Glass, Al/Si/Glass, Si/Al/.../Si/Al/Glass) were deposited on glass substrates by sputtering method. All samples were annealed for MIC with varied time processes under 500°C N<SUB>2</SUB> environment. X-ray diffraction test and scanning electron microscope were adopted to characterize crystallization performance and surface topography of AIC poly-silicon samples after removing residual aluminum. The electrical properties were also characterized by Hall test method. Quick process and high performance of AIC ploy-silicon thin film can be both obtained by use of periodic structure samples.
