An in-depth understanding of the photoconductivity and photocarrier density at the interface is of great significance for improving the performance of optoelectronic devices. However, extraction of the photoconductivi...An in-depth understanding of the photoconductivity and photocarrier density at the interface is of great significance for improving the performance of optoelectronic devices. However, extraction of the photoconductivity and photocarrier density at the heterojunction interface remains elusive. Herein, we have obtained the photoconductivity and photocarrier density of 173 nm Sb2Se3/Si(type-Ⅰ heterojunction) and 90 nm Sb2Se3/Si(type-Ⅱ heterojunction) utilizing terahertz(THz) time-domain spectroscopy(THz-TDS) and a theoretical Drude model. Since type-Ⅰ heterojunctions accelerate carrier recombination and type-Ⅱ heterojunctions accelerate carrier separation, the photoconductivity and photocarrier density of the type-Ⅱ heterojunction(21.8×10^(4)S·m^(-1),1.5 × 10^(15)cm^(-3)) are higher than those of the type-Ⅰ heterojunction(11.8×10^(4)S·m^(-1),0.8×10^(15)cm^(-3)). These results demonstrate that a type-Ⅱ heterojunction is superior to a type-Ⅰ heterojunction for THz wave modulation. This work highlights THz-TDS as an effective tool for studying photoconductivity and photocarrier density at the heterojunction interface. In turn, the intriguing interfacial photoconductivity effect provides a way to improve the THz wave modulation performance.展开更多
采用机械合金化方法制备Mg_3Sb_2金属间化合物,研究了摩尔比为3:2的Mg、Sb混合粉末的机械合金化过程,通过改变球磨转速和球料比找到制备Mg_3Sb_2的最佳工艺参数,对球磨后的粉末进行了X射线衍射(XRD)、差示扫描量热法(DSC)、扫描电镜(SEM...采用机械合金化方法制备Mg_3Sb_2金属间化合物,研究了摩尔比为3:2的Mg、Sb混合粉末的机械合金化过程,通过改变球磨转速和球料比找到制备Mg_3Sb_2的最佳工艺参数,对球磨后的粉末进行了X射线衍射(XRD)、差示扫描量热法(DSC)、扫描电镜(SEM)测试分析。结果表明,机械合金化方法可制备出细小的Mg_3Sb_2粉末,最佳球磨工艺参数是500 r/min的球磨转速、15:1的球料比。由热力学计算可知,Mg-Sb二元合成反应的绝热温度Tad=2149.5 K。DSC分析知,随球磨时间的延长,燃烧反应的临界温度会下降。经Kissinger公式计算原始混合粉末的激活能为94.45 k J/mol,球磨2 h之后的激活能为82.23 k J/mol,说明球磨使粉末内部产生大量晶体缺陷和位错等,体系能量增加,反应激活能降低,从而促进合金化的进程。展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos. 12261141662, 12074311, and 12004310)。
文摘An in-depth understanding of the photoconductivity and photocarrier density at the interface is of great significance for improving the performance of optoelectronic devices. However, extraction of the photoconductivity and photocarrier density at the heterojunction interface remains elusive. Herein, we have obtained the photoconductivity and photocarrier density of 173 nm Sb2Se3/Si(type-Ⅰ heterojunction) and 90 nm Sb2Se3/Si(type-Ⅱ heterojunction) utilizing terahertz(THz) time-domain spectroscopy(THz-TDS) and a theoretical Drude model. Since type-Ⅰ heterojunctions accelerate carrier recombination and type-Ⅱ heterojunctions accelerate carrier separation, the photoconductivity and photocarrier density of the type-Ⅱ heterojunction(21.8×10^(4)S·m^(-1),1.5 × 10^(15)cm^(-3)) are higher than those of the type-Ⅰ heterojunction(11.8×10^(4)S·m^(-1),0.8×10^(15)cm^(-3)). These results demonstrate that a type-Ⅱ heterojunction is superior to a type-Ⅰ heterojunction for THz wave modulation. This work highlights THz-TDS as an effective tool for studying photoconductivity and photocarrier density at the heterojunction interface. In turn, the intriguing interfacial photoconductivity effect provides a way to improve the THz wave modulation performance.
文摘采用机械合金化方法制备Mg_3Sb_2金属间化合物,研究了摩尔比为3:2的Mg、Sb混合粉末的机械合金化过程,通过改变球磨转速和球料比找到制备Mg_3Sb_2的最佳工艺参数,对球磨后的粉末进行了X射线衍射(XRD)、差示扫描量热法(DSC)、扫描电镜(SEM)测试分析。结果表明,机械合金化方法可制备出细小的Mg_3Sb_2粉末,最佳球磨工艺参数是500 r/min的球磨转速、15:1的球料比。由热力学计算可知,Mg-Sb二元合成反应的绝热温度Tad=2149.5 K。DSC分析知,随球磨时间的延长,燃烧反应的临界温度会下降。经Kissinger公式计算原始混合粉末的激活能为94.45 k J/mol,球磨2 h之后的激活能为82.23 k J/mol,说明球磨使粉末内部产生大量晶体缺陷和位错等,体系能量增加,反应激活能降低,从而促进合金化的进程。
