The method of vertical Bridgman seeded growth of Cdi.Zn.Te crystals was studied. This method ispromising in obtaining large size single crystals and improving the crystal structure. However, some prob-lems such as see...The method of vertical Bridgman seeded growth of Cdi.Zn.Te crystals was studied. This method ispromising in obtaining large size single crystals and improving the crystal structure. However, some prob-lems such as seeded growth failurc exist at present.(111)-oriented Cd_(0.96)Zn_(0.04)Te single crystal substrateswith size greater than 15×15 mm￣2 arc obtained. The FWHM ranges from 18 to 66 arc.sec and theresistivity is greater than 10￣6 obmem.展开更多
During the crystal grown by VBM, the solid/liquid interface configurations greatly influence the quality of as-grown crystals. In this paper, finite element method (FEM) was used to simulate the growth process of CdZn...During the crystal grown by VBM, the solid/liquid interface configurations greatly influence the quality of as-grown crystals. In this paper, finite element method (FEM) was used to simulate the growth process of CdZnTe crystal. The effects of different crucible moving rates and temperature gradient of adiabatic zone on crystal growth rate and solid-liquid interface configuration were studied as well. Simulation results show that when crucible moves at the rate of about 1mm/h, which is nearly equal to crystal growth rate, nearly flat solid/liquid interface and little variation of axial temperature gradient near it can be attained, which are well consistent with the results of experiments. CdZnTe crystal with low dislocation density can be obtained by employing appropriate crucible moving rate during the crystal growth process.展开更多
文摘The method of vertical Bridgman seeded growth of Cdi.Zn.Te crystals was studied. This method ispromising in obtaining large size single crystals and improving the crystal structure. However, some prob-lems such as seeded growth failurc exist at present.(111)-oriented Cd_(0.96)Zn_(0.04)Te single crystal substrateswith size greater than 15×15 mm￣2 arc obtained. The FWHM ranges from 18 to 66 arc.sec and theresistivity is greater than 10￣6 obmem.
基金National Natural Science Foundation of China (10175040) Foundation of Shanghai Education Committee(02AK30) Key Subject Construction Project (Material Science) of Shanghai Education Committee
文摘During the crystal grown by VBM, the solid/liquid interface configurations greatly influence the quality of as-grown crystals. In this paper, finite element method (FEM) was used to simulate the growth process of CdZnTe crystal. The effects of different crucible moving rates and temperature gradient of adiabatic zone on crystal growth rate and solid-liquid interface configuration were studied as well. Simulation results show that when crucible moves at the rate of about 1mm/h, which is nearly equal to crystal growth rate, nearly flat solid/liquid interface and little variation of axial temperature gradient near it can be attained, which are well consistent with the results of experiments. CdZnTe crystal with low dislocation density can be obtained by employing appropriate crucible moving rate during the crystal growth process.
基金Projects (50872111, 50902113, 61274081) supported by the National Natural Science Foundation of ChinaProject (2011CB610406) supported by the National Basic Research Program of China+2 种基金Project (B08040) supported by the 111 Project of ChinaProject (JC20100228) supported by Foundation for Fundamental Research of Northwestern Polytechnical University (NPU), ChinaProject (SKLSP201012) supported by the Research Fund of the State Key Laboratory of Solidification Processing (NPU), China
