Metal-Halide Perovskite Submicrometer-Thick Films for Ultra-Stable Self-Powered Direct X-Ray Detectors

Metal-halide perovskites are revolutionizing the world of X-ray detectors,due to the development of sensitive,fast,and cost-effective devices.Self-powered operation,ensuring portability and low power consumption,has also been recently demonstrated in both bulk materials and thin films.However,the signal stability and repeatability under continuous X-ray exposure has only been tested up to a few hours,often reporting degradation of the detection performance.Here it is shown that self-powered direct X-ray detectors,fabricated starting from a FAPbBr_(3)submicrometer-thick film deposition onto a mesoporous TiO_(2)scaffold,can withstand a 26-day uninterrupted X-ray exposure with negligible signal loss,demonstrating ultra-high operational stability and excellent repeatability.No structural modification is observed after irradiation with a total ionizing dose of almost 200 Gy,revealing an unexpectedly high radiation hardness for a metal-halide perovskite thin film.In addition,trap-assisted photoconductive gain enabled the device to achieve a record bulk sensitivity of 7.28 C Gy^(−1)cm^(−3)at 0 V,an unprecedented value in the field of thin-film-based photoconductors and photodiodes for“hard”X-rays.Finally,prototypal validation under the X-ray beam produced by a medical linear accelerator for cancer treatment is also introduced.

High-speed performance self-powered short wave ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)

High-speed solar-blind short wavelength ultraviolet radiation detectors based onκ(ε)-Ga_(2)O_(3)layers with Pt contacts were demonstrated and their properties were studied in detail.Theκ(ε)-Ga_(2)O_(3)layers were deposited by the halide vapor phase epitaxy on patterned GaN templates with sapphire substrates.The spectral dependencies of the photoelectric properties of struc-tures were analyzed in the wavelength interval 200-370 nm.The maximum photo to dark current ratio,responsivity,detectiv-ity and external quantum efficiency of structures were determined as:180.86 arb.un.,3.57 A/W,1.78×10^(12) Hz^(0.5)∙cm·W^(-1) and 2193.6%,respectively,at a wavelength of 200 nm and an applied voltage of 1 V.The enhancement of the photoresponse was caused by the decrease in the Schottky barrier at the Pt/κ(ε)-Ga_(2)O_(3)interface under ultraviolet exposure.The detectors demon-strated could functionalize in self-powered mode due to built-in electric field at the Pt/κ(ε)-Ga_(2)O_(3)interface.The responsivity and external quantum efficiency of the structures at a wavelength of 254 nm and zero applied voltage were 0.9 mA/W and 0.46%,respectively.The rise and decay times in self-powered mode did not exceed 100 ms.

Self-powered UVC detectors based on α-Ga_(2)O_(3) with enchanted speed performance

Detectors were developed for detecting irradiation in the short-wavelength ultraviolet(UVC)interval using high-quality single-crystallineα-Ga_(2)O_(3) films with Pt interdigital contacts.The films ofα-Ga_(2)O_(3) were grown on planar sapphire substrates with c-plane orientation using halide vapor phase epitaxy.The spectral dependencies of the photo to dark current ratio,responsivity,external quantum efficiency and detectivity of the structures were investigated in the wavelength interval of 200−370 nm.The maximum of photo to dark current ratio,responsivity,external quantum efficiency,and detectivity of the structures were 1.16×10^(4) arb.un.,30.6 A/W,1.65×10^(4)%,and 6.95×10^(15) Hz^(0.5)·cm/W at a wavelength of 230 nm and an applied voltage of 1 V.The high values of photoelectric properties were due to the internal enhancement of the photoresponse associated with strong hole trapping.Theα-Ga_(2)O_(3) film-based UVC detectors can function in self-powered operation mode due to the built-in electric field at the Pt/α-Ga_(2)O_(3) interfaces.At a wavelength of 254 nm and zero applied voltage,the structures exhibit a responsivity of 0.13 mA/W and an external quantum efficiency of 6.2×10^(−2)%.The UVC detectors based on theα-Ga_(2)O_(3) films demonstrate high-speed performance with a rise time of 18 ms in self-powered mode.

CuO–TiO_(2) based self-powered broad band photodetector

An efficient room-temperature self-powered,broadband(300 nm–1100 nm)photodetector based on a CuO–TiO_(2)/TiO_(2)/p-Si(100)heterostructure is demonstrated.The CuO–TiO_(2)nanocomposites were grown in a two-zone horizontal tube furnace on a 40 nm TiO_(2)thin film deposited on a p-type Si(100)substrate.The CuO–TiO_(2)/TiO_(2)/p-Si(100)devices exhibited excellent rectification characteristics under dark and individual photoillumination conditions.The devices showed remarkable photo-response under broadband(300–1100 nm)light illumination at zero bias voltage,indicating the achievement of highly sensitive self-powered photodetectors at visible and near-infrared light illuminations.The maximum response of the devices is observed at 300 nm for an illumination power of 10 W.The response and recovery times were calculated as 86 ms and 78 ms,respectively.Moreover,under a small bias,the devices showed a prompt binary response by altering the current from positive to negative under illumination conditions.The main reason behind this binary response is the low turn-on voltage and photovoltaic characteristics of the devices.Under illumination conditions,the generation of photocurrent is due to the separation of photogenerated electron-hole pairs within the built-in electric field at the CuO–TiO_(2)/TiO_(2)interface.These characteristics make the CuO–TiO_(2)/TiO_(2)broadband photodetectors suitable for applications that require high response speeds and self-sufficient functionality.

Organic bulk heterojunction enabled with nanocapsules of hydrate vanadium pentaoxide layer for high responsivity self-powered photodetector

This article demonstrates the fabrication of organic-based devices using a low-cost solution-processable technique.A blended heterojunction of chlorine substituted 2D-conjugated polymer PBDB-T-2Cl,and PC71BM supported nanocapsules hy-drate vanadium penta oxides(HVO)as hole transport layer(HTL)based photodetector fabricated on an ITO coated glass sub-strate under ambient condition.The device forms an excellent organic junction diode with a good rectification ratio of~200.The device has also shown excellent photodetection properties under photoconductive mode(at reverse bias)and zero bias for green light wavelength.A very high responsivity of~6500 mA/W and high external quantum efficiency(EQE)of 1400%have been reported in the article.The proposed organic photodetector exhibits an excellent response and recovery time of~30 and~40 ms,respectively.

Twin model-based fault detection and tolerance approach for in-core self-powered neutron detectors

The in-core self-powered neutron detector(SPND)acts as a key measuring device for the monitoring of parameters and evaluation of the operating conditions of nuclear reactors.Prompt detection and tolerance of faulty SPNDs are indispensable for reliable reactor management.To completely extract the correlated state information of SPNDs,we constructed a twin model based on a generalized regression neural network(GRNN)that represents the common relationships among overall signals.Faulty SPNDs were determined because of the functional concordance of the twin model and real monitoring sys-tems,which calculated the error probability distribution between the model outputs and real values.Fault detection follows a tolerance phase to reinforce the stability of the twin model in the case of massive failures.A weighted K-nearest neighbor model was employed to reasonably reconstruct the values of the faulty signals and guarantee data purity.The experimental evaluation of the proposed method showed promising results,with excellent output consistency and high detection accuracy for both single-and multiple-point faulty SPNDs.For unexpected excessive failures,the proposed tolerance approach can efficiently repair fault behaviors and enhance the prediction performance of the twin model.

Self-powered circularly polarized light detector based on asymmetric chiral metamaterials

Circularly polarized light(CPL)has been given great attention because of its extensive application.While several devices for CPL detection have been studied,their performance is affected by the magnitude of photocurrent.In this paper,a self-powered photodetector based on hot electrons in chiral metamaterials is proposed and optimized.CPL can be distinguished by the direction of photocurrent without external bias owing to the interdigital electrodes with asymmetric chiral metamaterials.Distinguished by the direction of photocurrent,the device can easily detect the rotation direction of the CPL electric field,even if it only has a very weak responsivity.The responsivity of the proposed detector is near 1.9 mA/W at the wavelength of 1322 nm,which is enough to distinguish CPL.The detector we proposed has the potential for application in optical communication.

Self-healing wearable self-powered deep ultraviolet photodetectors based on Ga_(2)O_(3)

Gallium oxide(Ga_(2)O_(3))based flexible heterojunction type deep ultraviolet(UV)photodetectors show excellent solar-blind photoelectric performance,even when not powered,which makes them ideal for use in intelligent wearable devices.How-ever,traditional flexible photodetectors are prone to damage during use due to poor toughness,which reduces the service life of these devices.Self-healing hydrogels have been demonstrated to have the ability to repair damage and their combination with Ga_(2)O_(3) could potentially improve the lifetime of the flexible photodetectors while maintaining their performance.Herein,a novel self-healing and self-powered flexible photodetector has been constructed onto the hydrogel substrate,which exhibits an excellent responsivity of 0.24 mA/W under 254 nm UV light at zero bias due to the built-in electric field originating from the PEDOT:PSS/Ga_(2)O_(3) heterojunction.The self-healing of the Ga_(2)O_(3) based photodetector was enabled by the reversible property of the synthesis of agarose and polyvinyl alcohol double network,which allows the photodetector to recover its original configu-ration and function after damage.After self-healing,the photocurrent of the photodetector decreases from 1.23 to 1.21μA,while the dark current rises from 0.95 to 0.97μA,with a barely unchanged of photoresponse speed.Such a remarkable recov-ery capability and the photodetector’s superior photoelectric performance not only significantly enhance a device lifespan but also present new possibilities to develop wearable and intelligent electronics in the future.

A self-powered sensitive ultraviolet photodetector based on epitaxial graphene on silicon carbide

A self-powered graphene-based photodetector with high performance is particularly useful for device miniaturization and to save energy.Here,we report a graphene/silicon carbide（SiC）-based self-powered ultraviolet photodetector that exhibits a current responsivity of 7.4 m A/W with a response frequency of over a megahertz under 325-nm laser irradiation.The built-in photovoltage of the photodetector is about four orders of magnitude higher than previously reported results for similar devices.These favorable properties are ascribed to the ingenious device design using the combined advantages of graphene and SiC,two terminal electrodes,and asymmetric light irradiation on one of the electrodes.Importantly,the photon energy is larger than the band gap of SiC.This self-powered photodetector is compatible with modern semiconductor technology and shows potential for applications in ultraviolet imaging and graphene-based integrated circuits.

A broadband self-powered UV photodetector of aβ-Ga2O3/γ-CuI p–n junction

The symmetric Ti/Au bi-layer point electrodes have been successfully patterned on theβ-Ga;O;films which are prepared by metal–organic chemical vapor deposition(MOCVD)and theγ-Cu I films which are prepared by spin-coating.The fabricated heterojunction has a large open circuit voltage(Voc)of 0.69 V,desired for achieving self-powered operation of a photodetector.Irradiated by 254-nm ultraviolet(UV)light,when the bias voltage is-5 V,the dark current(Idark)of the device is 0.47 p A,the photocurrent(Iphoto)is-50.93 n A,and the photo-to-dark current ratio(Iphoto/Idark)reaches about 1.08×10;.The device has a stable and fast response speed in different wavelengths,the rise time(τr)and decay time(τd)are 0.762 s and 1.741 s under 254-nm UV light illumination,respectively.While theτr andτd are 10.709 s and7.241 s under 365-nm UV light illumination,respectively.The time-dependent(I–t)response(photocurrent in the order of10-10 A)can be clearly distinguished at a small light intensity of 1μW·cm;.The internal physical mechanism affecting the device performances is discussed by the band diagram and charge carrier transfer theory.

Wearable Triboelectric Nanogenerators Based on Printed Polyvinylidene Fluoride Films Incorporated with Cobalt-Based Metal-Organic Framework for Self-Powered Mobile Electronics

In this study,wearable triboelectric nanogenerators comprising bar-printed polyvinylidene fluoride(PVDF)films incorporated with cobalt-based metal-organic framework(Co-MOF)were developed.The enhanced output performance of the TENGs was attributed to the phase transition of PVDF from a-crystals toβ-crystals,as facilitated by the incorporation of the MOF.The synthesis conditions,including metal ion,concentration,and particle size of the MOF,were optimized to increase open-circuit voltage(VOC)and open-circuit current(I_(SC))of PVDF-based TENGs.In addition to high operational stability,mechanical robustness,and long-term reliability,the developed TENG consisting of PVDF incorporated with Co-MOF(Co-MOF@PVDF)achieved a VOC of 194 V and an I_(SC)of 18.8μA.Furthermore,the feasibility of self-powered mobile electronics was demonstrated by integrating the developed wearable TENG with rectifier and control units to power a global positioning system(GPS)device.The local position of the user in real-time through GPS was displayed on a mobile interface,powered by the battery charged through friction-induced electricity generation.

A self-powered ultraviolet photodetector based on a Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction with low noise and stable photoresponse

A self-powered solar-blind ultraviolet(UV)photodetector(PD)was successfully constructed on a Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction,which was fabricated by spin-coating the hydrothermally grown Bi_(2)WO_(6)onto MOCVD-grown Ga_(2)O_(3)film.The results show that a typical type-I heterojunction is formed at the interface of the Ga_(2)O_(3)film and clustered Bi_(2)WO_(6),which demonstrates a distinct photovoltaic effect with an open-circuit voltage of 0.18 V under the irradiation of 254 nm UV light.Moreover,the Ga_(2)O_(3)/Bi_(2)WO_(6)PD displays excellent photodetection performance with an ultra-low dark current of~6 fA,and a high light-to-dark current ratio(PDCR)of 3.5 x 10^(4)in self-powered mode(0 V),as well as a best responsivity result of 2.21 mA/W in power supply mode(5 V).Furthermore,the PD possesses a stable and fast response speed under different light intensities and voltages.At zero voltage,the PD exhibits a fast rise time of 132 ms and 162 ms,as well as a quick decay time of 69 ms and 522 ms,respectively.In general,the newly attempted Ga_(2)O_(3)/Bi_(2)WO_(6)heterojunction may become a potential candidate for the realization of self-powered and high-performance UV photodetectors.

Wafer‑Scale Vertical 1D GaN Nanorods/2D MoS_(2)/PEDOT:PSS for Piezophototronic Effect‑Enhanced Self‑Powered Flexible Photodetectors

van der Waals(vdW)heterostructures constructed by lowdimensional(0D,1D,and 2D)materials are emerging as one of the most appealing systems in next-generation flexible photodetection.Currently,hand-stacked vdW-type photodetectors are not compatible with large-areaarray fabrication and show unimpressive performance in self-powered mode.Herein,vertical 1D GaN nanorods arrays(NRAs)/2D MoS_(2)/PEDOT:PSS in wafer scale have been proposed for self-powered flexible photodetectors arrays firstly.The as-integrated device without external bias under weak UV illumination exhibits a competitive responsivity of 1.47 A W^(−1)and a high detectivity of 1.2×10^(11)Jones,as well as a fast response speed of 54/71μs,thanks to the strong light absorption of GaN NRAs and the efficient photogenerated carrier separation in type-II heterojunction.Notably,the strain-tunable photodetection performances of device have been demonstrated.Impressively,the device at−0.78%strain and zero bias reveals a significantly enhanced photoresponse with a responsivity of 2.47 A W^(−1),a detectivity of 2.6×10^(11)Jones,and response times of 40/45μs,which are superior to the state-of-the-art self-powered flexible photodetectors.This work presents a valuable avenue to prepare tunable vdWs heterostructures for self-powered flexible photodetection,which performs well in flexible sensors.

Performance optimization of self-powered visible photodetectors based on Cu2O/electrolyte heterojunctions

The performance of the self-powered photodetectors based on the Cu2O/electrolyte heterojunctions is optimized by adjusting morphology and structure of the Cu2O film.The Cu2O film with a deposition time of 2000 s possesses a largest current density of 559.6μA/cm2 under visible light illumination at zero bias,with a rising time of 5.2 ms and a recovering time of 9.0 ms.This optimized Cu2O film has a highest responsivity of about 25.8 mA/W for visible light,and a negligible responsivity for UV light.The high crystallinity and excellent charge transfer property are responsible for the improved photodetection performance.

High performance Cu2O film/ZnO nanowires self-powered photodetector by electrochemical deposition

Self-powered photodetectors based on nanomaterials have attracted lots of attention for several years due to their various advantages.In this paper,we report a high performance Cu2O/ZnO self-powered photodetector fabricated by using electrochemical deposition.ZnO nanowires arrays grown on indium-tin-oxide glass are immersed in Cu2O film to construct type-Ⅱband structure.The Cu2O/ZnO photodetector exhibits a responsivity of 0.288 mA/W at 596 nm without bias.Compared with Cu2O photoconductive detector,the responsivity of the Cu2O/ZnO self-powered photodetector is enhanced by about two times at 2 V bias.It is attributed to the high power conversion efficiency and the efficient separation of the photogenerated electron-hole pairs,which are provided by the heterojunction.The outstanding comprehensive performances make the Cu2O film/ZnO nanowires self-powered photodetector have great potential applications.

A fast-response self-powered UV–Vis–NIR broadband photodetector based on a AgIn_(5)Se_(8)/t-Se heterojunction

A type Ⅱ p–n heterojunction could improve the photodetection performance of a photodetector due to the excellent ability of carrier separation. N-type AgIn_(5)Se_(8)(AIS) exhibits a large optical absorption coefficient, high optical conductivity and a suitable bandgap, and shows potential application in broadband photodetection. Even though our previous study on AgIn_(5)Se_(8)/FePSe_(3)obtained a good response speed, it still gave low responsivity due to the poor quality of the p-type FePSe_(3)thin film. Se, with a direct bandgap(around 1.7 eV), p-type conductivity, high electron mobility and high carrier density,is likely to form a low-dimensional structure, which leads to an increase in the effective contact area of the heterojunction and further improves the photodetector performance. In this work, continuous and dense t-Se thin film was prepared by electrochemical deposition. The self-powered AgIn5Se8/t-Se heterojunction photodetector exhibited a broadband detection range from 365 nm to 1200 nm. The responsivity and detectivity of the heterojunction photodetector were 32 μA/W and 1.8×109Jones, respectively, which are around 9 and 4 times higher than those of the AgIn_(5)Se_(8)/FePSe_(3)heterojunction photodetector. The main reason for this is the good quality of the t-Se thin film and the formation of the low-dimensional t-Se nanoribbons, which optimized the transport pathway of carriers. The results indicate that the AgIn_(5)Se_(8)/t-Se heterojunction is an excellent candidate for broadband and self-powered photoelectronic devices.

High-performance omnidirectional self-powered photodetector constructed by CsSnBr_(3)/ITO heterostructure film

Omnidirectional photodetectors attract enormous attention due to their prominent roles in optical tracking systems and omnidirectional cameras.However,it is still a challenge for the construction of high-performance omnidirectional photodetectors where the incident light can be effectively absorbed in multiple directions and the photo-generated carriers can be effectively collected.Here,a high-performance omnidirectional self-powered photodetector based on the CsSnBr_(3)/indium tin oxide(ITO)heterostructure film was designed and demonstrated.The as-fabricated photodetector exhibited an excellent self-powered photodetection performance,showing responsivity and detectivity up to 35.1 mA/W and 1.82×10^(10) Jones,respectively,along with the smart rise/decay response time of 4 ms/9 ms.Benefitting from the excellent photoelectric properties of the CsSnBr_(3) film as well as the ability of the CsSnBr_(3)/ITO heterostructure to efficiently separate and collect photo-generated carriers,the as-fabricated photodetector also exhibited an excellent omnidirectional self-powered photodetection performance.All the results have certified that this work finds an efficient way to realize high-performance omnidirectional self-powered photodetectors.

Self-Powered Implantable Skin-Like Glucometer for Real-Time Detection of Blood Glucose Level In Vivo

Implantable bioelectronics for analyzing physiological biomarkers has recently been recognized as a promising technique in medical treatment or diagnostics. In this study, we developed a self-powered implantable skinlike glucometer for real-time detection of blood glucose level in vivo. Based on the piezo-enzymatic-reaction coupling effect of GOx@ZnO nanowire, the device under an applied deformation can actively output piezoelectric signal containing the glucose-detecting information. No external electricity power source or battery is needed for this device, and the outputting piezoelectric voltage acts as both the biosensing signal and electricity power. A practical application of the skin-like glucometer implanted in mouse body for detecting blood glucose level has been simply demonstrated. These results provide a new technique path for diabetes prophylaxis and treatment.

Nanogenerators for Self-Powered Gas Sensing

Looking toward world technology trends over the next few decades, self-powered sensing networks are a key field of technological and economic driver for global industries. Since 2006, Zhong Lin Wang's group has proposed a novel concept of nanogenerators(NGs), including piezoelectric nanogenerator and triboelectric nanogenerator, which could convert a mechanical trigger into an electric output. Considering motion ubiquitously exists in the surrounding environment and for any most common materials used every day, NGs could be inherently served as an energy source for our daily increasing requirements or as one of self-powered environmental sensors. In this regard, by coupling the piezoelectric or triboelectric properties with semiconducting gas sensing characterization, a new research field of self-powered gas sensing has been proposed. Recent works have shown promising concept to realize NG-based self-powered gas sensors that are capable of detecting gas environment without the need of external power sources to activate the gas sensors or to actively generate a readout signal. Compared with conventional sensors, these self-powered gas sensors keep the approximate performance.Meanwhile, these sensors drastically reduce power consumption and additionally reduce the required space for integration,which are significantly suitable for the wearable devices. This paper gives a brief summary about the establishment and latest progress in the fundamental principle, updated progress and potential applications of NG-based self-powered gas sensing system. The development trend in this field is envisaged, and the basic configurations are also introduced.

Electrospinning of Flexible Poly(vinyl alcohol)/MXene Nanofiber-Based Humidity Sensor Self-Powered by Monolayer Molybdenum Diselenide Piezoelectric Nanogenerator

Two-dimensional material has been widely investigated for potential applications in sensor and flexible electronics.In this work,a self-powered flexible humidity sensing device based on poly(vinyl alcohol)/Ti_(3)C_(2)Tx(PVA/MXene)nanofibers film and monolayer molybdenum diselenide(MoSe2)piezoelectric nanogenerator(PENG)was reported for the first time.The monolayer MoSe_(2)-based PENG was fabricated by atmospheric pressure chemical vapor deposition techniques,which can generate a peak output of 35 mV and a power density of42 mW m^(-2).The flexible PENG integrated on polyethylene terephthalate(PET)substrate can harvest energy generated by different parts of human body and exhibit great application prospects in wearable devices.The electrospinned PVA/MXene nanofiber-based humidity sensor with flexible PET substrate under the driven of monolayer MoSe_(2) PENG,shows high response of~40,fast response/recovery time of 0.9/6.3 s,low hysteresis of 1.8%and excellent repeatability.The self-powered flexible humidity sensor yields the capability of detecting human skin moisture and ambient humidity.This work provides a pathway to explore the high-performance humidity sensor integrated with PENG for the self-powered flexible electronic devices.