Absorption coefficient is a physical parameter to describe electromagnetic energy absorption of materials, which is closely related to solar cells and photodetectors. We grow a series of positive-intrinsic-negative(PI...Absorption coefficient is a physical parameter to describe electromagnetic energy absorption of materials, which is closely related to solar cells and photodetectors. We grow a series of positive-intrinsic-negative(PIN) structures on silicon wafer by a gas source molecule beam epitaxy system and the investigate the absorption coefficient through the photovoltaic processes in detail. It is found that the absorption coefficient is enhanced by one order and can be tuned greatly through the thickness of the intrinsic layer in the PIN structure, which is also demonstrated by the 730-nm-wavelength laser irradiation. These results cannot be explained by the traditional absorption theory.We speculate that there could be some uncovered mechanism in this system, which will inspire us to understand the absorption process further.展开更多
基金the financial support from the Fundamental Research Program of Shanxi Province,China(No.202203021211130)the National Natural Science Foundation of China(Nos.51801132,52075359)。
基金financially supported by the Fundamental Research Funds for the Central Universities,China(No.2020CDJDPT001)the Chongqing Natural Science Foundation,China(No.cstc2021jcyj-msxm X0699)。
基金support from the National Natural Science Foundation of China (No. 51825401)the Foundation of National Key Laboratory for Precision Hot Processing of Metals, China (No. JCKYS2021603C001)the Natural Science Foundation of Heilongjiang Province, China (No. LH2020E032)。
基金Supported by the National Natural Science Foundation of China under Grant No 11574362
文摘Absorption coefficient is a physical parameter to describe electromagnetic energy absorption of materials, which is closely related to solar cells and photodetectors. We grow a series of positive-intrinsic-negative(PIN) structures on silicon wafer by a gas source molecule beam epitaxy system and the investigate the absorption coefficient through the photovoltaic processes in detail. It is found that the absorption coefficient is enhanced by one order and can be tuned greatly through the thickness of the intrinsic layer in the PIN structure, which is also demonstrated by the 730-nm-wavelength laser irradiation. These results cannot be explained by the traditional absorption theory.We speculate that there could be some uncovered mechanism in this system, which will inspire us to understand the absorption process further.
