Monolayer MoS_(2)/n-Si Heterostructure Schottky Solar Cell

Monolayer MoS_(2)has a promising optoelectronics property,with a bandgap in the visible range;the material is a potential candidate for solar cell applications.In this work,we grew MoS_(2)monolayers using a low-pressure chemical vapor deposition approach.To produce uniform wafer-scale MoS_(2)monolayer films,precursors molybdenum dioxide(MoO_(2))and sulfur(S)are utilized.Atomic force microscopy was used to quantify the thickness of the monolayers,and the result was validated by Raman spectroscopy.Transmission electron microscopy(TEM)was used to confirm the crystalline quality of the monolayers,and photoluminescence spectroscopy was used to evaluate their optical properties.We were able to create a Schottky solar cell with a MoS_(2)monolayer up to 1 cm2 area by transferring monolayer film to n-type silicon.The MoS_(2)/n-Si Schottky solar cell demonstrated photovoltaic characteristics with a short circuit current density of 14.8 mA cm^(-2)and an open-circuit voltage of 0.32 V under 100 mW cm^(-2)illumination.The fill factor and energy conversion efficiency were 53%and 2.46%,respectively,with the highest external quantum efficiency at 530 nm being 44%.

Effect of annealing on performance of PEDOT:PSS/n-GaN Schottky solar cells

We develop a heterojunction-based Schottky solar cell consisting of n-type GaN and PEDOT：PSS and also investigate the effect of annealing on the performance of the solar cell. The results show that the open circuit voltage （Voc） increases from 0.54 V to 0.56 V, 0.71 V and 0.82 eV while decreases to 0.69 eV after annealing at 100 ℃, 130 ℃, 160 ℃, and 200 ℃, respectively, which can be ascribed to the change of barrier height of PEDOT：PSS/GaN Schottky contact induced by variation of the work function of the PEDOT：PSS. Furthermore, the conductivity and surface roughness measurements of the PEDOT：PSS indicate that annealing can increase the grain size and improve the connectivity between PEDOT and PSS particles, and cause thermal degradation at the same time, which leads to the rise in short-circuit current density （ISC） up to 160 ℃ and the dropoff in ISC after annealing at 200 ℃.

Photovoltaic devices employing ternary PbSxTe1-x nanocrystals

Colloidal quantum dots （CQDs）, especially lead chalcogenide CQDs, are regarded as promising materials for the next generation solar cells, due to their large absorption coefficient, excellent charge transport, and multiple exciton generation effect. We successfully synthesized highly-crystalline, monodispersed, well-alloyed PbSxTe1-x nanocrystals via a one-pot, hot injection reaction method. Energy-filtered trans- mission electron microscopy suggested that the S and Te anions were uniformly distributed in the alloy nanoparticles. The photovoltaic performance of COD solar cells based on ternary PbSxTe1-x was reported for the first time. The photovoltaic devices using PbSxTe1-x were more efficient than either the pure PbS or the PbTe based devices. In addition, the PbSxTe1-x based devices showed a significantly improved sta- bility than that of the PbTe based devices.