An anodic TiO2/g-C3N4 hetero-junction and cathodic WO3/W were used to build a self-sustained catalytic fuel cell system for oxidizing rhodamine B or triclosan and reducing NO3^--N to N2 simultaneously.The WO3 nano-cat...An anodic TiO2/g-C3N4 hetero-junction and cathodic WO3/W were used to build a self-sustained catalytic fuel cell system for oxidizing rhodamine B or triclosan and reducing NO3^--N to N2 simultaneously.The WO3 nano-catalyst was formed in situ by heating and oxidizing a tungsten wire in air.Cyclic voltammetry and current-time curves were used to characterize the electrochemical properties of the electrodes and system.Aeration and activation of molecular oxygen by self-biased TiO2/g-C3N4 led to the formation of reactive oxidizing species in the fuel cell.The mechanism of simultaneous anodic oxidation of pollutants and cathodic reduction of nitrate was proposed.The spontaneously formed circuit and tiny current were used simultaneously in treating two kinds of wastewater in the reactor chambers,even without light illumination or an external applied voltage.This new catalytic pollution control route can lower energy consumption and degrade many other kinds of pollutants.展开更多
A single-pole four-throw(SP4T)RF switch with charge-pump-based controller is designed and implemented in a commercial 130-nm silicon-on-insulator(SOI)CMOS process.An improved body self-biasing technique based on diode...A single-pole four-throw(SP4T)RF switch with charge-pump-based controller is designed and implemented in a commercial 130-nm silicon-on-insulator(SOI)CMOS process.An improved body self-biasing technique based on diodes is utilized to simplify the controlling circuitry and improve the linearity.A multistack field-effect-transistor(FET)structure with body floating technique is employed to provide good power-handling capability.The proposed design demonstrates a measured input 0.1-d B compression point of 38.5 d Bm at 1.9 GHz,an insertion loss of 0.27 d B/0.33 d B and an isolation of 35 d B/27 d B at 900 MHz/1.9 GHz,respectively.The overall chip area is only 0.49 mm^2.This RF switch can be used in GSM/WCDMA/LTE frontend modules.展开更多
Strontium ferrites with different Bi2O3 content are prepared by the solid phase method, and their magnetic properties are investigated primarily. The Bi2O3 additive and sintering temperature separately exhibit a stron...Strontium ferrites with different Bi2O3 content are prepared by the solid phase method, and their magnetic properties are investigated primarily. The Bi2O3 additive and sintering temperature separately exhibit a strong effect on the sintering density, crystal structure, and magnetic properties of the ferrites. As to the ferrites with 3 wt% Bi2O3, the relatively high sintering density ρs, saturation magnetization Ms, and intrinsic coercivity HCi can be obtained at a low sintering temperature of 900℃ even much lower. Furthermore, the effective magnetic anisotropy constant Keff and magnetic anisotropy field Ha of the ferrites are calculated from the magnetization curve by the law of approach to saturation. It is suggested that the low-temperature sintered SrFe12O19 ferrites with Ms of 285.6 kA/m and Ha of 1564.6 kA/m possess a significant potentiality for applying in the self-biased low-temperature co-fired ceramics circulators from 34 to 40GHz.展开更多
In this work we report the measurement of the self-bias voltage of radiofrequency (RF) capacitevely coupled plasma, with a multihollow cathode and methane precursor, used for amorphous hydrogenated carbon (a- C:H) thi...In this work we report the measurement of the self-bias voltage of radiofrequency (RF) capacitevely coupled plasma, with a multihollow cathode and methane precursor, used for amorphous hydrogenated carbon (a- C:H) thin film deposition. The plasma is produced in the incident power and pressure ranges between 20 - 300 W and 10 - 100 mTorr, respectively. It was found that the self-bias voltage Vdc is a linear function of the square root of the incident power WRF. The relationship between the self-bias voltage and gas pressure P is established;this gives an empirical relation for (p/p0)y . From this result, the pressure p0 corresponding to the transition from hollow cathode effect to hollow cathode arc effect is determined.展开更多
A fully integrated 3GHz low-power and low-phase-noise voltage-controlled oscillator （VCO） with a self-biasing current source was implemented in a standard 0.18μm CMOS process. A trade-off between noise and power wa...A fully integrated 3GHz low-power and low-phase-noise voltage-controlled oscillator （VCO） with a self-biasing current source was implemented in a standard 0.18μm CMOS process. A trade-off between noise and power was realized through the optimization of the improved current source. The VCO can be tuned from 2.83 to 3.25GHz with a 13.8% tuning range. The measured phase noise at 1MHz offset is -111dBc/Hz at a frequency of 3.22GHz while the core circuit draws less than 2mA from a 1.8V supply voltage. These results make the circuit suitable for a 5GHz wireless local area network （WLAN） receiver and 3.4 to 3.6GHz world interoperability for microwave access （WiMAX） application.展开更多
A new low power, low phase jitter, compact realization, and sell-biased PLL, which is fabricated on SMIC 40 nm CMOS technology is introduced. The proposed self-biased PLL eliminates extra band gap biasing circuits, an...A new low power, low phase jitter, compact realization, and sell-biased PLL, which is fabricated on SMIC 40 nm CMOS technology is introduced. The proposed self-biased PLL eliminates extra band gap biasing circuits, and internally generates all the biasing voltages and currents. Meanwhile, all of the PLL dynamic loop parameters, such as loop bandwidth, natural frequency, damping factors are kept constant adaptively. By optimizing the circuit structures, the perfect unity of chip estate, power dissipation, phase jitter, and loop stability is achieved. THe PLL consumes 4.2 mW of power tinder 1.1 V/2.5 V voltage supply at 2.4 GHz VCO frequency, while occupying a die area of less than 0.02 mmz （180 × 110 μm2）, and the typical period jitter （RMS） is around 2.8 ps.展开更多
Fe BSi C metglas was annealed at an optimized condition（350 °C, 5 min） to achieve the mixed phases with pristine amorphous phase and crystallization phase.With such annealed metglas, a self-biased magnetoelect...Fe BSi C metglas was annealed at an optimized condition（350 °C, 5 min） to achieve the mixed phases with pristine amorphous phase and crystallization phase.With such annealed metglas, a self-biased magnetoelectric（ME） laminate of metglas/Pb（Zr, Ti）O3/metglas was fabricated. Without any external magnetic field, the composite exhibits the ME coefficient aE31 of 103 m V/（cm Oe） at1 k Hz and 15.5 V/（cm Oe） at electromechanical resonance frequency. The induced ME voltage shows a good linear relation to the applied AC magnetic field with amplitude as low as 10-7T at 1 k Hz. It is expected that such self-biased ME composites provide a practical application of economical and compact magnetic sensors.展开更多
基金supported by the National Natural Science Foundation of China (21177018, 21677025)the Program of Introducing Talents of Discipline to Universities (B13012)~~
文摘An anodic TiO2/g-C3N4 hetero-junction and cathodic WO3/W were used to build a self-sustained catalytic fuel cell system for oxidizing rhodamine B or triclosan and reducing NO3^--N to N2 simultaneously.The WO3 nano-catalyst was formed in situ by heating and oxidizing a tungsten wire in air.Cyclic voltammetry and current-time curves were used to characterize the electrochemical properties of the electrodes and system.Aeration and activation of molecular oxygen by self-biased TiO2/g-C3N4 led to the formation of reactive oxidizing species in the fuel cell.The mechanism of simultaneous anodic oxidation of pollutants and cathodic reduction of nitrate was proposed.The spontaneously formed circuit and tiny current were used simultaneously in treating two kinds of wastewater in the reactor chambers,even without light illumination or an external applied voltage.This new catalytic pollution control route can lower energy consumption and degrade many other kinds of pollutants.
文摘A single-pole four-throw(SP4T)RF switch with charge-pump-based controller is designed and implemented in a commercial 130-nm silicon-on-insulator(SOI)CMOS process.An improved body self-biasing technique based on diodes is utilized to simplify the controlling circuitry and improve the linearity.A multistack field-effect-transistor(FET)structure with body floating technique is employed to provide good power-handling capability.The proposed design demonstrates a measured input 0.1-d B compression point of 38.5 d Bm at 1.9 GHz,an insertion loss of 0.27 d B/0.33 d B and an isolation of 35 d B/27 d B at 900 MHz/1.9 GHz,respectively.The overall chip area is only 0.49 mm^2.This RF switch can be used in GSM/WCDMA/LTE frontend modules.
基金Supported by the Scientific Research Foundation of Education Office of Sichuan Province under Grant No 13Z198the Young and Middle-aged Academic Leaders of Scientific Research Funds of Chengdu University of Information Technology under Grant No J201222
文摘Strontium ferrites with different Bi2O3 content are prepared by the solid phase method, and their magnetic properties are investigated primarily. The Bi2O3 additive and sintering temperature separately exhibit a strong effect on the sintering density, crystal structure, and magnetic properties of the ferrites. As to the ferrites with 3 wt% Bi2O3, the relatively high sintering density ρs, saturation magnetization Ms, and intrinsic coercivity HCi can be obtained at a low sintering temperature of 900℃ even much lower. Furthermore, the effective magnetic anisotropy constant Keff and magnetic anisotropy field Ha of the ferrites are calculated from the magnetization curve by the law of approach to saturation. It is suggested that the low-temperature sintered SrFe12O19 ferrites with Ms of 285.6 kA/m and Ha of 1564.6 kA/m possess a significant potentiality for applying in the self-biased low-temperature co-fired ceramics circulators from 34 to 40GHz.
文摘In this work we report the measurement of the self-bias voltage of radiofrequency (RF) capacitevely coupled plasma, with a multihollow cathode and methane precursor, used for amorphous hydrogenated carbon (a- C:H) thin film deposition. The plasma is produced in the incident power and pressure ranges between 20 - 300 W and 10 - 100 mTorr, respectively. It was found that the self-bias voltage Vdc is a linear function of the square root of the incident power WRF. The relationship between the self-bias voltage and gas pressure P is established;this gives an empirical relation for (p/p0)y . From this result, the pressure p0 corresponding to the transition from hollow cathode effect to hollow cathode arc effect is determined.
基金the National Natural Science Foundation of China(No.60276021)the State Key Development Program for Basic Research of China(No.G2002CB311901)~~
文摘A fully integrated 3GHz low-power and low-phase-noise voltage-controlled oscillator （VCO） with a self-biasing current source was implemented in a standard 0.18μm CMOS process. A trade-off between noise and power was realized through the optimization of the improved current source. The VCO can be tuned from 2.83 to 3.25GHz with a 13.8% tuning range. The measured phase noise at 1MHz offset is -111dBc/Hz at a frequency of 3.22GHz while the core circuit draws less than 2mA from a 1.8V supply voltage. These results make the circuit suitable for a 5GHz wireless local area network （WLAN） receiver and 3.4 to 3.6GHz world interoperability for microwave access （WiMAX） application.
文摘A new low power, low phase jitter, compact realization, and sell-biased PLL, which is fabricated on SMIC 40 nm CMOS technology is introduced. The proposed self-biased PLL eliminates extra band gap biasing circuits, and internally generates all the biasing voltages and currents. Meanwhile, all of the PLL dynamic loop parameters, such as loop bandwidth, natural frequency, damping factors are kept constant adaptively. By optimizing the circuit structures, the perfect unity of chip estate, power dissipation, phase jitter, and loop stability is achieved. THe PLL consumes 4.2 mW of power tinder 1.1 V/2.5 V voltage supply at 2.4 GHz VCO frequency, while occupying a die area of less than 0.02 mmz （180 × 110 μm2）, and the typical period jitter （RMS） is around 2.8 ps.
基金supported by the National Natural Science Foundation of China(51402164 and 51572142)
文摘Fe BSi C metglas was annealed at an optimized condition（350 °C, 5 min） to achieve the mixed phases with pristine amorphous phase and crystallization phase.With such annealed metglas, a self-biased magnetoelectric（ME） laminate of metglas/Pb（Zr, Ti）O3/metglas was fabricated. Without any external magnetic field, the composite exhibits the ME coefficient aE31 of 103 m V/（cm Oe） at1 k Hz and 15.5 V/（cm Oe） at electromechanical resonance frequency. The induced ME voltage shows a good linear relation to the applied AC magnetic field with amplitude as low as 10-7T at 1 k Hz. It is expected that such self-biased ME composites provide a practical application of economical and compact magnetic sensors.
