In this study, thin films were produced by magnetron sputtering NC （nanocrystalline） specimens of titanium saturated in hydrogen and were evaluated by layer-by-layer SIMS （secondary ion mass spectrometry） and Rama...In this study, thin films were produced by magnetron sputtering NC （nanocrystalline） specimens of titanium saturated in hydrogen and were evaluated by layer-by-layer SIMS （secondary ion mass spectrometry） and Raman spectroscopy. Due to magnetron sputtering, the chemical composition of the films was non-homogeneous and was variable among layers. Moreover, in the deposition of specimens saturated with hydrogen, hydrogen diffused throughout the depth of the film; diffusion, however, was restricted to the area near the film-substrate interface, affecting less than 50% of the thickness of the film.展开更多
We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy （MBE）, The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-...We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy （MBE）, The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-voltage （l-V） measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49 ± 0.03 eV and capture cross-section of 8,57 ×10^-18 cm^2. Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy （SIMS） of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen-zinc vacancy complex in ZnO,展开更多
The diffusion property of sulfur on the soda-lime-silicate float glass surface was studied by using secondary ion mass spectroscopy（SIMS）.According to the Fick＇s Second Law,two models of diffusion of sulfur on the ...The diffusion property of sulfur on the soda-lime-silicate float glass surface was studied by using secondary ion mass spectroscopy（SIMS）.According to the Fick＇s Second Law,two models of diffusion of sulfur on the glass surface were built.When the diffusion of sulfate（S^6＋） is considered uniquely,the concentration-depth profile of sulfur can not be fitted very well,especially on the top surfaces of the air side and tin side of float glass.So the diffusion of sulfide（S^2-） on the profile of sulfur can not be ignored.The concentration-depth profile of sulfur on both sides of glass can be fitted more exactly when both S^6＋ and S^2- are considerd.Based on the above-mentioned fitting results,it is concluded that the diffusion coefficents of S^6＋ and S^2- of tin side are larger than those of the air side.Moreover,the diffusion coefficents are related to the contacted medium.展开更多
文摘In this study, thin films were produced by magnetron sputtering NC （nanocrystalline） specimens of titanium saturated in hydrogen and were evaluated by layer-by-layer SIMS （secondary ion mass spectrometry） and Raman spectroscopy. Due to magnetron sputtering, the chemical composition of the films was non-homogeneous and was variable among layers. Moreover, in the deposition of specimens saturated with hydrogen, hydrogen diffused throughout the depth of the film; diffusion, however, was restricted to the area near the film-substrate interface, affecting less than 50% of the thickness of the film.
文摘We report deep level transient spectroscopy results from ZnO layers grown on silicon by molecular beam epitaxy （MBE）, The hot probe measurements reveal mixed conductivity in the as-grown ZnO layers, and the current-voltage （l-V） measurements demonstrate a good quality p-type Schottky device. A new deep acceptor level is observed in the ZnO layer having activation energy of 0.49 ± 0.03 eV and capture cross-section of 8,57 ×10^-18 cm^2. Based on the results from Raman spectroscopy, photoluminescence, and secondary ion mass spectroscopy （SIMS） of the ZnO layer, the observed acceptor trap level is tentatively attributed to a nitrogen-zinc vacancy complex in ZnO,
基金Funded by National Natural Science Foundation of China(NSFC)(No.50972136)National Science and Technology S upporting P rogram(No.2015BAA02B00)+1 种基金National Key Technologies R&D Program(No.2016YFB0303900)the Fundamental Research Funds of State Key Laboratory for Advanced Technology of Float Glass
文摘The diffusion property of sulfur on the soda-lime-silicate float glass surface was studied by using secondary ion mass spectroscopy（SIMS）.According to the Fick＇s Second Law,two models of diffusion of sulfur on the glass surface were built.When the diffusion of sulfate（S^6＋） is considered uniquely,the concentration-depth profile of sulfur can not be fitted very well,especially on the top surfaces of the air side and tin side of float glass.So the diffusion of sulfide（S^2-） on the profile of sulfur can not be ignored.The concentration-depth profile of sulfur on both sides of glass can be fitted more exactly when both S^6＋ and S^2- are considerd.Based on the above-mentioned fitting results,it is concluded that the diffusion coefficents of S^6＋ and S^2- of tin side are larger than those of the air side.Moreover,the diffusion coefficents are related to the contacted medium.
