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Frobenius代数的Segre积
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作者 马菀羚 何济位 《杭州师范大学学报(自然科学版)》 CAS 2023年第2期180-186,共7页
根据Segre积的定义,证明了两个Frobenius代数的Segre积仍然是Frobenius代数,并在此基础上研究了两个Frobenius代数Segre积对应的扭超势和Nakayama自同构.
关键词 FROBENIUS代数 segre 扭超势
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分次近似Frobenius代数的Segre积
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作者 励雨哲 俞晓岚 《杭州师范大学学报(自然科学版)》 CAS 2023年第3期290-295,共6页
文章主要研究分次近似Frobenius代数,提出了k-近似Frobenius代数的概念,证明了两个k-近似Frobenius代数的Segre积还是k-近似Frobenius代数,并且对分次近似Frobenius代数的Frobenius空间进行了直和分解.
关键词 分次近似Frobenius代数 segre Frobenius空间
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Projection on Segre varieties and determination of holomorphic mappings between real submanifolds Dedicated to Professor Sheng GONG on the occasion of his 75th birthday
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作者 BAOUENDI M S EBENFELT Peter ROTHSCHILD Linda P 《Science China Mathematics》 SCIE 2006年第11期1611-1624,共14页
It is shown that a germ of a holomorphic mapping sending a real-analytic generic submanifold of finite type into another is determined by its projection on the Segre variety of the target manifold. A necessary and suf... It is shown that a germ of a holomorphic mapping sending a real-analytic generic submanifold of finite type into another is determined by its projection on the Segre variety of the target manifold. A necessary and sufficient condition is given for a germ of a mapping into the Segre variety of the target manifold to be the projection of a holomorphic mapping sending the source manifold into the target. An application to the biholomorphic equivalence problem is also given. 展开更多
关键词 segre variety generic submanifold segre mappings finite type biholomorphic equivalence.
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Synergistic effect of total ionizing dose on single-event gate rupture in SiC power MOSFETs
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作者 曹荣幸 汪柯佳 +9 位作者 孟洋 李林欢 赵琳 韩丹 刘洋 郑澍 李红霞 蒋煜琪 曾祥华 薛玉雄 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第6期666-672,共7页
The synergistic effect of total ionizing dose(TID) and single event gate rupture(SEGR) in SiC power metal–oxide–semiconductor field effect transistors(MOSFETs) is investigated via simulation. The device is found to ... The synergistic effect of total ionizing dose(TID) and single event gate rupture(SEGR) in SiC power metal–oxide–semiconductor field effect transistors(MOSFETs) is investigated via simulation. The device is found to be more sensitive to SEGR with TID increasing, especially at higher temperature. The microscopic mechanism is revealed to be the increased trapped charges induced by TID and subsequent enhancement of electric field intensity inside the oxide layer. 展开更多
关键词 SiC power MOSFET total ionizing dose(TID) single event gate rupture(SEGR) synergistic effect TCAD simulation
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星用功率VDMOS器件SEGR效应研究 被引量:3
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作者 王立新 高博 +4 位作者 刘刚 韩郑生 张彦飞 宋李梅 吴海舟 《核技术》 CAS CSCD 北大核心 2012年第6期434-437,共4页
对源漏击穿电压为400 V和500 V的N沟功率VDMOS器件进行碘离子单粒子辐照实验,讨论了不同偏置下两种功率器件的SEGR效应。研究结果显示:栅源电压为0 V、漏源电压为击穿电压时,器件未发生单粒子效应,表明两种星用功率器件的抗单粒子效应... 对源漏击穿电压为400 V和500 V的N沟功率VDMOS器件进行碘离子单粒子辐照实验,讨论了不同偏置下两种功率器件的SEGR效应。研究结果显示:栅源电压为0 V、漏源电压为击穿电压时,器件未发生单粒子效应,表明两种星用功率器件的抗单粒子效应能力达到技术指标要求。 展开更多
关键词 功率VDMOS器件 SEGR效应 加速器 注量率
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用晶格Boltzmann方法研究微血管脉动流中悬浮颗粒运动特征的转变 被引量:2
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作者 邱冰 王立龙 +1 位作者 薛泽 李华兵 《广西师范大学学报(自然科学版)》 CAS 北大核心 2011年第4期7-11,共5页
用二维晶格Boltzmann方法研究球形刚性悬浮颗粒在微血管脉动流中的迁移运动。悬浮颗粒的直径与人体正常红细胞的尺寸相当,微血管的直径是颗粒直径的四倍,血浆被看作牛顿流体,粒子边界的流体作用力用压力张量积分法计算。模拟结果显示,... 用二维晶格Boltzmann方法研究球形刚性悬浮颗粒在微血管脉动流中的迁移运动。悬浮颗粒的直径与人体正常红细胞的尺寸相当,微血管的直径是颗粒直径的四倍,血浆被看作牛顿流体,粒子边界的流体作用力用压力张量积分法计算。模拟结果显示,当液体流速与正常血液流速相当时,Segré-Silberberg效应不会出现,只有当液体流速增大到一定数值时,Segré-Silberberg效应才得以呈现。在流速逐渐增大的过程中观察悬浮粒子平衡位置的变化情况,可以看到平衡位置的变化并非连续,而是显示出类似"量子化"的特征。这与宏观流体中的颗粒迁移运动特征有着显著区别,揭示了从微流动过渡到宏观流动的过程中流体动力学特征的演化过程。 展开更多
关键词 晶格Boltzmann方法 脉动流 微血管 Segré-Silberberg效应
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Lattice Boltzmann Simulation of One Particle Migrating in a Pulsating Flow in Microvessel
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作者 邱冰 谭惠丽 李华兵 《Communications in Theoretical Physics》 SCIE CAS CSCD 2011年第10期756-760,共5页
A lattice Boltzmann model of two dimensions is used to simulate the movement of a single rigid particle suspended in a pulsating flow in micro vessel The particle is as big as a red blood cell, and the micro vessel is... A lattice Boltzmann model of two dimensions is used to simulate the movement of a single rigid particle suspended in a pulsating flow in micro vessel The particle is as big as a red blood cell, and the micro vessel is four times as wide as the diameter of the particle. It is found that Segrd-Silberberg effect will not respond to the pulsation of the flow when the Reynolds number is relatively high. However, when the Reynolds number is low enough, Segrd-Silberberg effect disappears. In the steady flow, different initial position leads to different equilibrium positions. In a pulsating flow, different frequencies of pulsation also cause different equilibrium positions. Particularly, when the frequency of pulsation is closed to the human heart rate, Segrd-Silberberg effect presents again. The evolutions of velocity, rotation, and trajectory of the particle are investigated to find the dynamics of such abnormal phenomenon. 展开更多
关键词 segre Silberberg effect lattice Boltzmann method red blood cell pulsating flow
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基于MATLAB多自由度单向串联振动系统的计算分析
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作者 于翔 周松 《机械设计与制造工程》 2014年第9期62-65,共4页
在工程振动问题中,固有特性(固有频率和主振型)是描述振动系统的主要参数。根据矩阵迭代法,利用MATLAB/GUI界面设计平台,提出了针对多自由度单向串联振动系统固有特性的计算方法,并通过算例求解和误差分析,完成了合理性验证,为复杂振动... 在工程振动问题中,固有特性(固有频率和主振型)是描述振动系统的主要参数。根据矩阵迭代法,利用MATLAB/GUI界面设计平台,提出了针对多自由度单向串联振动系统固有特性的计算方法,并通过算例求解和误差分析,完成了合理性验证,为复杂振动系统响应的初步解耦奠定了基础。 展开更多
关键词 MATLAB 多自由度 振动系统 矩阵迭代法 固有特性
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Scaling effects of single-event gate rupture in thin oxides 被引量:2
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作者 丁李利 陈伟 +3 位作者 郭红霞 闫逸华 郭晓强 范如玉 《Chinese Physics B》 SCIE EI CAS CSCD 2013年第11期640-644,共5页
The dynamics of the excess carriers generated by incident heavy ions are considered in both SiO2 and Si substrate. Influences of the initial radius of the charge track, surface potential decrease, external electric fi... The dynamics of the excess carriers generated by incident heavy ions are considered in both SiO2 and Si substrate. Influences of the initial radius of the charge track, surface potential decrease, external electric field, and the LET value of the incident ion on internal electric field buildup are analyzed separately. Considering the mechanisms of recombination, impact ionization, and bandgap tunneling, models are verified by using published experimental data. Moreover, the scaling effects of single-event gate rupture in thin gate oxides are studied, with the feature size of the MOS device down to 90 nm. The walue of the total electric field decreases rapidly along with the decrease of oxide thickness in the first period (1 2 nm to 3.3 nm), and then increases a little when the gate oxide becomes thinner and thinner (3.3 nm to 1.8 nm). 展开更多
关键词 single-event gate rupture (SEGR) heavy ion thin oxides TCAD simulation
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高压VDMOS器件的研制及其抗辐照特性研究 被引量:2
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作者 张立荣 《电子与封装》 2013年第6期33-37,共5页
利用SILVACO工艺模拟软件和器件模拟软件以及L-Edit版图设计工具,我们对一款高压VDMOS功率器件进行了模拟仿真和优化设计。利用自主开发的VDMOS工艺流程完成了器件的实际流片。测试结果表明,器件的源漏击穿电压达到600 V以上,导通电阻小... 利用SILVACO工艺模拟软件和器件模拟软件以及L-Edit版图设计工具,我们对一款高压VDMOS功率器件进行了模拟仿真和优化设计。利用自主开发的VDMOS工艺流程完成了器件的实际流片。测试结果表明,器件的源漏击穿电压达到600 V以上,导通电阻小于2.5,跨导为4 S,栅-源泄漏电流约为±100 nA,零栅电压时的漏-源泄漏电流约为10μA,二极管正向压降约为1.2 V。采用二维器件模拟仿真工具以及相关物理模型对所研制的高压VDMOS器件的SEB和SEGR效应进行了分析,并通过对所研制的器件样片采用钴-60γ射线源进行辐照实验,研究了在一定剂量率、不同总剂量水平下辐照对所研制的高压VDMOS器件相关电学参数的影响。 展开更多
关键词 高压VDMOS 功率器件 SEB SEGR 辐照特性
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Lateral Migration and Nonuniform Rotation of Square Particle Suspended in Poiseuille Flow
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作者 Yong Ye Huajie Zhou +2 位作者 Sihao Zhou Zhangrong Qin Binghai Wen 《Journal of Flow Control, Measurement & Visualization》 2020年第3期146-158,共13页
A square particle suspended in a Poiseuille flow is investigated by using the lattice Boltzmann method with the Galilean-invariant momentum exchange method. The lateral migration of Segré-Silberberg effect is obs... A square particle suspended in a Poiseuille flow is investigated by using the lattice Boltzmann method with the Galilean-invariant momentum exchange method. The lateral migration of Segré-Silberberg effect is observed for the square particle, accompanied by the nonuniform rotation and regular wave. To compare with the circular particle, its circumscribed and inscribed squares are used in the simulations. Because the circumscribed square takes up a greater difference between the upper and lower flow rates, it reaches the equilibrium position earlier than the inscribed one. The trajectories of the latter are much closer to those of circle;this indicates that the circle and its inscribed square have a similar hydrodynamic radius in a Poiseuille flow. The equilibrium positions of the square particles change with Reynolds number and show a shape of saddle, whereas those of the circular particles are virtually not affected by Reynolds number. The regular wave and nonuniform rotation are owing to the interactions of the square shape and the parabolic velocity distribution of Poiseuille flow, and high Reynolds number makes the square rotating faster and decrease its oscillating amplitude. A series of contours illustrate the dynamic flow fields when the square particle has successive postures in a half rotating period. This study is beneficial to understand the motion of anisotropic particles and the dendrite growth in dynamic environment. 展开更多
关键词 Particle Suspension Square Particle Segré-Silberberg Effect Lattice Boltzmann Method
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Simulation of the sensitive region to SEGR in power MOSFETs
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作者 王立新 陆江 +4 位作者 刘刚 王春林 腾瑞 韩郑生 夏洋 《Journal of Semiconductors》 EI CAS CSCD 2012年第5期66-69,共4页
Single event gate rupture(SEGR) is a very important failure mode for power MOSFETs when used in aerospace applications,and the cell regions are widely considered to be the most sensitive to SEGR.However, experimenta... Single event gate rupture(SEGR) is a very important failure mode for power MOSFETs when used in aerospace applications,and the cell regions are widely considered to be the most sensitive to SEGR.However, experimental results show that SEGR can also happen in the gate bus regions.In this paper,we used simulation tools to estimate three structures in power MOSFETs,and found that if certain conditions are met,areas other than cell regions can become sensitive to SEGR.Finally,some proposals are given as to how to reduce SEGR in different regions. 展开更多
关键词 single event gate rupture SEGR heavy ion power MOSFET
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