Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle...Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle-dependent HDPC,it is found that the HDPC is mainly contributed by the circular photogalvanic effect(CPGE)current when the incident plane is perpendicular to the connection of the two contacts,whereas the circular photon drag effect(CPDE)dominates the HDPC when the incident plane is parallel to the connection of the two contacts.In addition,the CPGE of the(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate is regulated by temperature,light power,excitation wavelength,the source–drain and ionic liquid top-gate voltages,and the regulation mechanisms are discussed.It is demonstrated that(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplates may provide a good platform for novel opto-spintronics devices.展开更多
Focusing on the low open circuit voltage(V_(OC))and fill factor(FF)in flexible Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells,indium(In)ions are introduced into the CZTSSe absorbers near Mo foils to modify the back interface...Focusing on the low open circuit voltage(V_(OC))and fill factor(FF)in flexible Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells,indium(In)ions are introduced into the CZTSSe absorbers near Mo foils to modify the back interface and passivate deep level defects in CZTSSe bulk concurrently for improving the performance of flexible device.The results show that In doping effectively inhibits the formation of secondary phase(Cu(S,Se)_(2))and VSndefects.Further studies demonstrate that the barrier height at the back interface is decreased and the deep level defects(Cu_(Sn)defects)in CZTSSe bulk are passivated.Moreover,the carrier concentration is increased and the V_(OC) deficit(V_(OC,def))is decreased significantly due to In doping.Finally,the flexible CZTSSe solar cell with 10.01%power conversion efficiency(PCE)has been obtained.The synergistic strategy of interface modification and bulk defects passivation through In incorporation provides a new thought for the fabrication of efficient flexible kesterite-based solar cells.展开更多
Antimony sulfide–selenide Sb2（S,Se）3,including Sb2S3and Sb2Se3,can be regarded as binary metal chalcogenides semiconductors since Sb2S3and Sb2Se3are isomorphous.They possess abundant elemental storage,nontoxicity,g...Antimony sulfide–selenide Sb2（S,Se）3,including Sb2S3and Sb2Se3,can be regarded as binary metal chalcogenides semiconductors since Sb2S3and Sb2Se3are isomorphous.They possess abundant elemental storage,nontoxicity,good stability with regard to moisture at elevated temperatures and suitable physical parameters for light absorption materials in solar cells.To date,quite a few attempts have been conducted in the materials synthesis,photovoltaic property investigation and device fabrication.Benefiting from previous investigation in thin film solar cells and new generation nanostructured solar cells,this class of materials has been applied in either sensitized-architecture or planar heterojunction solar cells.Decent power conversion efficiencies from 5%to 7.5%have been achieved.Apparently,further improvement on the efficiency is required for future practical applications.To give an overview of this research field,this paper displays some typical researches regarding the methodologies toward the antimony sulfide–selenide synthesis,development of interfacial materials and device fabrications,during which we highlight some critical findings that promote the efficiency enhancement.Finally,this paper proposes some outstanding issue regarding fundamental understanding of the materials,some viewpoints for the efficiency improvement and their future challenges in solar cell applications.展开更多
The band alignment at the front interfaces is crucial for the performance of Sb_(2)Se_(3) solar cell with superstrate configuration.Herein,a Sn O_(2)/Ti O_(2) thin film,demonstrated beneficial for carrier transport in...The band alignment at the front interfaces is crucial for the performance of Sb_(2)Se_(3) solar cell with superstrate configuration.Herein,a Sn O_(2)/Ti O_(2) thin film,demonstrated beneficial for carrier transport in Sb_(2)Se_(3) device by the first-principle calculation and experiment,is proposed to reduce the parasitic absorption caused by CdS and optimize the band alignment of Sb_(2)Se_(3) solar cell.Thanks to the desirable transmittance of SnO_(2)/TiO_(2) layer,the Sb_(2)Se_(3) solar cell with SnO_(2)/TiO_(2)/(CdS-38 nm) electron transport layer performances better than (CdS-70 nm)/Sb_(2)Se_(3) solar cell.The optimized band alignment,the reduced interface defects and the decreased current leakage of Sb_(2)Se_(3) solar cell enable the short-circuit current density,fill factor,open-circuit voltage and efficiency of the Sb_(2)Se_(3) solar cell increase by 26.7%,112%,33.1%and 250%respectively when comparing with TiO_(2)/Sb_(2)Se_(3) solar cell without modification.Finally,an easily prepared Sn O_(2)/Ti O_(2)/CdS ETL is successfully applied on Sb_(2)Se_(3) solar cell by the first time and contributes to the best efficiency of 7.0%in this work,which is remarkable for Sb_(2)Se_(3) solar cells free of hole transporting materials and toxic CdCl_(2) treatment.This work is expected to provide a valuable reference for future ETL design and band alignment for Sb_(2)Se_(3) solar cell and other optoelectronic devices.展开更多
The environmentally friendly Cu_(2)ZnSn(S,Se)_(4)(CZTSSe) compounds are promising direct bandgap materials for application in thin film solar cells, but the spontaneous surface defects disordering would lead to large ...The environmentally friendly Cu_(2)ZnSn(S,Se)_(4)(CZTSSe) compounds are promising direct bandgap materials for application in thin film solar cells, but the spontaneous surface defects disordering would lead to large open-circuit voltage deficit(V_(oc,deficit)) and significantly limit kesterite photovoltaics performance,primarily arising from the generated more recombination centers and insufficient p to n conversion at p-n junction. Herein, we establish a surface defects ordering structure in CZTSSe system via local substitution of Cu by Ag to suppress disordered Cu_(Zn) defects and generate benign n-type Zn_(Ag) donors. Taking advantage of the decreased annealing temperature of Ag F post deposition treatment(PDT), the high concentration of Ag incorporated into surface absorber facilitates the formation of surface ordered defect environment similar to that of efficient CIGS PV. The manipulation of highly doped surface structure could effectively reduce recombination centers, increase depletion region width and enlarge the band bending near p-n junction. As a result, the Ag F-PDT device finally achieves maximum efficiency of 12.34% with enhanced V_(oc) of 0.496 V. These results offer a new solution route in surface defects and energy-level engineering, and open the way to build up high quality p-n junction for future development of kesterite technology.展开更多
It is very important to understand why a small amount of alkali metal doping in Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells can improve the conversion efficiency.In this work,Na-doped CZTSSe is prepared by a simple soluti...It is very important to understand why a small amount of alkali metal doping in Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells can improve the conversion efficiency.In this work,Na-doped CZTSSe is prepared by a simple solution method,and then the effects on the surface properties of the absorber layer,the buffer layer growth,and the modifications of the solar cell performance induced by the Na doping are studied.The surface of the absorber layer is more Cu-depletion and less roughness due to the Na doping.In addition,the contact angle of the surface increases because of Na doping.As a consequence,the thickness of the CdS buffer layer is significantly reduced and the optical losses in the CdS buffer layer are decreased.The difference of quasi-Fermi levels(EFn-EFp) increases with a small amount of Na doping in the CZTSSe solar cell,so that open circuit voltage(VOC) increased significantly.This work offers new insights into the effects of Na doping on CZTSSe via a solution-based approach and provides a deeper understanding of the origin of the efficiency improvement of Na-doped CZTSSe thin film solar cells.展开更多
Photo-generated carrier recombination loss at the CZTSSe/Cd S front interface is a key issue to the opencircuit voltage(V_(OC)) deficit of Cu_(2)ZnSnS_(x)Se_(4-x)(CZTSSe) solar cells. Here, by the aid of an easy-handl...Photo-generated carrier recombination loss at the CZTSSe/Cd S front interface is a key issue to the opencircuit voltage(V_(OC)) deficit of Cu_(2)ZnSnS_(x)Se_(4-x)(CZTSSe) solar cells. Here, by the aid of an easy-handling spin-coating method, a thin PCBM([6,6]-phenyl-C61-butyric acid methyl ester) layer as an electron extraction layer has been introduced on the top of CdS buffer layer to modify CZTSSe/CdS/ZnO-ITO(In_(2)O_(3):Sn) interfacial properties. Based on Sn^(4+)/DMSO(dimethyl sulfoxide) solution system, a totalarea efficiency of 12.87% with a VOC of 529 m V has been achieved. A comprehensive investigation on the influence of PCBM layer on carrier extraction, transportation and recombination processes has been carried out. It is found that the PCBM layer can smooth over the Cd S film roughness, thus beneficial for a dense and flat window layer. Furthermore, this CZTSSe/Cd S/PCBM heterostructure can accelerate carrier separation and extraction and block holes from the front interface as well, which is mainly ascribed to the downward band bending of the absorber and a widened space charge region. Our work provides a feasible way to improve the front interfacial property and the cell performance of CZTSSe solar cells by the aid of organic interfacial materials.展开更多
Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)has attracted considerable attention as a non-toxic and earthabundant solar cell material.During selenization of CZTSSe film at high temperature,the reaction between CZTSSe and Mo...Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)has attracted considerable attention as a non-toxic and earthabundant solar cell material.During selenization of CZTSSe film at high temperature,the reaction between CZTSSe and Mo is one of the main reasons that result in unfavorable absorber and interface quality,which leads to large open circuit voltage deficit(VOC-def)and low fill factor(FF).Herein,a WO_(3)intermediate layer introduced at the back interface can effectually inhibit the unfavorable interface reaction between absorber and back electrode in the preliminary selenization progress;thus high-quality crystals are obtained.Through this back interface engineering,the traditional problems of phase segregation,voids in the absorber and over thick Mo(S,Se)_(2)at the back interface can be well solved,which greatly lessens the recombination in the bulk and at the interface.The increased minority carrier diffusion length,decreased barrier height at back interface contact and reduced deep acceptor defects give rise to systematic improvement in VOCand FF,finally a 12.66%conversion efficiency for CZTSSe solar cell has been achieved.This work provides a simple way to fabricate highly efficient solar cells and promotes a deeper understanding of the function of intermediate layer at back interface in kesterite-based solar cells.展开更多
Antimony chalcogenide Sb_(2)(S, Se)_(3) is attracting a lot of attention as photovoltaic absorber owing to its rewarding photoelectric properties, low toxicity, and earth abundance. However, its device efficiency is s...Antimony chalcogenide Sb_(2)(S, Se)_(3) is attracting a lot of attention as photovoltaic absorber owing to its rewarding photoelectric properties, low toxicity, and earth abundance. However, its device efficiency is still limited by the absorber material quality and device interface recombination. In this work, a fluorinedoped tin oxide(FTO) substrate with ultra-thin SnO_(2) layer and a low-cost stabilized carbon paste are introduced as a front and back contact layer respectively in Sb_(2)(S, Se)_(3) based planar solar cells. Over 5.2% efficiency is demonstrated in the structure of FTO/SnO_(2)/Cd S/Sb_(2)(S, Se)_3/Carbon/Ag, where the Sb_(2)(S, Se)_(3) is prepared by hydrothermal technique. The complementary device physics characterizations reveal that the interfacial recombination between TCO and Cd S is significantly suppressed by the introduction of ultra-thin SnO_(2) layer, which is profited from the leakage protection and bandgap offset engineering by its high resistivity and suitable conduction band minimum. Meanwhile, the successful adoption of the lowcost stabilized carbon as a back contact here shows an enormous potential to replace the conventional organic hole transport materials and noble metal. We hope this work can provide positive guidance to optimize Sb_(2)(S, Se)_(3) based planar solar cells in the future.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62074036,61674038,and 11574302)the Foreign Cooperation Project of Fujian Province,China(Grant No.2023I0005)+2 种基金the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics(Grant No.KF202108)the National Key Research and Development Program of China(Grant No.2016YFB0402303)the Foundation of Fujian Provincial Department of Industry and Information Technology of China(Grant No.82318075)。
文摘Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle-dependent HDPC,it is found that the HDPC is mainly contributed by the circular photogalvanic effect(CPGE)current when the incident plane is perpendicular to the connection of the two contacts,whereas the circular photon drag effect(CPDE)dominates the HDPC when the incident plane is parallel to the connection of the two contacts.In addition,the CPGE of the(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate is regulated by temperature,light power,excitation wavelength,the source–drain and ionic liquid top-gate voltages,and the regulation mechanisms are discussed.It is demonstrated that(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplates may provide a good platform for novel opto-spintronics devices.
基金supported by the National Fund for Fostering Talents of Basic Science (J1103212)the Foundation for Outstanding Young Scientist in Shandong Province (BS2010CL036)~~
基金supported by the National Natural Science Foundation of China(62074037)the Science and Technology Department of Fujian Province(2020I0006)the Fujian Science&Technology Innovation Laboratory for Optoelectronic Information of China(2021ZZ124)。
文摘Focusing on the low open circuit voltage(V_(OC))and fill factor(FF)in flexible Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells,indium(In)ions are introduced into the CZTSSe absorbers near Mo foils to modify the back interface and passivate deep level defects in CZTSSe bulk concurrently for improving the performance of flexible device.The results show that In doping effectively inhibits the formation of secondary phase(Cu(S,Se)_(2))and VSndefects.Further studies demonstrate that the barrier height at the back interface is decreased and the deep level defects(Cu_(Sn)defects)in CZTSSe bulk are passivated.Moreover,the carrier concentration is increased and the V_(OC) deficit(V_(OC,def))is decreased significantly due to In doping.Finally,the flexible CZTSSe solar cell with 10.01%power conversion efficiency(PCE)has been obtained.The synergistic strategy of interface modification and bulk defects passivation through In incorporation provides a new thought for the fabrication of efficient flexible kesterite-based solar cells.
基金supported by the Recruitment Program of Global Expertsthe Fundamental Research Funds for the Central Universities(Nos.WK2060140022,WK2060140023 and WK2060140024)
文摘Antimony sulfide–selenide Sb2（S,Se）3,including Sb2S3and Sb2Se3,can be regarded as binary metal chalcogenides semiconductors since Sb2S3and Sb2Se3are isomorphous.They possess abundant elemental storage,nontoxicity,good stability with regard to moisture at elevated temperatures and suitable physical parameters for light absorption materials in solar cells.To date,quite a few attempts have been conducted in the materials synthesis,photovoltaic property investigation and device fabrication.Benefiting from previous investigation in thin film solar cells and new generation nanostructured solar cells,this class of materials has been applied in either sensitized-architecture or planar heterojunction solar cells.Decent power conversion efficiencies from 5%to 7.5%have been achieved.Apparently,further improvement on the efficiency is required for future practical applications.To give an overview of this research field,this paper displays some typical researches regarding the methodologies toward the antimony sulfide–selenide synthesis,development of interfacial materials and device fabrications,during which we highlight some critical findings that promote the efficiency enhancement.Finally,this paper proposes some outstanding issue regarding fundamental understanding of the materials,some viewpoints for the efficiency improvement and their future challenges in solar cell applications.
基金supported by the National Key R&D Program of China(2019YFB1503500)the National Natural Science Foundation of China(U1902218,11774187)the Postgraduate Education Innovation Project of Tianjin,China(2021YJSB002)。
文摘The band alignment at the front interfaces is crucial for the performance of Sb_(2)Se_(3) solar cell with superstrate configuration.Herein,a Sn O_(2)/Ti O_(2) thin film,demonstrated beneficial for carrier transport in Sb_(2)Se_(3) device by the first-principle calculation and experiment,is proposed to reduce the parasitic absorption caused by CdS and optimize the band alignment of Sb_(2)Se_(3) solar cell.Thanks to the desirable transmittance of SnO_(2)/TiO_(2) layer,the Sb_(2)Se_(3) solar cell with SnO_(2)/TiO_(2)/(CdS-38 nm) electron transport layer performances better than (CdS-70 nm)/Sb_(2)Se_(3) solar cell.The optimized band alignment,the reduced interface defects and the decreased current leakage of Sb_(2)Se_(3) solar cell enable the short-circuit current density,fill factor,open-circuit voltage and efficiency of the Sb_(2)Se_(3) solar cell increase by 26.7%,112%,33.1%and 250%respectively when comparing with TiO_(2)/Sb_(2)Se_(3) solar cell without modification.Finally,an easily prepared Sn O_(2)/Ti O_(2)/CdS ETL is successfully applied on Sb_(2)Se_(3) solar cell by the first time and contributes to the best efficiency of 7.0%in this work,which is remarkable for Sb_(2)Se_(3) solar cells free of hole transporting materials and toxic CdCl_(2) treatment.This work is expected to provide a valuable reference for future ETL design and band alignment for Sb_(2)Se_(3) solar cell and other optoelectronic devices.
基金supported by the National Natural Science Foundation of China(61874159,62074052,61974173,52072327,51702085 and 51802081)the Joint Talent Cultivation Funds of NSFC-HN(U1704151 and U1904192)+1 种基金the Zhongyuan Thousand Talents(Zhongyuan Scholars)Program of Henan Province(202101510004)the Science and Technology Innovation Talents in Universities of Henan Province(21HASTIT023)。
文摘The environmentally friendly Cu_(2)ZnSn(S,Se)_(4)(CZTSSe) compounds are promising direct bandgap materials for application in thin film solar cells, but the spontaneous surface defects disordering would lead to large open-circuit voltage deficit(V_(oc,deficit)) and significantly limit kesterite photovoltaics performance,primarily arising from the generated more recombination centers and insufficient p to n conversion at p-n junction. Herein, we establish a surface defects ordering structure in CZTSSe system via local substitution of Cu by Ag to suppress disordered Cu_(Zn) defects and generate benign n-type Zn_(Ag) donors. Taking advantage of the decreased annealing temperature of Ag F post deposition treatment(PDT), the high concentration of Ag incorporated into surface absorber facilitates the formation of surface ordered defect environment similar to that of efficient CIGS PV. The manipulation of highly doped surface structure could effectively reduce recombination centers, increase depletion region width and enlarge the band bending near p-n junction. As a result, the Ag F-PDT device finally achieves maximum efficiency of 12.34% with enhanced V_(oc) of 0.496 V. These results offer a new solution route in surface defects and energy-level engineering, and open the way to build up high quality p-n junction for future development of kesterite technology.
基金supported by the National Key R&D Program of China(2019YFB1503500,2018YFB1500200,2018YEE0203400)the Natural Science Foundation of China(U1902218,11774187)the 111 project(B16027)。
文摘It is very important to understand why a small amount of alkali metal doping in Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)solar cells can improve the conversion efficiency.In this work,Na-doped CZTSSe is prepared by a simple solution method,and then the effects on the surface properties of the absorber layer,the buffer layer growth,and the modifications of the solar cell performance induced by the Na doping are studied.The surface of the absorber layer is more Cu-depletion and less roughness due to the Na doping.In addition,the contact angle of the surface increases because of Na doping.As a consequence,the thickness of the CdS buffer layer is significantly reduced and the optical losses in the CdS buffer layer are decreased.The difference of quasi-Fermi levels(EFn-EFp) increases with a small amount of Na doping in the CZTSSe solar cell,so that open circuit voltage(VOC) increased significantly.This work offers new insights into the effects of Na doping on CZTSSe via a solution-based approach and provides a deeper understanding of the origin of the efficiency improvement of Na-doped CZTSSe thin film solar cells.
基金supported by the National Natural Science Foundation of China(U2002216,52172261,51627803,51972332,22075150,and U1902218)the National Key Research and Development Program of China(2019YFE0118100)。
文摘Photo-generated carrier recombination loss at the CZTSSe/Cd S front interface is a key issue to the opencircuit voltage(V_(OC)) deficit of Cu_(2)ZnSnS_(x)Se_(4-x)(CZTSSe) solar cells. Here, by the aid of an easy-handling spin-coating method, a thin PCBM([6,6]-phenyl-C61-butyric acid methyl ester) layer as an electron extraction layer has been introduced on the top of CdS buffer layer to modify CZTSSe/CdS/ZnO-ITO(In_(2)O_(3):Sn) interfacial properties. Based on Sn^(4+)/DMSO(dimethyl sulfoxide) solution system, a totalarea efficiency of 12.87% with a VOC of 529 m V has been achieved. A comprehensive investigation on the influence of PCBM layer on carrier extraction, transportation and recombination processes has been carried out. It is found that the PCBM layer can smooth over the Cd S film roughness, thus beneficial for a dense and flat window layer. Furthermore, this CZTSSe/Cd S/PCBM heterostructure can accelerate carrier separation and extraction and block holes from the front interface as well, which is mainly ascribed to the downward band bending of the absorber and a widened space charge region. Our work provides a feasible way to improve the front interfacial property and the cell performance of CZTSSe solar cells by the aid of organic interfacial materials.
基金supported by the National Natural Science Foundation of China (22005293, U19A2092 and 22275180)the National Key Research and Development Program of China (2019YFA0405600)+1 种基金the Institute of Energy, Hefei Comprehensive National Science Center (21KZS212)the Collaborative Innovation Program of Hefei Science Center, CAS。
基金supported by the National Key R&D Program of China(no.2018YFE0203400)the National Natural Science Foundation of China(no.62074102)+1 种基金the Guangdong Basic and Applied Basic Research Foundation(no.2022A1515010979)the Science and Technology plan project of Shenzhen(nos.JCYJ20190808120001755 and 20220808165025003)。
文摘Kesterite Cu_(2)ZnSn(S,Se)_(4)(CZTSSe)has attracted considerable attention as a non-toxic and earthabundant solar cell material.During selenization of CZTSSe film at high temperature,the reaction between CZTSSe and Mo is one of the main reasons that result in unfavorable absorber and interface quality,which leads to large open circuit voltage deficit(VOC-def)and low fill factor(FF).Herein,a WO_(3)intermediate layer introduced at the back interface can effectually inhibit the unfavorable interface reaction between absorber and back electrode in the preliminary selenization progress;thus high-quality crystals are obtained.Through this back interface engineering,the traditional problems of phase segregation,voids in the absorber and over thick Mo(S,Se)_(2)at the back interface can be well solved,which greatly lessens the recombination in the bulk and at the interface.The increased minority carrier diffusion length,decreased barrier height at back interface contact and reduced deep acceptor defects give rise to systematic improvement in VOCand FF,finally a 12.66%conversion efficiency for CZTSSe solar cell has been achieved.This work provides a simple way to fabricate highly efficient solar cells and promotes a deeper understanding of the function of intermediate layer at back interface in kesterite-based solar cells.
基金supported by National Natural Science Foundation of China (Grant No. 61974028)Fujian Normal University(FNU) Training Program of Innovation and Enterpreneurship for Undergraduates (cxxl-2019135+2 种基金20191402019143)the support from Huai An Yaoke Optoelectronics Co.Ltd。
文摘Antimony chalcogenide Sb_(2)(S, Se)_(3) is attracting a lot of attention as photovoltaic absorber owing to its rewarding photoelectric properties, low toxicity, and earth abundance. However, its device efficiency is still limited by the absorber material quality and device interface recombination. In this work, a fluorinedoped tin oxide(FTO) substrate with ultra-thin SnO_(2) layer and a low-cost stabilized carbon paste are introduced as a front and back contact layer respectively in Sb_(2)(S, Se)_(3) based planar solar cells. Over 5.2% efficiency is demonstrated in the structure of FTO/SnO_(2)/Cd S/Sb_(2)(S, Se)_3/Carbon/Ag, where the Sb_(2)(S, Se)_(3) is prepared by hydrothermal technique. The complementary device physics characterizations reveal that the interfacial recombination between TCO and Cd S is significantly suppressed by the introduction of ultra-thin SnO_(2) layer, which is profited from the leakage protection and bandgap offset engineering by its high resistivity and suitable conduction band minimum. Meanwhile, the successful adoption of the lowcost stabilized carbon as a back contact here shows an enormous potential to replace the conventional organic hole transport materials and noble metal. We hope this work can provide positive guidance to optimize Sb_(2)(S, Se)_(3) based planar solar cells in the future.
