Synchronization for multiple-pulse at nanosecond range shows a great value on the power multiplication and synchronous electric fieldsapplications. Nanosecond or sub-ns jitter synchronization is essential for the impr...Synchronization for multiple-pulse at nanosecond range shows a great value on the power multiplication and synchronous electric fieldsapplications. Nanosecond or sub-ns jitter synchronization is essential for the improved working efficiency of the large amounts of pulse modulesand accurate requirements for the power coherent combining applications. This paper presents a trigger generator based on a laser diodetriggered GaAs photoconductive semiconductor switch (PCSS) with low jitter and compact size characteristics. It avoids the high currentsthat are harmful to high-gain mode PCSSs. In the trigger circuit, a 200 pF capacitor is charged by a microsecond-scale 18 kV pulse and thendischarged via the high-gain mode GaAs PCSS to trigger the high-power trigatron switch. When triggered by the ~10 ns pulse generated by thePCSS, the DC-charged trigatron can operate in the 20e35 kV range with 10 ns rise time and 1 ns delay-time jitter.展开更多
An experimental study of leakage current is presented in a semi-insulating(SI) Ga As photoconductive semiconductor switch(PCSS) with voltages up to 5.8 kV(average field is 19.3 kV/cm). The leakage current increa...An experimental study of leakage current is presented in a semi-insulating(SI) Ga As photoconductive semiconductor switch(PCSS) with voltages up to 5.8 kV(average field is 19.3 kV/cm). The leakage current increases nonlinearly with the bias voltage increasing from 1.2×10^-9 A to 3.6×10^-5A. Furthermore, the dark resistance, which is characterized as a function of electric field, does not monotonically decrease with the field but displays several distinct regimes. By eliminating the field-dependent drift velocity, the free-electron density n is extracted from the current, and then the critical field for each region of n(E) characteristic of PCSS is obtained. It must be the electric field that provides the free electron with sufficient energy to activate the carrier in the trapped state via multiple physical mechanisms, such as impurity ionization, fielddependent EL2 capture, and impact ionization of donor centers EL10 and EL2. The critical fields calculated from the activation energy of these physical processes accord well with the experimental results. Moreover, agreement between the fitting curve and experimental data of J(E), further confirms that the dark-state characteristics are related to these field-dependent processes. The effects of voltage on SI-Ga As PCSS may give us an insight into its physical mechanism.展开更多
High power switch is one of the most important components in pulsed power technology. The RSD (Reversely Switched Dynistor), turned on by a thin layer of an electron-hole plasma, is a high power semiconductor switch...High power switch is one of the most important components in pulsed power technology. The RSD (Reversely Switched Dynistor), turned on by a thin layer of an electron-hole plasma, is a high power semiconductor switch. In this study, the RSD turn-on conditions were investigated by numerical analysis and device simulation as well as the experiments conducted to validate the turn-on conditions. A design of a triggering high-voltage RSD is presented based on a saturable transformer.展开更多
Al-doped ZnO thin film (AZO) is used as a subcontact layer in 6H-SiC photoconductive semiconductor switches (PCSSs) to reduce the on-state resistance and optimize the device structure. Our photoconductive test sho...Al-doped ZnO thin film (AZO) is used as a subcontact layer in 6H-SiC photoconductive semiconductor switches (PCSSs) to reduce the on-state resistance and optimize the device structure. Our photoconductive test shows that the onstate resistance of lateral PCSS with an n+-AZO subcontact layer is 14.7% lower than that of PCSS without an n+-AZO subcontact layer. This occurs because a heavy-doped AZO thin film can improve Ohmic contact properties, reduce contact resistance, and alleviate Joule heating. Combined with the high transparance characteristic at 532 nm of AZO film, vertical structural PCSS devices are designed and their structural superiority is discussed. This paper provides a feasible route for fabricating high performance SiC PCSS by using conductive and transparent ZnO-based materials.展开更多
Breakdown characteristics of a gap breakdown load was investigated in this paper, and a reversely switched dynistor (RSD) discharge circuit was designed based on the load. Based on the characteristics of the load, t...Breakdown characteristics of a gap breakdown load was investigated in this paper, and a reversely switched dynistor (RSD) discharge circuit was designed based on the load. Based on the characteristics of the load, the RSD discharge circuit was improved and optimized. The volume of the magnetic switch was reduced. To protect the thyristor and RSD, a diode was anti- parallely connected with the thyristor, which reduced the time requirement when a power voltage was applied to RSD. Experimental results show the circuit designed in this paper can switch a high voltage and high current smoothly, and allows the power voltage to change in a wider range.展开更多
In traditional hybrid DC circuit breakers(HCBs)schemes,complex equipment is usually required to ensure current commutation from mechanical to semiconductor switches,which cause not only additional construction costs a...In traditional hybrid DC circuit breakers(HCBs)schemes,complex equipment is usually required to ensure current commutation from mechanical to semiconductor switches,which cause not only additional construction costs and volume but also additional losses and maintenance work.Different from this condition,a low-loss and compact HCB scheme that does not use separate current commutation equipment is proposed in this study.By rationally using the charge and discharge of the snubber capacitor,the self-commutated semiconductor switch(SCS)module can integrate both the current commutation and shutdown functions,thereby greatly reducing cost and volume.The working process is discussed and analyzed in detail,and then a 10-kA prototype is developed and tested,which verifies the feasibility and effectiveness of the proposed scheme.Index Terms-HVDC circuit breakers,hybrid DC circuit breakers(HCBs),self-commutated semiconductor switch(SCS).展开更多
Photoconductive semiconductor switches (PCSSs) are widely used in high power ultra-wideband source applications and precise synchronization control due to their high power low-jitter high-repetition-frequency. In th...Photoconductive semiconductor switches (PCSSs) are widely used in high power ultra-wideband source applications and precise synchronization control due to their high power low-jitter high-repetition-frequency. In this letter, a 14-mm gap semi-insulating GaAs PCSS biased under 20 kV is triggered by a 1064-nm laser with a repetition frequency of 30 Hz. Although the trigger condition is greater than the threshold of the lock-on effect, the high gain mode is not observed. The results indicate that the high gain mode of the PCSS is quenched by decreasing the remnant voltage of pulsed energy storage capacitor.展开更多
Experiments with the limited space-charge accumulation(LSA) mode of oscillation in a large gap semiinsulating (SI) GaAs photoconductive semiconductor switch(PCSS) are discussed.It has been observed that growth a...Experiments with the limited space-charge accumulation(LSA) mode of oscillation in a large gap semiinsulating (SI) GaAs photoconductive semiconductor switch(PCSS) are discussed.It has been observed that growth and drift of a photo-activated charge domain(PACD) are quenched only when the bias voltage is more than twice the threshold voltage.The original negative resistance characteristics are directly utilized in the LSA mode;during LSA operation the spatial average of the electric field varies over a large portion of the negative differential mobility region of the velocity-electric field characteristic.The work efficiency of an SI GaAs PCSS is remarkably enhanced by electric field excursions into the positive resistance region when the total electric field is only below the threshold part of the time.The LSA mode can only operate in the certain conditions that satisfy the quenching of the accumulation layer and the smaller initial domain voltage.展开更多
基金This work was supported by the National Science Foundation of China under grant No.51477177.
文摘Synchronization for multiple-pulse at nanosecond range shows a great value on the power multiplication and synchronous electric fieldsapplications. Nanosecond or sub-ns jitter synchronization is essential for the improved working efficiency of the large amounts of pulse modulesand accurate requirements for the power coherent combining applications. This paper presents a trigger generator based on a laser diodetriggered GaAs photoconductive semiconductor switch (PCSS) with low jitter and compact size characteristics. It avoids the high currentsthat are harmful to high-gain mode PCSSs. In the trigger circuit, a 200 pF capacitor is charged by a microsecond-scale 18 kV pulse and thendischarged via the high-gain mode GaAs PCSS to trigger the high-power trigatron switch. When triggered by the ~10 ns pulse generated by thePCSS, the DC-charged trigatron can operate in the 20e35 kV range with 10 ns rise time and 1 ns delay-time jitter.
基金supported by the National Natural Science Foundation of China(Grant No.31470822)the Advanced Research Foundation of China(Grant Nos.9140A05030114DZ02068,9140A07030514DZ02101,and 9140A07010715DZ02001)
文摘An experimental study of leakage current is presented in a semi-insulating(SI) Ga As photoconductive semiconductor switch(PCSS) with voltages up to 5.8 kV(average field is 19.3 kV/cm). The leakage current increases nonlinearly with the bias voltage increasing from 1.2×10^-9 A to 3.6×10^-5A. Furthermore, the dark resistance, which is characterized as a function of electric field, does not monotonically decrease with the field but displays several distinct regimes. By eliminating the field-dependent drift velocity, the free-electron density n is extracted from the current, and then the critical field for each region of n(E) characteristic of PCSS is obtained. It must be the electric field that provides the free electron with sufficient energy to activate the carrier in the trapped state via multiple physical mechanisms, such as impurity ionization, fielddependent EL2 capture, and impact ionization of donor centers EL10 and EL2. The critical fields calculated from the activation energy of these physical processes accord well with the experimental results. Moreover, agreement between the fitting curve and experimental data of J(E), further confirms that the dark-state characteristics are related to these field-dependent processes. The effects of voltage on SI-Ga As PCSS may give us an insight into its physical mechanism.
基金supported by the National Natural Science Foundation of China (Nos.50277016,50577028)Specialized Research Fund for the Doctoral Program of Higher Education (No.20050487044)
文摘High power switch is one of the most important components in pulsed power technology. The RSD (Reversely Switched Dynistor), turned on by a thin layer of an electron-hole plasma, is a high power semiconductor switch. In this study, the RSD turn-on conditions were investigated by numerical analysis and device simulation as well as the experiments conducted to validate the turn-on conditions. A design of a triggering high-voltage RSD is presented based on a saturable transformer.
基金Project supported by the Innovation Program of the Shanghai Institute of Ceramics(Grant No.Y39ZC1110G)the Innovation Program of the Chinese Academy of Sciences(Grant No.KJCX2-EW-W10)+3 种基金the Industry–Academic Joint Technological Innovations Fund Project of Jiangsu Province,China(Grant No.BY2011119)the Natural Science Foundation of Shanghai(Grant No.14ZR1419000)the Young Scientists Fund of the National Natural Science Foundation of China(Grant No.61404146)the National High-tech R&D Program of China(Grant Nos.2013AA031603 and 2014AA032602)
文摘Al-doped ZnO thin film (AZO) is used as a subcontact layer in 6H-SiC photoconductive semiconductor switches (PCSSs) to reduce the on-state resistance and optimize the device structure. Our photoconductive test shows that the onstate resistance of lateral PCSS with an n+-AZO subcontact layer is 14.7% lower than that of PCSS without an n+-AZO subcontact layer. This occurs because a heavy-doped AZO thin film can improve Ohmic contact properties, reduce contact resistance, and alleviate Joule heating. Combined with the high transparance characteristic at 532 nm of AZO film, vertical structural PCSS devices are designed and their structural superiority is discussed. This paper provides a feasible route for fabricating high performance SiC PCSS by using conductive and transparent ZnO-based materials.
基金supported by National Natural Science Foundation of China (No. 50907025)China Postdoctoral Science Foundation (No. 20080440931)
文摘Breakdown characteristics of a gap breakdown load was investigated in this paper, and a reversely switched dynistor (RSD) discharge circuit was designed based on the load. Based on the characteristics of the load, the RSD discharge circuit was improved and optimized. The volume of the magnetic switch was reduced. To protect the thyristor and RSD, a diode was anti- parallely connected with the thyristor, which reduced the time requirement when a power voltage was applied to RSD. Experimental results show the circuit designed in this paper can switch a high voltage and high current smoothly, and allows the power voltage to change in a wider range.
基金supported by the National Natural Science Foundation of China(No.52107004)the China Postdoctoral Science Foundation(No.2020M680484 and No.2021T140201)the Fundamental Research Funds for the Central Universities(No.2021MS003)。
文摘In traditional hybrid DC circuit breakers(HCBs)schemes,complex equipment is usually required to ensure current commutation from mechanical to semiconductor switches,which cause not only additional construction costs and volume but also additional losses and maintenance work.Different from this condition,a low-loss and compact HCB scheme that does not use separate current commutation equipment is proposed in this study.By rationally using the charge and discharge of the snubber capacitor,the self-commutated semiconductor switch(SCS)module can integrate both the current commutation and shutdown functions,thereby greatly reducing cost and volume.The working process is discussed and analyzed in detail,and then a 10-kA prototype is developed and tested,which verifies the feasibility and effectiveness of the proposed scheme.Index Terms-HVDC circuit breakers,hybrid DC circuit breakers(HCBs),self-commutated semiconductor switch(SCS).
基金supported by the National Natural Science Foundation of China (Nos. 50837005 and 10876026)the Foundation of the State Key Laboratory of Electrical Insulation for Power Equipment (No. EIPE09203)the National Basic Research Program of China (No.2007CB310406)
文摘Photoconductive semiconductor switches (PCSSs) are widely used in high power ultra-wideband source applications and precise synchronization control due to their high power low-jitter high-repetition-frequency. In this letter, a 14-mm gap semi-insulating GaAs PCSS biased under 20 kV is triggered by a 1064-nm laser with a repetition frequency of 30 Hz. Although the trigger condition is greater than the threshold of the lock-on effect, the high gain mode is not observed. The results indicate that the high gain mode of the PCSS is quenched by decreasing the remnant voltage of pulsed energy storage capacitor.
基金Project supported by the National Natural Science Foundation of China(Nos.50837005,11204264)the Research Fund for Doctors of Xinjiang Normal University(No.XJNUBS 1220)the Research Fund for the Outstanding Young Teacher of Xinjiang Normal University (No.XJNU1214)
文摘Experiments with the limited space-charge accumulation(LSA) mode of oscillation in a large gap semiinsulating (SI) GaAs photoconductive semiconductor switch(PCSS) are discussed.It has been observed that growth and drift of a photo-activated charge domain(PACD) are quenched only when the bias voltage is more than twice the threshold voltage.The original negative resistance characteristics are directly utilized in the LSA mode;during LSA operation the spatial average of the electric field varies over a large portion of the negative differential mobility region of the velocity-electric field characteristic.The work efficiency of an SI GaAs PCSS is remarkably enhanced by electric field excursions into the positive resistance region when the total electric field is only below the threshold part of the time.The LSA mode can only operate in the certain conditions that satisfy the quenching of the accumulation layer and the smaller initial domain voltage.