ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition （MOCVD） at different total gas flow rates. The current versus voltage and temperature （I - V - T） characteristics, t...ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition （MOCVD） at different total gas flow rates. The current versus voltage and temperature （I - V - T） characteristics, the deep-level transient spectroscopy （DLTS） and the photoluminescence （PL） spectra of the samples were measured. DLTS shows two deep-level centres of E1 （Ec-0.13±0.02eV） and E2 （Ec-0.43±0.05eV） in sample 1202a, which has a ZnO/p-Si heterostructure. A deep level at Ec-0.13±0.01 eV was also obtained from the I -T characteristics. It was considered to be the same as E1 obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of E1 was varied when the total gas flow rate was changed.展开更多
采用热裂解聚合物前驱体法制备出了具有竹节结构的Si B C N纳米材料。扫描电子显微镜(SEM)和透射电子显微镜(TEM)结果表明样品具有特殊的竹节状(叠杯状)形貌,电子散射能谱(EDX)证实了样品组分为Si、B、C、N。通过微区喇曼光谱仪研究了...采用热裂解聚合物前驱体法制备出了具有竹节结构的Si B C N纳米材料。扫描电子显微镜(SEM)和透射电子显微镜(TEM)结果表明样品具有特殊的竹节状(叠杯状)形貌,电子散射能谱(EDX)证实了样品组分为Si、B、C、N。通过微区喇曼光谱仪研究了样品在488nm激光激发下从84～290K的变温发射特性,在490～800nm观察到位于580,620nm附近两个较强发射峰和740nm附近一个弱的发射峰。变温实验说明相应发射峰与材料禁带中形成的杂质能级有关。展开更多
基金Project supported by the National Natural Science Foundation of China (Grant Nos 50472009, 10474091 and 50532070)
文摘ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition （MOCVD） at different total gas flow rates. The current versus voltage and temperature （I - V - T） characteristics, the deep-level transient spectroscopy （DLTS） and the photoluminescence （PL） spectra of the samples were measured. DLTS shows two deep-level centres of E1 （Ec-0.13±0.02eV） and E2 （Ec-0.43±0.05eV） in sample 1202a, which has a ZnO/p-Si heterostructure. A deep level at Ec-0.13±0.01 eV was also obtained from the I -T characteristics. It was considered to be the same as E1 obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of E1 was varied when the total gas flow rate was changed.
文摘采用热裂解聚合物前驱体法制备出了具有竹节结构的Si B C N纳米材料。扫描电子显微镜(SEM)和透射电子显微镜(TEM)结果表明样品具有特殊的竹节状(叠杯状)形貌,电子散射能谱(EDX)证实了样品组分为Si、B、C、N。通过微区喇曼光谱仪研究了样品在488nm激光激发下从84～290K的变温发射特性,在490～800nm观察到位于580,620nm附近两个较强发射峰和740nm附近一个弱的发射峰。变温实验说明相应发射峰与材料禁带中形成的杂质能级有关。
