SEMICONDUCTING PROPERTIES OF In_2O_3 ANODIC FILM

The good potentiality of the In_2O_3 anodic film as a photoanodic material has been demonstrated.The anodic oxidation of In substrate in alkaline solution for obtaining In_2O_3 film has been developed and their semiconducting properties have been investigated through capacitance, photoelectrochemistry and electroreflection measurements.

Effect of Chloride on Semiconducting Properties of Passive Films Formed on Supermartensitic Stainless Steel in NaHCO_3 Solution

The effects of chloride ion on the electrochemical behavior and the semiconducting properties of the passive film on supermartensitic stainless steel in 0.5 mol/L NaHCO_3 solution were investigated using potentiodynamic polarization, the potentiostatic current transients and Mott-Schottky analysis. The results indicated that chloride ion narrowed passivation region and improved pitting susceptibility. The steady state current densities were independent of film-formed potentials, which was in good agreement with the assumption of the point defect model （PDM）. The capacitance results showed the fact that the passive films had a multilayer character. The defect density decreased with increasing passive film formation potential. The chloride ion induced changes of the acceptor densities and donor densities of the passive films.

Orientation and mobility control of 4HCB organic film for flexible X-ray detectors with high performance

In comparison to inorganic counterparts,organic semiconducting(OSC)crystalline films are promising for building large-area and flexible ionizing radiation detectors for X-ray imaging or dosimetry due to their tissue equivalence,simple processing and large-scale production accessibility.Fabrication processes,how-ever,hinder the ability to generate aligned and large-area films with high carrier mobility.In this work,the space-confined melt process is used to produce highly orientated 4HCB(4-hydroxycyanobenzene)OSC films with a large area of 15×18 mm^(2).The out-of-plane direction of the 4HCB film is<001>,and the benzene rings are found to be extensively overlapped inside the in-plane direction,according to the XRD patterns.The film exhibits a high resistivity up to 1012cm,and high hole mobility of 10.62 cm^(2)V^(−1)s^(−1).Furthermore,the 4HCB(80μm-thick film)based X-ray detectors can achieve a sensitivity of 93μC Gy air^(−1) cm^(−2)and on/offratio of 157.The device also shows steady flexibility,with no degradation in detecting function after 100 cycles of bending.Finally,the proposed 4HCB film detectors demonstrated a high-resolution X-ray imaging capability.The imaging of several materials with sharp edges(copper and polytetrafluoroethylene)has been obtained.This work has developed a fast but efficient approach for producing large-area,highly oriented OSC films for high-performance X-ray detectors.

Recent progress of photodetector based on carbon nanotube film and application in optoelectronic integration

Due to its remarkable electrical and optical capabilities,optoelectronic devices based on the semiconducting single-walled carbon nanotube(s-SWCNT)have been studied extensively in the last two decades.First,s-SWCNT is a direct bandgap semiconductor with a high infrared absorption coefficient and high electron/hole mobility.In addition,as a typical one-dimensional material,there is no lattice mismatch between s-SWCNT and any substrates.Another advantage is that the optoelectronic devices of s-SWCNT can be processed at low temperatures.s-SWCNT has intriguing potential and applications in solar cells,light-emitting diodes(LEDs),photodetectors,and three-dimensional(3D)optoelectronic integration.In recent years,along with the advancement of solution purification technology,the high-purity s-SWCNTs film has laid the foundation for constructing large-area,homogenous,and high-performance optoelectronic devices.In this review,optoelectronic devices based on s-SWCNTs film and related topics are reviewed,including the preparation of high purity s-SWCNTs film,the progress of photodetectors based on the s-SWCNTs film,and challenges of s-SWCNTs film photodetectors.

Determining polymer film thickness during manufacturing with broadband transmission

A novel broadband transmission method to determine polymer film thickness during manufacturing is pro- posed, and a measurement system is developed based on this method. The relationship between broadband optical power and film thickness is deduced according to the Lambert-Beer law. The system is composed of a halogen light and an optical power meter. Results show that the measurement error of this method is approximately 1 tim, and the resolution of the system is below 0.4 μm for polymer films with less than 100-μm thickness.