Effect of Cu doping on the secondary electron yield of carbon films on Ag-plated aluminum alloy

Reducing the secondary electron yield(SEY)of Ag-plated aluminum alloy is important for high-power microwave components.In this work,Cu doped carbon films are prepared and the secondary electron emission characteristics are studied systematically.The secondary electron coefficientδ_(max) of carbon films increases with the Cu contents increasing at first,and then decreases to 1.53 at a high doping ratio of 0.645.From the viewpoint of surface structure,the higher the content of Cu is,the rougher the surface is,since more cluster particles appear on the surface due to the small solid solubility of Cu in the amorphous carbon network.However,from viewpoint of the electronic structure,the reduction of the sp2 hybrid bonds will increase the SEY effect as the content of Cu increases,due to the decreasing probability of collision with free electrons.Thus,the two mechanisms would compete and coexist to affect the SEY characteristics in Cu doped carbon films.

A synthetic semi-empirical physical model of secondary electron yield of metals under E-beam irradiation

Calculations of secondary electron yield（SEY） by physical formula can hardly accord with experimental results precisely. Simplified descriptions of internal electron movements in the calculation and complex surface contamination states of real sample result in notable difference between simulations and experiments. In this paper, in order to calculate SEY of metal under complicated surface state accurately, we propose a synthetic semi-empirical physical model. The processes of excitation of internal secondary electron（SE） and movement toward surface can be simulated using this model.This model also takes into account the influences of incident angle and backscattering electrons as well as the surface gas contamination. In order to describe internal electronic states accurately, the penetration coefficient of incident electron is described as a function of material atom number. Directions of internal electrons are set to be uniform in each angle. The distribution of internal SEs is proposed by considering both the integration convergence and the cascade scattering process.In addition, according to the experiment data, relationship among desorption gas quantities, sample ultimate temperature and SEY is established. Comparing with experiment results, this synthetic semi-empirical physical model can describe the SEY of metal better than former formulas, especially in the aspect of surface contaminated states. The proposed synthetic semi-empirical physical model and presented results in this paper can be helpful for further studying SE emission, and offer an available method for estimating and taking advantage of SE emission accurately.

Secondary electron emission and photoemission from a negative electron affinity semiconductor with large mean escape depth of excited electrons

The formulae for parameters of a negative electron affinity semiconductor(NEAS)with large mean escape depth of secondary electrons A(NEASLD)are deduced.The methods for obtaining parameters such asλ,B,E_(pom)and the maximumδandδat 100.0 keV≥E_(po)≥1.0 keV of a NEASLD with the deduced formulae are presented(B is the probability that an internal secondary electron escapes into the vacuum upon reaching the emission surface of the emitter,δis the secondary electron yield,E_(po)is the incident energy of primary electrons and E_(pom)is the E_(po)corresponding to the maximumδ).The parameters obtained here are analyzed,and it can be concluded that several parameters of NEASLDs obtained by the methods presented here agree with those obtained by other authors.The relation between the secondary electron emission and photoemission from a NEAS with large mean escape depth of excited electrons is investigated,and it is concluded that the presented method of obtaining A is more accurate than that of obtaining the corresponding parameter for a NEAS with largeλ_(ph)(λ_(ph)being the mean escape depth of photoelectrons),and that the presented method of calculating B at E_(po)>10.0 keV is more widely applicable for obtaining the corresponding parameters for a NEAS with largeλ_(ph).

New neutralization method for measuring the secondary electron yield of insulative material

Purpose The limitation of the traditional bias neutralization method is proved,and a new neutralization method is proposed to measure the secondary electron yield of insulating materials.Method While measuring the secondary electron yield of an insulating sample using the bias neutralization method,the region of an insulating sample irradiated by an electron beam may not be neutralized,because electrons enforced by the bias are not returned to the proper location.The above-mentioned phenomenon is verified by a simulation.To achieve proper neutralization,we propose a method of moving the electron beam to irradiate the metal sample stage without applying a bias voltage,which generates many low-energy electrons around the insulating sample.Those electrons are automatically attracted to the positively charged region of the insulating sample surface and rejected if enough electrons accumulated on the surface.Result and conclusion The limitation of neutralization of bias voltage was verified by simulation,and the new neutralization method was proved to be effective through experiments.

Secondary electron emission yield from vertical graphene nanosheets by helicon plasma deposition

The secondary electron emission yields of materials depend on the geometries of their surface structures.In this paper,a method of depositing vertical graphene nanosheet(VGN)on the surface of the material is proposed,and the secondary electron emission(SEE)characteristics for the VGN structure are studied.The COMSOL simulation and the scanning electron microscope(SEM)image analysis are carried out to study the secondary electron yield(SEY).The effect of aspect ratio and packing density of VGN on SEY under normal incident condition are studied.The results show that the VGN structure has a good effect on suppressing SEE.

The charging stability of different silica glasses studied by measuring the secondary electron emission yield

This paper reports that the charging properties of lead silica, Suprasil silica and Infrasil silica are investigated by measuring the secondary electron emission （SEE） yield. At a primary electron beam energy of 25 keV, the intrinsic SEE yields measured at very low injection dose are 0.54, 0.29 and 0.35, respectively for lead silica, Suprasil and Infrasil silica glass. During the first e-beam irradiation at a high injection current density, the SEE yields of lead silica and Suprasil increase continuously and slowly from their initial values to a steady state. At the steady state, the SEE yields of lead silica and Suprasil are 0.94 and 0.93, respectively. In Infrasil, several charging and discharging processes are observed during the experiment. This shows that Infrasil does not reach its steady state. Two hours later, all samples are irradiated again in the same place as the first irradiation at a low current density and low dose. The SEE yields of lead silica, Suprasil and Infrasil are 0.69, 0.76 and 0.55, respectively. Twenty hours later, the values are 0.62, 0.64 and 0.33, respectively, for lead silica, Suprasil and Infrasil. These results show that Infrasil has poor charging stability. Comparatively, the charging stability of lead silica is better, and Suprasil has the best characteristics.

Analysis of secondary electron emission using the fractal method

Based on the rough surface topography with fractal parameters and the Monte–Carlo simulation method for secondary electron emission properties, we analyze the secondary electron yield(SEY) of a metal with rough surface topography. The results show that when the characteristic length scale of the surface, G, is larger than 1 × 10^(-7), the surface roughness increases with the increasing fractal dimension D. When the surface roughness becomes larger, it is difficult for entered electrons to escape surface. As a result, more electrons are collected and then SEY decreases. When G is less than 1 × 10^(-7),the effect of the surface topography can be ignored, and the SEY almost has no change as the dimension D increases. Then,the multipactor thresholds of a C-band rectangular impedance transfer and an ultrahigh-frequency-band coaxial impedance transfer are predicted by the relationship between the SEY and the fractal parameters. It is verified that for practical microwave devices, the larger the parameter G is, the higher the multipactor threshold is. Also, the larger the value of D,the higher the multipactor threshold.

Secondary electron emission characteristics of graphene films with copper substrate

For modern and future circular accelerators, especially high-intensity proton synchrotrons or colliders, the electron cloud effect is a key issue. So, in order to reduce the electron cloud effect, exploring very low secondary electron yield （SEY） material or coating used in vacuum tubes becomes necessary. In this article, we studied the SEY characteristics of graphene films with different thicknesses which were deposited on copper substrates using chemical vapor deposition. The SEY tests were done at temperatures of 25 ℃and vacuum pressure of （2-6）x 10-9 torr. The properties of the deposited graphene films were investigated by X-ray photoelectron spectroscopy （XPS） and Raman spectroscopy. The SEY curves show that the number of graphene layers has a great effect on the SEY of graphene films. The maximum SEY of graphene films decreases with the increase of the number of layers. The maximum SEY of 6-8 layers of graphene film is 1.25. These results have a great significance for next-generation particle accelerators.

Experimental Study on Electrical Breakdown for Devices with Micrometer Gaps

The understanding of electrical breakdown in atmospheric air across micrometer gaps is critically important for the insulation design of micro ＆ nano electronic devices. In this paper, planar aluminum electrodes with gaps ranging from 2μm to 40 #m were fabricated by microelectromechanical system technology. The influence factors including gap width and surface dielectric states were experimentally investigated using the home-built test and measurement system. Results showed that for SiO2 layers the current sustained at 2-3 nA during most of the pre-breakdown period, and then rose rapidly to 10-30 nA just before breakdown due to field electron emission, followed by the breakdown. The breakdown voltage curves demonstrated three stages： （1） a constantly decreasing region （the gap width d 〈5 μm）, where the field emission effect played an important role just near breakdown, supplying enough initial electrons for the breakdown process; （2） a plateau region with a near constant breakdown potential （5 μm〈 d 〈10 μm）; （3） a region for large gaps that adhered to Paschen＇s curve （d 〉10μm）. And the surface dielectric states including the surface resistivity and secondary electron yield were verified to be related to the propagation of discharge due to the interaction between initial electrons and dielectrics.