Pb1-xSrxTiO3 （0≤x≤0.9） thin films on Si （100） substrate were prepared by the sol-gel process and their characteristics were investigated as a function of strontium content（x）. With increasing of the strontium ...Pb1-xSrxTiO3 （0≤x≤0.9） thin films on Si （100） substrate were prepared by the sol-gel process and their characteristics were investigated as a function of strontium content（x）. With increasing of the strontium content, the tetragonality （c/a） was slightly decreased, the splitting peaks become less prominent and the splitting peaks tend to merge into a single peak. Furthermore, the grain size of the films was systematically reduced with the increase in strontium content.展开更多
We describe a direct atomic layer deposition method to grow lubricant tungsten disulfide （WS2） films. The WS2 films were deposited on a Si （100） substrate and a zinc sulfide （ZnS） film coated the Si （100） subs...We describe a direct atomic layer deposition method to grow lubricant tungsten disulfide （WS2） films. The WS2 films were deposited on a Si （100） substrate and a zinc sulfide （ZnS） film coated the Si （100） substrate using tungsten hexacarbonyl and hydrogen sulfide as precursors. The ZnS film served as an intermediate layer to facilitate the nucleation and growth of the WS2 films. The thickness of the WS2 films was measured via scanning electron microscope, the microstructure was probed with an X-ray diffractometer and a transmission electron microscope. The friction coefficient was measured with a ball-on-disk tester under dry nitrogen. The results reveal that the WS2 films deposited on both substrates are N175 nm and have （002） and （101） crystal orientations. The WS2 film deposited on the ZnS coated Si substrate exhibits a stronger （002） orientation and a denser crystal structure than that deposited on the Si substrate. The WS2 films on both substrates have low friction coefficients. How- ever, due to the stronger （002） orientation and denser crystal structure, the friction coefficient of the WS2 film deposited on ZnS coated Si substrate is smaller with longer wear life.展开更多
Fe-doped amorphous FexCl~ granular films were prepared on n-Si （100） substrates by d.c. magnetron sputtering. The structur- al properties of FexC1-x films were investigated by X-ray diffraction （XRD）, atomic force...Fe-doped amorphous FexCl~ granular films were prepared on n-Si （100） substrates by d.c. magnetron sputtering. The structur- al properties of FexC1-x films were investigated by X-ray diffraction （XRD）, atomic force microscope （AFM） and Raman spec- troscopy. The results show that the iron and carbon of as-deposited films are in amorphous state, and the FexC1-x films are di- amond-like carbon （DLC） films. After doping iron into the DLC films, a smooth surface morphology of the FexC1-x films has been obtained with the surface roughness Ra of about 0.231 nm for x=18at%. The FexC1-x films have good soft magnetic prop- erties with the coercivity of approximately 20 Oe. A high positive magnetoresistance （MR） up to 93% with x=lat% was ob- served in a FexCl-x granular film at 300 K. The resistance characteristic of Fe-C films is changed at about 230 K and the positive MR effect can be understood by the p-n heterojunction theory.展开更多
文摘Pb1-xSrxTiO3 （0≤x≤0.9） thin films on Si （100） substrate were prepared by the sol-gel process and their characteristics were investigated as a function of strontium content（x）. With increasing of the strontium content, the tetragonality （c/a） was slightly decreased, the splitting peaks become less prominent and the splitting peaks tend to merge into a single peak. Furthermore, the grain size of the films was systematically reduced with the increase in strontium content.
基金supported by the National Natural Science Fundation of China(Grant Nos.50825501,51321092&51335005)the National Science and Technology Major Project(Grant No.2008ZX02104-001)
文摘We describe a direct atomic layer deposition method to grow lubricant tungsten disulfide （WS2） films. The WS2 films were deposited on a Si （100） substrate and a zinc sulfide （ZnS） film coated the Si （100） substrate using tungsten hexacarbonyl and hydrogen sulfide as precursors. The ZnS film served as an intermediate layer to facilitate the nucleation and growth of the WS2 films. The thickness of the WS2 films was measured via scanning electron microscope, the microstructure was probed with an X-ray diffractometer and a transmission electron microscope. The friction coefficient was measured with a ball-on-disk tester under dry nitrogen. The results reveal that the WS2 films deposited on both substrates are N175 nm and have （002） and （101） crystal orientations. The WS2 film deposited on the ZnS coated Si substrate exhibits a stronger （002） orientation and a denser crystal structure than that deposited on the Si substrate. The WS2 films on both substrates have low friction coefficients. How- ever, due to the stronger （002） orientation and denser crystal structure, the friction coefficient of the WS2 film deposited on ZnS coated Si substrate is smaller with longer wear life.
基金supported by the National Natural Science Foundation of China (Grant No. U0734001)the Fundamental Research Funds for the Central Universities,SCUT (Grant Nos. 2009ZM0247 and 2012ZZ0015)
文摘Fe-doped amorphous FexCl~ granular films were prepared on n-Si （100） substrates by d.c. magnetron sputtering. The structur- al properties of FexC1-x films were investigated by X-ray diffraction （XRD）, atomic force microscope （AFM） and Raman spec- troscopy. The results show that the iron and carbon of as-deposited films are in amorphous state, and the FexC1-x films are di- amond-like carbon （DLC） films. After doping iron into the DLC films, a smooth surface morphology of the FexC1-x films has been obtained with the surface roughness Ra of about 0.231 nm for x=18at%. The FexC1-x films have good soft magnetic prop- erties with the coercivity of approximately 20 Oe. A high positive magnetoresistance （MR） up to 93% with x=lat% was ob- served in a FexCl-x granular film at 300 K. The resistance characteristic of Fe-C films is changed at about 230 K and the positive MR effect can be understood by the p-n heterojunction theory.
