Saturation Ion Current Densities in Inductively Coupled Hydrogen Plasma Produced by Large-Power Radio Frequency Generator

An experimental investigation of the saturation ion current densities （Jions） in hydrogen inductively coupled plasma （ICP） produced by a large-power （2-32 kW） radio frequency （RF） generator is reported, then some reasonable explanations are given out. With the increase of RF power, the experimental results show three stages： in the first stage （2-14 kW）, the electron temperature will rise with the increase of RF power in the ICP, thus, the Jions increases continually as the electron temperature rises in the ICP. In the second stage （14 20 kW）, as some H- ions lead to the mutual neutralization （MN）, the slope of Jio^s variation firstly decreases then increases. In the third stage （20-32 kW）, both the electronic detachment （ED） and the associative detachment （AD） in the ICP result in the destruction of H- ions, therefore, the increased amplitude of the Jions in the third stage is weaker than the one in the first stage. In addition, with the equivalent transformer model, we successfully Explain that the Jions at different radial locations in ICP has the same rule. Finally, it is found that the Jions has nothing to do with the outer/inner puffing gas pressure ratio, which is attributed to the high-speed movement of hydrogen molecules.

Boron implanted emitter for n-type silicon solar cell

The effects of ion doses on the properties of boron implanted Si for n-type solar cell application were investigated with doses ranging from 5×10^14cm^-2 to 2×10^15cm^-2 and a subsequent two-step annealing process in a tube furnace.With the help of the TCAD process simulation tool, knowledge on diffusion kinetics of dopants and damage evolution was obtained by fitting SIMS measured boron profiles. Due to insufficient elimination of the residual damage, the implanted emitter was found to have a higher saturation current density（J0e） and a poorer crystallographic quality. Consistent with this observation, V oc, J sc, and the efficiency of the all-implanted p^＋–n–n^＋solar cells followed a decreasing trend with an increase of the implantation dose. The obtained maximum efficiency was 19.59% at a low dose of 5×10^14cm^-2. The main efficiency loss under high doses came not only from increased recombination of carriers in the space charge region revealed by double-diode parameters of dark I–V curves, but also from the degraded minority carrier diffusion length in the emitter and base evidenced by IQE data. These experimental results indicated that clusters and dislocation loops had appeared at high implantation doses, which acted as effective recombination centers for photogenerated carriers.