High-quality SbTenanostructures are synthesized by a simple hydrothermal method. The morphologies of the nanostructures change from hexagonal nanoplates to nanorods with the extension of growth time. Secondary nucleat...High-quality SbTenanostructures are synthesized by a simple hydrothermal method. The morphologies of the nanostructures change from hexagonal nanoplates to nanorods with the extension of growth time. Secondary nucleation is the dominant factor responsible for the change of the morphologies. Structural analyses indicate that all the obtained nanostructures are well crystallized. IR-active phonons are mainly observed in the Raman spectra of the nanoplates and nanorods. The slight deviations are observed in the Raman modes between the nanoplates and nanorods, which could originate from confinement effect in the nanostructures.展开更多
Chalcogenide superlattices Sb_(2)Te_(3)-GeTe is a candidate for interfacial phase-change memory(iPCM) data storage devices.By employing terahertz emission spectroscopy and the transient reflectance spectroscopy togeth...Chalcogenide superlattices Sb_(2)Te_(3)-GeTe is a candidate for interfacial phase-change memory(iPCM) data storage devices.By employing terahertz emission spectroscopy and the transient reflectance spectroscopy together,we investigate the ultrafast photoexcited carrier dynamics and current transients in Sb_(2)Te_(3)-GeTe superlattices.Sample orientation and excitation polarization dependences of the THz emission confirm that ultrafast thermo-electric,shift and injection currents contribute to the THz generation in Sb_(2)Te_(3)-GeTe superlattices.By decreasing the thickness and increasing the number of GeTe and Sb_(2)Te_(3) layer,the interlayer coupling can be enhanced,which significantly reduces the contribution from circular photo-galvanic effect(CPGE).A photo-induced bleaching in the transient reflectance spectroscopy probed in the range of~1100 nm to~1400 nm further demonstrates a gapped state resulting from the interlayer coupling.These demonstrates play an important role in the development of iPCM-based high-speed optoelectronic devices.展开更多
（Bi_2Te_3）_（0.2）（Sb_2Te_3）_（0.8） thermoelectric material was sintered via a field activated and pressure assisted sintering（FAPAS） process.By applying different current intensity（0,60,320 A/cm^2） in the si...（Bi_2Te_3）_（0.2）（Sb_2Te_3）_（0.8） thermoelectric material was sintered via a field activated and pressure assisted sintering（FAPAS） process.By applying different current intensity（0,60,320 A/cm^2） in the sintering process,the effects of electric current on the microstructure and thermoelectric performance were investigated.This demonstrated that the application of electric current in the sintering process could significantly improve the uniformity and density of（Bi_2Te_3）_（0.2）（Sb_2Te_3）_（0.8） samples.When the current intensity was raised to 320 A/cm^2,the preferred orientation of grains was observed.Moreover,positive effects on the thermoelectric performance of applying electric current in the sintering process were also confirmed.An increase of 0.02 and 0.11 in the maximum figure of merit ZT value could be acquired by applying current of 60 and 320 A/cm^2,respectively.展开更多
Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle...Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle-dependent HDPC,it is found that the HDPC is mainly contributed by the circular photogalvanic effect(CPGE)current when the incident plane is perpendicular to the connection of the two contacts,whereas the circular photon drag effect(CPDE)dominates the HDPC when the incident plane is parallel to the connection of the two contacts.In addition,the CPGE of the(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate is regulated by temperature,light power,excitation wavelength,the source–drain and ionic liquid top-gate voltages,and the regulation mechanisms are discussed.It is demonstrated that(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplates may provide a good platform for novel opto-spintronics devices.展开更多
通过研究组分、掺杂和晶体生长条件对材料温差电性能的影响,采用熔炼—区熔法研制出较均匀的高性能赝三元 p 型温差电材料 Te:(Sb_2Te_3)_0.75(1-x)(Bi_2Te_3)_(0.25(1-x))(Sb_2Se_3)(?)生长出的晶锭的85%的部分,温差电优值 z=2.9～3.3&...通过研究组分、掺杂和晶体生长条件对材料温差电性能的影响,采用熔炼—区熔法研制出较均匀的高性能赝三元 p 型温差电材料 Te:(Sb_2Te_3)_0.75(1-x)(Bi_2Te_3)_(0.25(1-x))(Sb_2Se_3)(?)生长出的晶锭的85%的部分,温差电优值 z=2.9～3.3×10^(-3)/K。其性能高于目前国内的赝二元材料,达到了国外的较高水平,用这种材料制作的温差电致冷器件获得了很好的致冷效果。展开更多
Mo,as a dopant,is doped into SbTe to improve its thermal stability.It is shown in this paper that the Mo-doped Sb_(2)Te_(3)(Mo_(0.26)Sb_(2)Te_(3),MST)material possesses phase change memory(PCM)applications.MST has bet...Mo,as a dopant,is doped into SbTe to improve its thermal stability.It is shown in this paper that the Mo-doped Sb_(2)Te_(3)(Mo_(0.26)Sb_(2)Te_(3),MST)material possesses phase change memory(PCM)applications.MST has better thermal stability than Sb_(2)Te_(3)(ST)and will crystallize only when the annealing temperature is higher than 250℃.With the good thermal stability,MST-based PCM cells have a fast crystallization time of 6 ns.Furthermore,endurance up to 4×10^(5) cycles with a resistance ratio of more than one order of magnitude makes MST a promising candidate for PCM applications.展开更多
Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supp...Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supply,but obtaining highthermoelectric‐performance thin films remains a big challenge.In the present work,a p‐type Bi_(x)Sb_(2−x)Te_(3) thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility(less than 5%increase in resistance after 1000 cycles of bending at a radius of∼5 mm).The favorable comprehensive performance of the Bi_(x)Sb_(2−x)Te_(3) flexible thin film is due to its excellent crystallinity,optimized carrier concentration,and low elastic modulus,which have been verified by experiments and theoretical calculations.Further,a flexible device is fabricated using the prepared p‐type Bi_(x)Sb_(2−x)Te_(3) and n‐type Ag_(2)Se thin films.Consequently,an outstanding power density of∼1028μWcm^(−2)is achieved at a temperature difference of 25 K.This work extends a novel concept to the fabrication of highperformance flexible thin films and devices for wearable energy harvesting.展开更多
基金supported by the National Natural Science Foundation of China(Grant Nos.11104250 and 61274099)the Fund from the Science Technology Department of Zhejiang Province,China(Grant No.2012C21007)the Fund for the Zhejiang Provincial Innovation Team,China(Grant No.2011R50012)
文摘High-quality SbTenanostructures are synthesized by a simple hydrothermal method. The morphologies of the nanostructures change from hexagonal nanoplates to nanorods with the extension of growth time. Secondary nucleation is the dominant factor responsible for the change of the morphologies. Structural analyses indicate that all the obtained nanostructures are well crystallized. IR-active phonons are mainly observed in the Raman spectra of the nanoplates and nanorods. The slight deviations are observed in the Raman modes between the nanoplates and nanorods, which could originate from confinement effect in the nanostructures.
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2023YFF0719200 and 2022YFA1404004)the National Natural Science Foundation of China(Grant Nos.62322115,61988102,61975110,62335012,and 12074248)+3 种基金111 Project(Grant No.D18014)the Key Project supported by Science and Technology Commission Shanghai Municipality(Grant No.YDZX20193100004960)Science and Technology Commission of Shanghai Municipality(Grant Nos.22JC1400200 and 21S31907400)General Administration of Customs People’s Republic of China(Grant No.2019HK006)。
文摘Chalcogenide superlattices Sb_(2)Te_(3)-GeTe is a candidate for interfacial phase-change memory(iPCM) data storage devices.By employing terahertz emission spectroscopy and the transient reflectance spectroscopy together,we investigate the ultrafast photoexcited carrier dynamics and current transients in Sb_(2)Te_(3)-GeTe superlattices.Sample orientation and excitation polarization dependences of the THz emission confirm that ultrafast thermo-electric,shift and injection currents contribute to the THz generation in Sb_(2)Te_(3)-GeTe superlattices.By decreasing the thickness and increasing the number of GeTe and Sb_(2)Te_(3) layer,the interlayer coupling can be enhanced,which significantly reduces the contribution from circular photo-galvanic effect(CPGE).A photo-induced bleaching in the transient reflectance spectroscopy probed in the range of~1100 nm to~1400 nm further demonstrates a gapped state resulting from the interlayer coupling.These demonstrates play an important role in the development of iPCM-based high-speed optoelectronic devices.
基金Project support by the National Research Program of China(No.50975190)
文摘（Bi_2Te_3）_（0.2）（Sb_2Te_3）_（0.8） thermoelectric material was sintered via a field activated and pressure assisted sintering（FAPAS） process.By applying different current intensity（0,60,320 A/cm^2） in the sintering process,the effects of electric current on the microstructure and thermoelectric performance were investigated.This demonstrated that the application of electric current in the sintering process could significantly improve the uniformity and density of（Bi_2Te_3）_（0.2）（Sb_2Te_3）_（0.8） samples.When the current intensity was raised to 320 A/cm^2,the preferred orientation of grains was observed.Moreover,positive effects on the thermoelectric performance of applying electric current in the sintering process were also confirmed.An increase of 0.02 and 0.11 in the maximum figure of merit ZT value could be acquired by applying current of 60 and 320 A/cm^2,respectively.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.62074036,61674038,and 11574302)the Foreign Cooperation Project of Fujian Province,China(Grant No.2023I0005)+2 种基金the Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics(Grant No.KF202108)the National Key Research and Development Program of China(Grant No.2016YFB0402303)the Foundation of Fujian Provincial Department of Industry and Information Technology of China(Grant No.82318075)。
文摘Helicity-dependent photocurrent(HDPC)of the surface states in a high-quality topological insulator(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate grown by chemical vapor deposition(CVD)is investigated.By investigating the angle-dependent HDPC,it is found that the HDPC is mainly contributed by the circular photogalvanic effect(CPGE)current when the incident plane is perpendicular to the connection of the two contacts,whereas the circular photon drag effect(CPDE)dominates the HDPC when the incident plane is parallel to the connection of the two contacts.In addition,the CPGE of the(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplate is regulated by temperature,light power,excitation wavelength,the source–drain and ionic liquid top-gate voltages,and the regulation mechanisms are discussed.It is demonstrated that(Bi_(0.7)Sb_(0.3))_(2)Te_(3)nanoplates may provide a good platform for novel opto-spintronics devices.
文摘通过研究组分、掺杂和晶体生长条件对材料温差电性能的影响,采用熔炼—区熔法研制出较均匀的高性能赝三元 p 型温差电材料 Te:(Sb_2Te_3)_0.75(1-x)(Bi_2Te_3)_(0.25(1-x))(Sb_2Se_3)(?)生长出的晶锭的85%的部分,温差电优值 z=2.9～3.3×10^(-3)/K。其性能高于目前国内的赝二元材料,达到了国外的较高水平,用这种材料制作的温差电致冷器件获得了很好的致冷效果。
基金Project supported by the National Key Research and Development Program of China(Grant Nos.2017YFB0701703 and 2017YFA0206101)the National Natural Science Foundation of China(Grant No.61874151)the Science and Technology Council of Shanghai,China(Grant Nos.19JC1416801 and 19JC1416802).
文摘Mo,as a dopant,is doped into SbTe to improve its thermal stability.It is shown in this paper that the Mo-doped Sb_(2)Te_(3)(Mo_(0.26)Sb_(2)Te_(3),MST)material possesses phase change memory(PCM)applications.MST has better thermal stability than Sb_(2)Te_(3)(ST)and will crystallize only when the annealing temperature is higher than 250℃.With the good thermal stability,MST-based PCM cells have a fast crystallization time of 6 ns.Furthermore,endurance up to 4×10^(5) cycles with a resistance ratio of more than one order of magnitude makes MST a promising candidate for PCM applications.
基金National Natural Science Foundation of China,Grant/Award Number:62274112Guangdong Basic and Applied Basic Research Foundation,Grant/Award Number:2022A1515010929Science and Technology Plan project of Shenzhen,Grant/Award Numbers:JCYJ20220531103601003,20220810154601001。
文摘Use of a flexible thermoelectric source is a feasible approach to realizing selfpowered wearable electronics and the Internet of Things.Inorganic thin films are promising candidates for fabricating flexible power supply,but obtaining highthermoelectric‐performance thin films remains a big challenge.In the present work,a p‐type Bi_(x)Sb_(2−x)Te_(3) thin film is designed with a high figure of merit of 1.11 at 393 K and exceptional flexibility(less than 5%increase in resistance after 1000 cycles of bending at a radius of∼5 mm).The favorable comprehensive performance of the Bi_(x)Sb_(2−x)Te_(3) flexible thin film is due to its excellent crystallinity,optimized carrier concentration,and low elastic modulus,which have been verified by experiments and theoretical calculations.Further,a flexible device is fabricated using the prepared p‐type Bi_(x)Sb_(2−x)Te_(3) and n‐type Ag_(2)Se thin films.Consequently,an outstanding power density of∼1028μWcm^(−2)is achieved at a temperature difference of 25 K.This work extends a novel concept to the fabrication of highperformance flexible thin films and devices for wearable energy harvesting.
