Based on the Fermi's golden rule and the theory of Boltzmann collision term approximation, a physically-based model for hole scattering rate(SR) in strained Si1-x Gex/(100)Si was presented, which takes into accoun...Based on the Fermi's golden rule and the theory of Boltzmann collision term approximation, a physically-based model for hole scattering rate(SR) in strained Si1-x Gex/(100)Si was presented, which takes into account a variety of scattering mechanisms,including ionized impurity, acoustic phonon, non-polar optical phonon and alloy disorder scattering. It is indicated that the SRs of acoustic phonon and non-polar optical phonon decrease under the strain, and the total SR in strained Si1-x Gex/(100)Si also decreases obviously with increasing Ge fraction(x). Moreover, the total SR continues to show a constant tendency when x is less than 0.3. In comparison with bulk Si, the total SR of strained Si1-x Gex/(100) Si decreases by about 58%.展开更多
The InAs/AlSb heterostructures with step-graded GaAsxSb1-x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied. The step-graded GaAsxSb1-x metamorphic buffer layers are used to relax...The InAs/AlSb heterostructures with step-graded GaAsxSb1-x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied. The step-graded GaAsxSb1-x metamorphic buffer layers are used to relax the strain and block defects at each interface of the layers. Meanwhile, adding Sb to GaAs is also beneficial to suppressing the formation of dislocations in the subsequent materials. The influences of the growth temperature of the step-graded GaAsxSb1-x metamorphic buffer layer on the electron mobility and surface topography are investigated for a series of samples. Based on the atomic force microscopy（AFM）, high resolution x-ray diffraction（HRXRD）, reciprocal space map（RSM）, and Hall measurements, the crystal quality and composition of GaAsxSb1-x layer are seen to strongly depend on growth temperature while keeping the Ga growth rate and V/III ratio constant. The results show that the highest electron mobility is 10270 cm2/V·s and the roughness is 4.3 nm for the step-graded GaAsxSb1-x metamorphic buffer layer grown at a temperature of 410℃.展开更多
X-ray powder diffraction, resistivity and magnetization studies have been performed on polycrystalline Nd（FexMn1-x）2Si2 （0≤x 〈 1） compounds which crystallize in a ThCr2Si2-type structure with the space group 14/...X-ray powder diffraction, resistivity and magnetization studies have been performed on polycrystalline Nd（FexMn1-x）2Si2 （0≤x 〈 1） compounds which crystallize in a ThCr2Si2-type structure with the space group 14/mmm. The field-cooled temperature dependence of the magnetization curves shows that, at low temperatures, NdFe2Si2 is antiferromagnetic, while the other compounds show ferromagnetic behaviour. The substitution of Fe for Mn leads to a decrease in lattice parameters a, c and unit-cell volume V. The Curie temperature of the compounds first increases, reaches a maximum around x=0.7, then decreases with Fe content. However, the saturation magnetization decreases monotonically with increasing Fe content. This Fe concentration dependent magnetization of Nd（FexMn1-x）2Si2 compounds can be well explained by taking into account the complex effect on magnetic properties due to the substitution of Mn by Fe. The temperature＇s square dependence on electrical resistivity indicates that the curve of Nd（Fe0.6Mn0.4）2Si2 has a quasi-linear character above its Curie temperature, which is typical of simple metals.展开更多
The oxidation behaviors of bulk Ti3Si(1-x)AlxC2 prepared by hot pressing were investigated. The results show that the isothermal oxidation behavior of Ti3SiC2 obeys a parabolic law between 900 and 1 100℃and follows a...The oxidation behaviors of bulk Ti3Si(1-x)AlxC2 prepared by hot pressing were investigated. The results show that the isothermal oxidation behavior of Ti3SiC2 obeys a parabolic law between 900 and 1 100℃and follows a two-step parabolic rate law between 1 200℃and 1 300℃. The cyclic oxidation behavior of material is assumed to obey a three-step parabolic rate law at 1 100℃and 1 200℃. The calculated activation energy of isothermal oxidation is 101.43 kJ/mol. The oxide layers which consist of a mass ofα-Al2O3 and little TiO2 and SiO2 are observed on Ti3SiC2 as a dense and adhesive protect scale. The oxidation mechanism varies with the additive aluminum that greatly improves the oxidation resistance of Ti3SiC2.展开更多
Magnetic refrigeration is a revolutionary, efficient, environmentally friendly cooling technology, which is on the threshold of commercialization. The magnetic rare earth materials are utilized as the magnetic refrige...Magnetic refrigeration is a revolutionary, efficient, environmentally friendly cooling technology, which is on the threshold of commercialization. The magnetic rare earth materials are utilized as the magnetic refrigerants in most cooling devices, and for many cooling application the Nd2Fe14B permanent magnets are employed as the source of the magnetic field. The status of the near room temperature magnetic cooling was reviewed.展开更多
基金Project(JY0300122503)supported by the Research Fund for the Doctoral Program of Higher Education of ChinaProject(P140c090303110c0904)supported by NLAIC Research Fund,ChinaProjects(K5051225014,7214608503)supported by the Fundamental Research Funds for the Central Universities,China
文摘Based on the Fermi's golden rule and the theory of Boltzmann collision term approximation, a physically-based model for hole scattering rate(SR) in strained Si1-x Gex/(100)Si was presented, which takes into account a variety of scattering mechanisms,including ionized impurity, acoustic phonon, non-polar optical phonon and alloy disorder scattering. It is indicated that the SRs of acoustic phonon and non-polar optical phonon decrease under the strain, and the total SR in strained Si1-x Gex/(100)Si also decreases obviously with increasing Ge fraction(x). Moreover, the total SR continues to show a constant tendency when x is less than 0.3. In comparison with bulk Si, the total SR of strained Si1-x Gex/(100) Si decreases by about 58%.
基金Project supported by the National Defense Advanced Research Project,China(Grant No.315 xxxxx301)the National Defense Innovation Program,China(Grant No.48xx4)+2 种基金the National Key Technologies Research and Development Program,China(Grant No.2018YFA0306101)the Scientific Instrument Developing Project of the Chinese Academy of Sciences(Grant No.YJKYYQ20170032)the National Natural Science Foundation of China(Grant No.61505196)
文摘The InAs/AlSb heterostructures with step-graded GaAsxSb1-x metamorphic buffer layers grown on Si substrates by molecular beam epitaxy are studied. The step-graded GaAsxSb1-x metamorphic buffer layers are used to relax the strain and block defects at each interface of the layers. Meanwhile, adding Sb to GaAs is also beneficial to suppressing the formation of dislocations in the subsequent materials. The influences of the growth temperature of the step-graded GaAsxSb1-x metamorphic buffer layer on the electron mobility and surface topography are investigated for a series of samples. Based on the atomic force microscopy（AFM）, high resolution x-ray diffraction（HRXRD）, reciprocal space map（RSM）, and Hall measurements, the crystal quality and composition of GaAsxSb1-x layer are seen to strongly depend on growth temperature while keeping the Ga growth rate and V/III ratio constant. The results show that the highest electron mobility is 10270 cm2/V·s and the roughness is 4.3 nm for the step-graded GaAsxSb1-x metamorphic buffer layer grown at a temperature of 410℃.
基金Project supported by the National Basic Research Program of China (Grant No 2006CB601101)
文摘X-ray powder diffraction, resistivity and magnetization studies have been performed on polycrystalline Nd（FexMn1-x）2Si2 （0≤x 〈 1） compounds which crystallize in a ThCr2Si2-type structure with the space group 14/mmm. The field-cooled temperature dependence of the magnetization curves shows that, at low temperatures, NdFe2Si2 is antiferromagnetic, while the other compounds show ferromagnetic behaviour. The substitution of Fe for Mn leads to a decrease in lattice parameters a, c and unit-cell volume V. The Curie temperature of the compounds first increases, reaches a maximum around x=0.7, then decreases with Fe content. However, the saturation magnetization decreases monotonically with increasing Fe content. This Fe concentration dependent magnetization of Nd（FexMn1-x）2Si2 compounds can be well explained by taking into account the complex effect on magnetic properties due to the substitution of Mn by Fe. The temperature＇s square dependence on electrical resistivity indicates that the curve of Nd（Fe0.6Mn0.4）2Si2 has a quasi-linear character above its Curie temperature, which is typical of simple metals.
基金Project (KF200505) supported by the Key Laboratory of Heavy Ion Physics (Peking University), Ministry of Education
文摘The oxidation behaviors of bulk Ti3Si(1-x)AlxC2 prepared by hot pressing were investigated. The results show that the isothermal oxidation behavior of Ti3SiC2 obeys a parabolic law between 900 and 1 100℃and follows a two-step parabolic rate law between 1 200℃and 1 300℃. The cyclic oxidation behavior of material is assumed to obey a three-step parabolic rate law at 1 100℃and 1 200℃. The calculated activation energy of isothermal oxidation is 101.43 kJ/mol. The oxide layers which consist of a mass ofα-Al2O3 and little TiO2 and SiO2 are observed on Ti3SiC2 as a dense and adhesive protect scale. The oxidation mechanism varies with the additive aluminum that greatly improves the oxidation resistance of Ti3SiC2.
基金Project supported bythe U.S .Department of Energy ,Office of Basic Energy Sciences , Materials Science and Engineering Division and Astronautics Corporation of America , Milwaukee , Wisconsin
文摘Magnetic refrigeration is a revolutionary, efficient, environmentally friendly cooling technology, which is on the threshold of commercialization. The magnetic rare earth materials are utilized as the magnetic refrigerants in most cooling devices, and for many cooling application the Nd2Fe14B permanent magnets are employed as the source of the magnetic field. The status of the near room temperature magnetic cooling was reviewed.
