In order to improve the reverse voltage capacity and low junction temperature characteristics of the traditional silicon-based Schottky diode,a Schottky diode with high reverse voltage capacity and high junction tempe...In order to improve the reverse voltage capacity and low junction temperature characteristics of the traditional silicon-based Schottky diode,a Schottky diode with high reverse voltage capacity and high junction temperature was fabricated using ion implantation,NiPt60 sputtering,silicide-forming and other major technologies on an N-type silicon epitaxial layer of 10.6-11.4μm and（2.2-2.4）×10^15 cm^-3 doping concentration.The measurement results show that the junction temperature of the Schottky diode fabricated can reach 175 °C,that is 50°C higher than that of the traditional one;the reverse voltage capacity VR can reach 112 V,that is 80 V higher than that of the traditional one;the leakage current is only 2μA and the forward conduction voltage drop is VF=0.71 V at forward current If =3 A.展开更多
基金Project supported by the National Natural Science Foundation of China(No.61366006)the Research Projects of Higher Education,Gansu’s Ministry of Education(No.213019)the Fundamental Research Funds for Gansu Provincial Finance Department(No.213048)
文摘In order to improve the reverse voltage capacity and low junction temperature characteristics of the traditional silicon-based Schottky diode,a Schottky diode with high reverse voltage capacity and high junction temperature was fabricated using ion implantation,NiPt60 sputtering,silicide-forming and other major technologies on an N-type silicon epitaxial layer of 10.6-11.4μm and（2.2-2.4）×10^15 cm^-3 doping concentration.The measurement results show that the junction temperature of the Schottky diode fabricated can reach 175 °C,that is 50°C higher than that of the traditional one;the reverse voltage capacity VR can reach 112 V,that is 80 V higher than that of the traditional one;the leakage current is only 2μA and the forward conduction voltage drop is VF=0.71 V at forward current If =3 A.
