We present an enhancement of the fluorescence of shallow(<10 nm) nitrogen-vacancy(NV^-)centers by using atomic layer deposition to deposit titanium oxide layers on the diamond surface. In this way, the shallow NV-c...We present an enhancement of the fluorescence of shallow(<10 nm) nitrogen-vacancy(NV^-)centers by using atomic layer deposition to deposit titanium oxide layers on the diamond surface. In this way, the shallow NV-center charge states were stabilized, leading to the increasing fluorescence intensity of about 2 times. This surface coating technique could produce a protective layer of controllable thickness without any damages to the solid-state quantum system surface, which might be an approach to the further passivation or packaging techniques for the solid-state quantum devices.展开更多
Using the method of Picus and Beer invariants, general expressions are obtained for the total intensity I and the degree of circular polarization Рcirc.of the luminescence of GaAs-type semiconductors with the partici...Using the method of Picus and Beer invariants, general expressions are obtained for the total intensity I and the degree of circular polarization Рcirc.of the luminescence of GaAs-type semiconductors with the participation of shallow acceptor levels in a longitudinal magnetic field H. Special cases are analyzed depending on the value and direction of the magnetic field strength, as well as on the constants of the g-factor of the acceptor g1,g2and the conduction band electron ge. In the case of a strong magnetic field H// [100], [111], [110], a numerical calculation of the angular dependence of the quantities I and Рcirc.was performed for some critical values of g2/g1, at which Рcirc.exhibits a sharp anisotropy in the range from −100% to +100%, and the intensity of the crystal radiation along the magnetic field tends to a minimum value.展开更多
基金National Natu- ral Science Foundation of China (No.11374280 and No.50772110). The authors wish to thank Guo-ping Guo, Jie You and Yang Li from the Key Lab of Quan- tum Information for the support of electron beam lithography. We also thank Ming-ling Li at University of Science and Technology of China for the technical support of ALD.
文摘We present an enhancement of the fluorescence of shallow(<10 nm) nitrogen-vacancy(NV^-)centers by using atomic layer deposition to deposit titanium oxide layers on the diamond surface. In this way, the shallow NV-center charge states were stabilized, leading to the increasing fluorescence intensity of about 2 times. This surface coating technique could produce a protective layer of controllable thickness without any damages to the solid-state quantum system surface, which might be an approach to the further passivation or packaging techniques for the solid-state quantum devices.
文摘Using the method of Picus and Beer invariants, general expressions are obtained for the total intensity I and the degree of circular polarization Рcirc.of the luminescence of GaAs-type semiconductors with the participation of shallow acceptor levels in a longitudinal magnetic field H. Special cases are analyzed depending on the value and direction of the magnetic field strength, as well as on the constants of the g-factor of the acceptor g1,g2and the conduction band electron ge. In the case of a strong magnetic field H// [100], [111], [110], a numerical calculation of the angular dependence of the quantities I and Рcirc.was performed for some critical values of g2/g1, at which Рcirc.exhibits a sharp anisotropy in the range from −100% to +100%, and the intensity of the crystal radiation along the magnetic field tends to a minimum value.
