To improve the cooling performance, shape optimization of a laidback fan-shaped film cooling hole was performed. Three geometric parameters, including hole length, lateral expansion angle and forward expansion angle, ...To improve the cooling performance, shape optimization of a laidback fan-shaped film cooling hole was performed. Three geometric parameters, including hole length, lateral expansion angle and forward expansion angle, were selected as the design parameters. Numerical model of the film cooling system was established, validated, and used to generate 32 groups of training samples. Least square support vector machine(LS-SVM) was applied for surrogate model, and the optimal design parameters were determined by a kind of chaotic optimization algorithm. As hole length, lateral expansion angle and forward expansion angle are 90 mm, 20° and 5°, the area-averaged film cooling effectiveness can reach its maximum value in the design space. LS-SVM coupled with chaotic optimization algorithm is a promising scheme for the optimization of shaped film cooling holes.展开更多
This paper describes the short channel theory of the bipolar field-effect transistor (BiFET) by partitioning the transistor into two sections,the source and drain sections,each can operate as the electron or hole em...This paper describes the short channel theory of the bipolar field-effect transistor (BiFET) by partitioning the transistor into two sections,the source and drain sections,each can operate as the electron or hole emitter or collector under specific combinations of applied terminal voltages. Analytical solution is obtained in the source and drain sections by separating the two-dimensional trap-free Shockley Equations into two one-dimensional equations parametrically coupled via the surface-electric-potential and by using electron current continuity and hole current continuity at the boundary between the emitter and collector sections. Total and electron-hole-channel components of the output and transfer currents and conductances, and the electrical lengths of the two sections are computed and presented in graphs as a function of the D. C. terminal voltages for the model transistor with two identical and connected metal-oxide-silicon-gates (MOS-gates) on a thin pure-silicon base over practical ranges of thicknesses of the silicon base and gate oxide. Deviations of the long physical channel currents and conductances from those of the short electrical channels are reported.展开更多
Hybrid RANS-LES methods offer a means of reducing computational cost and setup time to simulate transitional flows. Several methods are evaluated in ANSYS CFX, including Scale-Adaptive Simulation (SAS), Shielded Detac...Hybrid RANS-LES methods offer a means of reducing computational cost and setup time to simulate transitional flows. Several methods are evaluated in ANSYS CFX, including Scale-Adaptive Simulation (SAS), Shielded Detached Eddy Simulation (SDES), Stress-Blended Eddy Simulation (SBES), and Zonal Large Eddy Simulation (ZLES), along with a no-model laminar simulation. Each is used to simulate an adiabatic flat plate film cooling experiment of a shaped hole at low Reynolds number. Adiabatic effectiveness is calculated for Blowing Ratio (BR) = 1.5 and Density Ratio (DR) = 1.5. The ZLES method and laminar simulation most accurately match experimental lateral-average adiabatic effectiveness along the streamwise direction from the trailing edge of the hole to 35 hole diameters downstream of the hole (X/D = 0 to X/D = 35), with RMS deviations of 5.1% and 4.2%, and maximum deviations of 8% and 11%, respectively. The accuracy of these models is attributed to the resolution of turbulent structures in not only the mixing region but in the upstream boundary layer as well, where the other methods utilize RANS and do not switch to LES.展开更多
We study a two-stream backward-wave oscillator with a slot-hole structure at short millimeter waves with the help of a three-dimensional particle-in-cell simulation. In order to increase the interaction region of the ...We study a two-stream backward-wave oscillator with a slot-hole structure at short millimeter waves with the help of a three-dimensional particle-in-cell simulation. In order to increase the interaction region of the electron beam, the efficiency and the output power, a slot-hole loaded rectangular waveguide structure used as the high-frequency system is proposed. Based on the mechanism of the backward-wave oscillator, a slow-wave oscillator with a frequency of 0.14 THz is designed. The simulations show that the output power and the efficiency of the oscillator can be enhanced due to the coupling between the two beams through the slot holes. The interaction efficiency is 5.18%, and the starting current density is below 5 A. cm^-2 for the two beams. These attractive results indicate that, based on the two-stream backward-wave oscillator, we can get short millimeter wave sources with high power and low current density.展开更多
This paper describes the improvement of leading edge film cooling effectiveness for a turbine inlet guide vane by using fan-shaped film cooling holes. The modification details are presented in comparison with the base...This paper describes the improvement of leading edge film cooling effectiveness for a turbine inlet guide vane by using fan-shaped film cooling holes. The modification details are presented in comparison with the base-line configuration of cylindrical holes. Numerical simulations were carried out for the base-line and modified configurations by using CFX, in which the k-ε turbulence model and scalable wall function were chosen. Contours of adiabatic film cooling effectiveness on the blade surfaces and span-wise distributions of film cooling effectiveness downstream the rows of cooling holes interested for the different cooling configurations were compared and discussed. It is showed that with the use of fan-shaped cooling holes around the leading edge, the adiabatic film cooling effectiveness can be enhanced considerably. In comparison with the cylindrical film cooling holes, up to 40% coolant mass flow can be saved by using fan-shaped cooling holes to obtain the comparable film cooling effectiveness for the studied inlet guide vane.展开更多
基金Project(U1508212)supported by the National Natural Science Foundation of ChinaProject(2015M570448)supported by the Postdoctoral Science Foundation of China
文摘To improve the cooling performance, shape optimization of a laidback fan-shaped film cooling hole was performed. Three geometric parameters, including hole length, lateral expansion angle and forward expansion angle, were selected as the design parameters. Numerical model of the film cooling system was established, validated, and used to generate 32 groups of training samples. Least square support vector machine(LS-SVM) was applied for surrogate model, and the optimal design parameters were determined by a kind of chaotic optimization algorithm. As hole length, lateral expansion angle and forward expansion angle are 90 mm, 20° and 5°, the area-averaged film cooling effectiveness can reach its maximum value in the design space. LS-SVM coupled with chaotic optimization algorithm is a promising scheme for the optimization of shaped film cooling holes.
文摘This paper describes the short channel theory of the bipolar field-effect transistor (BiFET) by partitioning the transistor into two sections,the source and drain sections,each can operate as the electron or hole emitter or collector under specific combinations of applied terminal voltages. Analytical solution is obtained in the source and drain sections by separating the two-dimensional trap-free Shockley Equations into two one-dimensional equations parametrically coupled via the surface-electric-potential and by using electron current continuity and hole current continuity at the boundary between the emitter and collector sections. Total and electron-hole-channel components of the output and transfer currents and conductances, and the electrical lengths of the two sections are computed and presented in graphs as a function of the D. C. terminal voltages for the model transistor with two identical and connected metal-oxide-silicon-gates (MOS-gates) on a thin pure-silicon base over practical ranges of thicknesses of the silicon base and gate oxide. Deviations of the long physical channel currents and conductances from those of the short electrical channels are reported.
文摘Hybrid RANS-LES methods offer a means of reducing computational cost and setup time to simulate transitional flows. Several methods are evaluated in ANSYS CFX, including Scale-Adaptive Simulation (SAS), Shielded Detached Eddy Simulation (SDES), Stress-Blended Eddy Simulation (SBES), and Zonal Large Eddy Simulation (ZLES), along with a no-model laminar simulation. Each is used to simulate an adiabatic flat plate film cooling experiment of a shaped hole at low Reynolds number. Adiabatic effectiveness is calculated for Blowing Ratio (BR) = 1.5 and Density Ratio (DR) = 1.5. The ZLES method and laminar simulation most accurately match experimental lateral-average adiabatic effectiveness along the streamwise direction from the trailing edge of the hole to 35 hole diameters downstream of the hole (X/D = 0 to X/D = 35), with RMS deviations of 5.1% and 4.2%, and maximum deviations of 8% and 11%, respectively. The accuracy of these models is attributed to the resolution of turbulent structures in not only the mixing region but in the upstream boundary layer as well, where the other methods utilize RANS and do not switch to LES.
基金Project supported by the National Natural Science Foundation of China(Grant Nos.11075032 and 10975031)
文摘We study a two-stream backward-wave oscillator with a slot-hole structure at short millimeter waves with the help of a three-dimensional particle-in-cell simulation. In order to increase the interaction region of the electron beam, the efficiency and the output power, a slot-hole loaded rectangular waveguide structure used as the high-frequency system is proposed. Based on the mechanism of the backward-wave oscillator, a slow-wave oscillator with a frequency of 0.14 THz is designed. The simulations show that the output power and the efficiency of the oscillator can be enhanced due to the coupling between the two beams through the slot holes. The interaction efficiency is 5.18%, and the starting current density is below 5 A. cm^-2 for the two beams. These attractive results indicate that, based on the two-stream backward-wave oscillator, we can get short millimeter wave sources with high power and low current density.
基金supported by the National 973 Program of China through grant number 2007CB210108
文摘This paper describes the improvement of leading edge film cooling effectiveness for a turbine inlet guide vane by using fan-shaped film cooling holes. The modification details are presented in comparison with the base-line configuration of cylindrical holes. Numerical simulations were carried out for the base-line and modified configurations by using CFX, in which the k-ε turbulence model and scalable wall function were chosen. Contours of adiabatic film cooling effectiveness on the blade surfaces and span-wise distributions of film cooling effectiveness downstream the rows of cooling holes interested for the different cooling configurations were compared and discussed. It is showed that with the use of fan-shaped cooling holes around the leading edge, the adiabatic film cooling effectiveness can be enhanced considerably. In comparison with the cylindrical film cooling holes, up to 40% coolant mass flow can be saved by using fan-shaped cooling holes to obtain the comparable film cooling effectiveness for the studied inlet guide vane.