The influence of vibration is already one of main obstacles for improving the nano measuring accuracy.The techniques of anti-vibration,vibration isolation and vibration compensation become an important branch in nano ...The influence of vibration is already one of main obstacles for improving the nano measuring accuracy.The techniques of anti-vibration,vibration isolation and vibration compensation become an important branch in nano measuring field.Starting with the research of sensitivity to vibration of scanning tunneling microscope(STM),the theory,techniques and realization methods of nano vibration sensor based on tunnel effect are initially investigated,followed by developing the experimental devices.The experiments of the vibration detection and vibration compensation are carried out.The experimental results show that vibration sensor based on tunnel effect is characterized by high sensitivity,good frequency characteristic and the same vibratory response characteristic consistent with STM.展开更多
Nanocrystalline CdSe thin film prepared by chemical solution deposition was imaged in air with a scanning tunnelling microscope(STM). Scanning tunnelling current spectroscopy(STS) was taken at a fixed tip - sample sep...Nanocrystalline CdSe thin film prepared by chemical solution deposition was imaged in air with a scanning tunnelling microscope(STM). Scanning tunnelling current spectroscopy(STS) was taken at a fixed tip - sample separation. Tunnelling current(i) - voltage(v) curve and differential conductance spectrum show an n-type schottky rectifying behaviour and yield a direct measure of band gap energy. An increase of bandgap energy (1.8 - 2.1eV) was measured indicating energy quantization of this particular thin film.,展开更多
This paper reports that the growth of RuO2（110） thin layer growth on Ru（0001） has been investigated by means of scanning tunnelling microscope （STM）. The STM images showed a domain structure with three rotationa...This paper reports that the growth of RuO2（110） thin layer growth on Ru（0001） has been investigated by means of scanning tunnelling microscope （STM）. The STM images showed a domain structure with three rotational domains of RuO2（110） rotated by an angle of 120°. The as-grown RuO2（110） thin layer is expanded from the bulk-truncated RuO2（110） due to the large mismatch between RuO2（110） and the Ru（0001） substrate. The results also indicate that growth of RuO2（110） thin layer on the Ru（0001） substrate by oxidation tends first to formation of the Ru-O （oxygen） chains in the [001] direction of RuO2 （110）.展开更多
A nover technique for the fabrication of the tip for e tectrochemical scanning tunneting microscopy(ECSTM)is presented. The curvature radius of the fabricated tip is smatter than 1 μM. Faradaic leakage current is tes...A nover technique for the fabrication of the tip for e tectrochemical scanning tunneting microscopy(ECSTM)is presented. The curvature radius of the fabricated tip is smatter than 1 μM. Faradaic leakage current is tess than 0.1nA in the sotution of 1 mol/L NaCl. The atomic image of highty oriented pyrotytic graphite (HOPG)has been taken using the prepared tip.展开更多
文摘The influence of vibration is already one of main obstacles for improving the nano measuring accuracy.The techniques of anti-vibration,vibration isolation and vibration compensation become an important branch in nano measuring field.Starting with the research of sensitivity to vibration of scanning tunneling microscope(STM),the theory,techniques and realization methods of nano vibration sensor based on tunnel effect are initially investigated,followed by developing the experimental devices.The experiments of the vibration detection and vibration compensation are carried out.The experimental results show that vibration sensor based on tunnel effect is characterized by high sensitivity,good frequency characteristic and the same vibratory response characteristic consistent with STM.
文摘Nanocrystalline CdSe thin film prepared by chemical solution deposition was imaged in air with a scanning tunnelling microscope(STM). Scanning tunnelling current spectroscopy(STS) was taken at a fixed tip - sample separation. Tunnelling current(i) - voltage(v) curve and differential conductance spectrum show an n-type schottky rectifying behaviour and yield a direct measure of band gap energy. An increase of bandgap energy (1.8 - 2.1eV) was measured indicating energy quantization of this particular thin film.,
基金Project supported by the National Natural Science Foundation of China （Grant No 10274072）, and the Specialized Research Fund for the Doctoral Program of Higher Education of China （Grant No 20030335017）.
文摘This paper reports that the growth of RuO2（110） thin layer growth on Ru（0001） has been investigated by means of scanning tunnelling microscope （STM）. The STM images showed a domain structure with three rotational domains of RuO2（110） rotated by an angle of 120°. The as-grown RuO2（110） thin layer is expanded from the bulk-truncated RuO2（110） due to the large mismatch between RuO2（110） and the Ru（0001） substrate. The results also indicate that growth of RuO2（110） thin layer on the Ru（0001） substrate by oxidation tends first to formation of the Ru-O （oxygen） chains in the [001] direction of RuO2 （110）.
文摘A nover technique for the fabrication of the tip for e tectrochemical scanning tunneting microscopy(ECSTM)is presented. The curvature radius of the fabricated tip is smatter than 1 μM. Faradaic leakage current is tess than 0.1nA in the sotution of 1 mol/L NaCl. The atomic image of highty oriented pyrotytic graphite (HOPG)has been taken using the prepared tip.
