First-Principle Calculation of the Electronic Structure of Sb-Doped SrTiO_3

The electronic structure,including band structure,density of states （DOS）, and partial density of states of SrTi1-xSbxO3 with x = 0,0. 125,0.25,and 0.33 is calculated from the first principles of plane wave ultra-soft pseudo-potential technology based on density function theory. The calculated results reveal that due to the electron doping,the Fermi level moves into the conduction bands for SrTi1-xSbxO3 with x = 0. 125 and the system shows metallic behavior. In addition, the DOS moves towards low energy and the optical band gap is broadened. The wide band gap and the low density of the states in the conduction band result in the transparency of the films.

Effect of Rapid Thermal Process on Oxygen Precipitates in Heavily Sb-Doped Silicon Wafer

Oxygen precipitates in heavily Sb-doped silicon after rapid thermal process (RTP) in Ar ambient were investigated by RTP at high temperature following annealing at 800 ℃ for 4 h and 1000 ℃ for 16 h. RTP temperature and cooling rates were changed from 1200 to 1260 ℃ and from 10 to 100 ℃·s-1, respectively. The experiment results show that high density of oxygen precipitates is observed in heavily Sb-doped wafer. It is found that the oxygen precipitates in heavily Sb-doped silicon are enhanced at high cooling rate.

Electrical and optical properties of Sb-doped ZnO thin films synthesized by sol–gel method

Sb-doped ZnO thin films with different values of Sb content （from 0 to 1.1 at.%） are deposited by the sol-gel dip- coating method under different sol concentrations. The effects of Sb-doping content, sol concentration, and annealing ambient on the structural, optical, and electrical properties of ZnO films are investigated. The results of the X-ray diffraction and ultraviolet-visible spectroscopy （UV-VIS） spectrophotometer indicate that each of all the films retains the wurtzite ZnO structure and possesses a preferred orientation along the c axis, with high transmittance （〉 90%） in the visible range. The Hall effect measurements show that the vacuum annealed thin films synthesized in the sol concentration of 0.75 mol/L each have an adjustable n-type electrical conductivity by varying Sb-doping density, and the photoluminescence （PL） spectra revealed that the defect emission （around 450 nm） is predominant. However, the thin films prepared by the sol with a concentration of 0.25 mol/L, despite their poor conductivity, have priority in ultraviolet emission, and the PL peak position shows first a blue-shift and then a red-shift with the increase of the Sb doping content.

Optical and electrical properties of Sb-doped β-Ga_(2)O_(3) crystals grown by OFZ method

Sb-doped β-Ga_(2)O_(3) crystals were grown using the optical floating zone(OFZ) method.X-ray diffraction data and X-ray rocking curves were obtained,and the results revealed that the Sb-doped single crystals were of high quality.Raman spectra revealed that Sb substituted Ga mainly in the octahedral lattice.The carrier concentration of the Sb-doped single crystals increased from 9.55 × 10^(16) to 8.10 × 10^(18) cm^(-3),the electronic mobility depicted a decreasing trend from 153.1 to108.7 cm~2·V^(-1)·s^(-1),and the electrical resistivity varied from 0.603 to 0.017 Ω·cm with the increasing Sb doping concentration.The un-doped and Sb-doped β-Ga_(2)O_(3) crystals exhibited good light transmittance in the visible region;however,the evident decrease in the infrared region was caused by increase in the carrier concentration.The Sb-doped β-Ga_(2)O_(3) single crystals had high transmittance in the UV region as well,and the cutoff edge appeared at 258 nm.

Effect of calcining temperature and time on the characteristics of Sb-doped SnO_2 nanoparticles synthesized by the sol-gel method

Spherical Sb-doped SnO2 （ATO） nanoparticles were synthesized by the sol-gel route, employing SnCl4.5H2O and SbCl3 as precursors in an ethanol solution. The influences of the calcining temperature and calcining time on the crystallite size, crystallinity, lattice parameters, lattice distortion ratio and the resistivity of the ATO nanoparticles were synthetically investigated. The results suggested that the ATO nanoparticles were crystallized in a tetragonal cassiterite structure of SnO2 with a highly （110）- plane-preferred orientation. The calcining temperature had a dominating effect on the crystallite size, crystallinity, lattice distortion ratios and resistivity of the ATO. As the calcining temperature increased, the average crystallite size increased, the crystallinity was promoted accompanied by a decrease in the lattice distortion ratio and a corresponding decrease in the resistivity of the ATO. X-ray diffraction （XRD） and Fourier transform infrared spectrophotometer （FTIR） analysis revealed that Sb ions could not entirely supplant the Sn ions in the SnO2 lattice for a calcining time of less than 0.5 h, even at a calcining temperature of 1000 ℃. The ATO nanoparticles calcined at 1000 ℃ for 3,0 h possessed the lowest resistivity of 10.18 Ωcm.

Gain Flattening Filter for Hybrid Sb-Doped EDFA Using All-Fiber Mach-Zehnder Interferometers

We demonstrate a novel gain-flattening filter based on all fiber Mach-Zehnder interferometers for Sb-doped silica hybrid EDFA. A gain flatness of better than 0.9dB has been achieved for three concatenated filters in C-band.

Effect of Sn precursor on the synthesis of SnO2 and Sb-doped SnO2 particles via polymeric precursor method

SnO2 and Sb-doped SnO2 particles were synthesized using the polymeric precursor method with different Sn salt precursors： SnCl2.2H2O, SnCl4.5H20, or Sn citrate. Sb2O3 was used as the precursor of Sb, and the molar ratio of nsn：nsb was held constant. FTIR and TGA/DTA were used to examine the influence of the Sn precursor on the formation and thermal decomposition of the Sn and Sn-Sb complexes. The calcination products obtained from heating the Sn and Sn-Sb complexes at 500℃ in air were analyzed using XRD and TEM analysis. The results revealed that the SnO2 and Sb-doped SnO2 formation temperatures depended on the nature of the Sn precursor. The calcination products were found to be SnO2 and Sb-doped SnO2 particles, which crystallized in a tetragonal cassiterite structure with a highly preferred （110） planar orientation. The Sn precursor and the presence of Sb in the SnO2 matrix strongly influenced the crystallinity and lattice parameters.

Microrod structure and properties of Sb-doped Ti/SnO_2 anodes prepared by magnetron sputtering

Cyclic voltammetry and chronopotentiometry have been used to study the Sb-doped Ti/SnO2 anodes prepared by magnetron sputtering. The results showed that magnetron sputtering condition influenced the surface morphology and the properties of the anodes. After the Ti substrate was tempered in Ar at 600 ℃ for 1 h, Till1.5 on the surface generated from the acid etching was replaced by needle-like TiO2. The SnO2 coating on the above Ti substrate by magnetron sputtering with post-annealing was comprised of microrod and different with the traditional Ti/ SnO2 anode. The accelerated service life test showed that the microrod SnO2 anode gained the longest service time. The anode exhibited oscillations in the chronopotentiometry curves, and the microrod SnO2 coating almost dissolved after the life test. A model of layer-by-layer degradation mechanism for the anode was proposed.

Electronic Structure and Optical Properties of Antimony-Doped SnO_2 from First-Principle Study

A first-principles study has been performed to calculate the electronic and optical properties of the SbxSn1xO system.The simulations are based upon the method of generalized gradient approximations with the Perdew-Burke-Ernzerhof form in the framework of density functional theory.The supercell structure shows a trend from expanding to shrinking with the increasing Sb concentration.The increasing Sb concentration induces the band gap narrowing.Optical transition has shifted to the low energy range with increasing Sb concentration.Other important optical constants such as the dielectric function,reflectivity,refractive index,and electron energy loss function for Sb-doped SnO2 are discussed.The optical absorption edge of SnO2 doped with Sb also shows a redshift.

Effect of Growth Parameters on Core Length of Φ76．2mm Heavily Sb－doped Si Crystals

An M-shaped interface was observed in the top part of Φ76. 2 mm , (111) , dislocation-free, heavily Sb-doped Si single crystals, which is beneficial for crystals to keep dislocation-free condition at the beginning ofbody growth. Effects of seed rotation, crucible rotation , crown shape and growth rate on M-shaed interfacewere studied. Under proper conditions, impurity core length can be shortened from 6 cm to 1 cm , the yield israised by more than 5 %.

Lead-Free Hybrid Indium Perovskites with Highly Efficient and Stable Green Light Emissions

Lead halide perovskite nanocrystals(PNCs)have emerged as new-generation light-emitting materials with important potentials in optoelectronic applications.However,the toxicity of lead metal and the instabilities of PNCs overwhelmingly hinder their device engineering;thus,it is still urgent to construct new single crystalline lead-free perovskites with high-performance luminescent properties.