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DFT Investigation of O_2 Adsorption on Si(001)-(2×2×1):H
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作者 邓小燕 杨春 +2 位作者 周明秀 郁卫飞 李金山 《Chinese Journal of Chemical Physics》 SCIE CAS CSCD 北大核心 2006年第6期485-487,共3页
A novel model was developed to theoretically evaluate the 02 adsorption on H-terminated Si(001)-(2×2×1) surface. The periodic boundary condition, the ultrasoft pseudopotentials technique based on density... A novel model was developed to theoretically evaluate the 02 adsorption on H-terminated Si(001)-(2×2×1) surface. The periodic boundary condition, the ultrasoft pseudopotentials technique based on density functional theory (DFT) with generalized gradient approxi,natior, (GGA) functional were applied in our ab initio calculations. By analyzing bonding energy oil site, the favourable adsorption site was determined. The calculations also predicted that the adsorption products should be Si=O and H2O. This theoretical study snpported the reaction mechanism provided by Kovalev et al, The results were also a base for further investigation of some more complex systems such as the oxida.tion on porous silicon surface. 展开更多
关键词 si(001-(2×1):h O2 Density functional theory (DFT) Adsorption site
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Si(001)-(2×2×1):H表面弛豫研究
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作者 邓小燕 王秀清 《河北北方学院学报(自然科学版)》 2008年第5期11-13,21,共4页
目的研究Si(001)-(2×2×1):H表面的几何结构和电子特性.方法在周期边界条件下,采用基于密度泛函理论的广义梯度近似平面波超软赝势法,对Si(001)-(2×2×1):H表面结构进行了弛豫计算并对该表面进行电子结构分析.结果结... 目的研究Si(001)-(2×2×1):H表面的几何结构和电子特性.方法在周期边界条件下,采用基于密度泛函理论的广义梯度近似平面波超软赝势法,对Si(001)-(2×2×1):H表面结构进行了弛豫计算并对该表面进行电子结构分析.结果结果表明弛豫作用使得部分电子从第一层硅原子转移到了第二层硅原子上,从而导致表层硅呈现正电性.结论这样的电子结构特性将有助于负电性强的氧气分子在硅氢表面的吸附.弛豫后的Si(001)-(2×2×1):H表面的能带结构具有半导体材料的特征. 展开更多
关键词 si(001)-(1): h 表面弛豫 密度泛函理论(DFT)
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