The evolution of self organized Ge quantum dots structure is investigated by scanning tunneling microscopy and atomic force microscopy during annealing treatment up to 700℃ in an ultra high vacuum(UHV) system.When t...The evolution of self organized Ge quantum dots structure is investigated by scanning tunneling microscopy and atomic force microscopy during annealing treatment up to 700℃ in an ultra high vacuum(UHV) system.When the sample temperature rises to 630℃,a great amount of new dots emerge on the wetting layer,which are believed to be incoherent islands compared with the dislocation free coherent islands formed during molecular beam epitaxy growth.展开更多
文摘The evolution of self organized Ge quantum dots structure is investigated by scanning tunneling microscopy and atomic force microscopy during annealing treatment up to 700℃ in an ultra high vacuum(UHV) system.When the sample temperature rises to 630℃,a great amount of new dots emerge on the wetting layer,which are believed to be incoherent islands compared with the dislocation free coherent islands formed during molecular beam epitaxy growth.
