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Simulation and Experimental Research on a Schottky Gate Resonant Tunneling Transistor
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作者 宋瑞良 毛陆虹 +1 位作者 郭维廉 余长亮 《Journal of Semiconductors》 EI CAS CSCD 北大核心 2008年第6期1062-1065,共4页
A Schottky gate resonant tunneling transistor (SGRTT) is fabricated. Relying on simulation by ATLAS software,we find that the gate voltages can be used to control the current of SGRTT when the emitter terminal is gr... A Schottky gate resonant tunneling transistor (SGRTT) is fabricated. Relying on simulation by ATLAS software,we find that the gate voltages can be used to control the current of SGRTT when the emitter terminal is grounded and a positive bias voltage is applied to the collector terminal. When the collector terminal is grounded, the gate voltages can control the peak voltage. As revealed by measurement results, the reason is that the gate voltages and the electric field distribution on emitter and collector terminal change the distribution of the depletion region. 展开更多
关键词 schottky gate resonant tunneling transistor device simulation depletion region
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