Temperature-Dependent Photoluminescence Characteristics of InAs/GaAs Quantum Dots Directly Grown on Si Substrates

The first operation of an electrically pumped 1.3μm InAs/GaAs quantum-dot laser was previously reported epitaxially grown on Si （100） substrate. Here the direct epitaxial growth condition of 1.3μm InAs/OaAs quantum on a Si substrate is further investigated using atomic force microscopy, etch pit density and temperature-dependent photoluminescence （PL） measurements. The PL for Si-based InAs/GaAs quantum dots appears to be very sensitive to the initial OaAs nucleation temperature and thickness with strongest room-temperature emission at 40000 （17Onto nucleation layer thickness）, due to the lower density of defects generated under this growth condition, and stronger carrier confinement within the quantum dots.

The Efficiency Droop of InGaN-Based Green LEDs with Different Superlattice Growth Temperatures on Si Substrates via Temperature-Dependent Electroluminescence

InGaN-based green light-emitting diodes （LEDs） with different growth temperatures of superlattice grown on Si （111） substrates are investigated by temperature-dependent electroluminescence between 100 K and 350K. It is observed that with the decrease of the growth temperature of the superlattice from 895℃ to 855℃, the forward voltage decreases, especially at low temperature. We presume that this is due to the existence of the larger average size of V-shaped pits, which is determined by secondary ion mass spectrometer measurements. Meanwhile, the sample with higher growth temperature of superlattice shows a severer efficiency droop at cryogenic temperatures （about 100 K-150 K）. Electron overflow into p-GaN is considered to be the cause of such phenomena, which is relevant to the poorer hole injection into multiple quantum wells and the more reduced effective active volume in the active region.

The influence of AlN/GaN superlattice intermediate layer on the properties of GaN grown on Si（111） substrates

AlN/GaN superlattice buffer is inserted between GaN epitaxiai layer and Si substrate before epitaxiai growth of GaN layer. High-quality and crack-free GaN epitaxiai layers can be obtained by inserting AlN/GaN superlattice buffer layer. The influence of AlN/GaN superlattice buffer layer on the properties of GaN films are investigated in this paper. One of the important roles of the superlattice is to release tensile strain between Si substrate and epilayer. Raman spectra show a substantial decrease of in-plane tensile strain in GaN layers by using AlN/GaN superlattice buffer layer. Moreover, TEM cross-sectional images show that the densities of both screw and edge dislocations are significantly reduced. The GaN films grown on Si with the superlattice buffer also have better surface morphology and optical properties.

Inter-facet composition modulation of III-nitride nanowires over pyramid textured Si substrates by stationary molecular beam epitaxy

InGaN nanowires (NWs) are grown on pyramid textured Si substrates by stationary plasma-assisted molecular beam epitaxy (PA-MBE). The incidence angles of the highly directional source beams vary for different pyramid facets, inducing a distinct inter-facet modulation of the In content of the InGaN NWs, which is verified by spatial element distribution analysis. The resulting multi-wavelength emission is confirmed by photoluminescence (PL) and cathodoluminescence (CL). Pure GaN phase formation dominates on certain facets, which is attributed to extreme local growth conditions, such as low active N flux. On the same facets, InGaN NWs exhibit a morphology change close to the pyramid ridge, indicating inter-facet atom migration. This cross-talk effect due to inter-facet atom migration is verified by a decrease of the inter-facet In content modulation amplitude with shrinking pyramid size. A detailed analysis of the In content variation across individual pyramid facets and element distribution line profiles reveals that the cross-talk effect originates mainly from the inter-facet atom migration over the convex pyramid ridge facet boundaries rather than the concave base line facet boundaries. This is understood by first-principles calculations showing that the pyramid baseline facet boundary acts as an energy barrier for atom migration, which is much higher than that of the ridge facet boundary. The influence of the growth temperature on the inter-facet In content modulation is also presented. This work gives deep insight into the composition modulation for the realization of multi-color light-emitting devices based on the monolithic growth of InGaN NWs on pyramid textured Si substrates.

The effect of single AlGaN interlayer on the structural properties of GaN epilayers grown on Si (111) substrates

High-quality and nearly crack-free GaN epitaxial layer was obtained by inserting a single A1GaN interlayer between GaN epilayer and high-temperature AlN buffer layer on Si （111） substrate by metalorganic chemical vapor deposition. This paper investigates the effect of AlCaN interlayer on the structural properties of the resulting CaN epilayer. It confirms from the optical microscopy and Raman scattering spectroscopy that the AIGaN interlayer has a remarkable effect on introducing relative compressive strain to the top GaN layer and preventing the formation of cracks. X-ray diffraction and transmission electron microscopy analysis reveal that a significant reduction in both screw and edge threading dislocations is achieved in GaN epilayer by the insertion of AlGaN interlayer. The process of threading dislocation reduction in both AlGaN interlayer and GaN epilayer is demonstrated.

Reactive Magnetron Sputtering of CN_x Thin Films on β-Si_3N_4 Substrates

Carbon nitride CN. thin films have been deposited on polycrystalline β-Si3N4 substrates by un-balanced magnetron sputtering in a nitrogen discharge. Both the film deposition rate and the nitrogen concentration decrease with substrate temperature increase in the range of 100~400℃The maximum of nitrogen content is 40 at. pct. Raman spectroscopy and atomic force mi-croscopy were used to characterize the bonding, microstructure and surface roughness of the films. Nanoindentation experiments exhibit a higher hardness of 70 GPa and an extremely elas-tic recovery of 85% at higher substrate temperature.

Theoretical analysis of semi/non-polar In GaN/GaN light-emitting diodes grown on silicon substrates

A theoretical study of polar and semi/non-polar InGaN/GaN light-emitting diodes（LEDs） with different internal surface polarization charges, which can be grown on Si substrates, is conducted by using APSYS software. In comparison with polar structure LEDs, the semi-polar structure exhibits a higher concentration of electrons and holes and radiative recombination rate, and its reduced built-in polarization field weakens the extent of band bending which causes the shift of peak emission wavelength. So the efficiency droop of semi-polar InGaN/GaN LEDs declines obviously and the optical power is significantly improved. In comparison with non-polar structure LEDs, although the concentration of holes and electrons as well as the radiative recombination rate of the semi-polar structure are better in the last two quantum wells（QWs） approaching the p-Ga N side, the uniformity of distribution of carriers and radiative recombination rate for the nonpolar structure is better. So the theoretical analysis indicates that the removal of the internal polarization field in the MQWs active regions for non-polar structure LEDs contributes to the uniform distribution of electrons and holes, and decreases the electron leakage. Thus it enhances the radiative recombination rate, and further improves the IQEs and optical powers, and shows the best photoelectric properties among these three structures.

Preparation of c-Axis Oriented LiNb_(1-x) Ta_xO_3 Films on Si(111) Substrates by a Modified Sol-gel Process

In this work, we succeeded in the preparation of LiNb 1- x Ta x O 3 films on Si(111) substrates by means of sol gel process, and the usual sol gel process for the preparation of LiNbO 3 and LiTaO 3 films on Si substrates was improved by adding a 33% aqueous solution of CH 3CH 2OH to the mixed sols of LiNb(OCH 2CH 3) 6 and LiTa(OCH 2CH 3) 6 . The crystallization behavior of LiNb 1- x Ta x O 3 films on Si(111) substrates has been studied. Highly c axis oriented LiNb 1- x Ta x O 3 films have been obtained within the tantalum composition range of \{0< x <0 33\}. Some factors such as the hydrogen termination of the silicon surface, the RTP annealing process that provides the unidirectional heat flow and the preheating temperature are discussed to analyze the crystallization of the c axis oriented films.

Preparation and characterization of GaN films grown on Ga-diffused Si (111) substrates

Hexagonal GaN films were prepared by nitriding Ga_2O_3 films with flowingammonia. Ga_2O_3 films were deposited on Ga-diffused Si (111) substrates by radio frequency (r.f.)magnetron sputtering. This paper have investigated the change of structural properties of GaN filmsnitrided in NH_3 atmosphere at the temperatures of 850, 900, and 950 deg C for 15 min and nitridedat the temperature of 900 deg C for 10, 15, and 20 min, respectively. X-ray diffraction (XRD),scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray photoelectronspectroscopy (XPS) were used to analyze the structure, surface morphology and composition ofsynthesized samples. The results reveal that the as-grown films are polycrystalline GaN withhexagonal wurtzite structure and GaN films with the highest crystal quality can be obtained whennitrided at 900 deg C for 15 min.

CMOS FinFET Fabricated on Bulk Silicon Substrate

A CMOS FinFET fabricated on bulk silicon substrate is demonstrated.Besides owning a FinFET structure similar to the original FinFET on SOI,the device combines a grooved planar MOSFET in the Si substrate and the fabrication processes are fully compatible with conventional CMOS process,including salicide technology.The CMOS device,inverter,and CMOS ring oscillator of this structure with normal poly silicon and W/TiN gate electrode are fabricated respectively.Driving current and sub threshold characteristics of CMOS FinFET on Si substrate with actual gate length of 110nm are studied.The inverter operates correctly and minimum per stage delay of 201 stage ring oscillator is 146ps at V d=3V.The result indicates the device is a promising candidate for the application of future VLSI circuit.

Deposition of ZnO Films on Freestanding CVD Thick Diamond Films

For ZnO/diamond structured surface acoustic wave （SAW） filters, performance is sensitively dependent on the quality of the ZnO films. In this paper, we prepare highly-oriented and fine grained polycrystalline ZnO thin films with excellent surface smoothness on the smooth nucleation surfaces of freestanding CVD diamond films by metal organic chemical vapour deposition （MOCVD）. The properties of the ZnO films are characterized by x-ray diffraction （XRD）, scanning electron microscopy （SEM）, and photoluminescence （PL） spectrum. The influences of the deposition conditions on the quality of ZnO films are discussed briefly. ZnO/freestanding thick-diamond-film layered SAW devices with high response frequencies are expected to be developed.

AlGaInP-Si glue bonded high performance light emitting diodes

We propose a new method of using conductive glue to agglutinate GaAs based A1CaInP light emitting diodes （LEDs） onto silicon substrate, and the absorbing GaAs layer is subsequently removed by grinding and selective wet etching. It was found that A1GaInP-Si glue agglutinated LEDs have larger saturation current and luminous intensity than the conventional LEDs working at the same injected current. The luminous intensity of the new device is as much as 1007.4 mcd at a saturation current of 125 mA without being encapsulated, while the conventional LEDs only have 266.2 mcd at a saturation current of 105 mA. The luminescence intensity is also found to increase by about 3.2% after working at 50 mA for 768 h. This means that the new structured LEDs have good reliability performance.

Fast Growth of Highly Ordered TiO2 Nanotube Arrays on Si Substrate under High-Field Anodization

Highly ordered TiO_2 nanotube arrays(NTAs) on Si substrate possess broad applications due to its high surfaceto-volume ratio and novel functionalities, however, there are still some challenges on facile synthesis. Here, we report a simple and cost-effective high-field(90–180V) anodization method to grow highly ordered TiO_2 NTAs on Si substrate,and investigate the effect of anodization time, voltage, and fluoride content on the formation of TiO_2 NTAs. The current density–time curves, recorded during anodization processes, can be used to determine the optimum anodization time. It is found that the growth rate of TiO_2 NTAs is improved significantly under high field, which is nearly 8 times faster than that under low fields(40–60 V). The length and growth rate of the nanotubes are further increased with the increase of fluoride content in the electrolyte.

Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si(111) substrate with AlGaN interlayer

We present the growth of CaN epilayer on Si （111） substrate with a single A1GaN interlayer sandwiched between the GaN epilayer and A1N buffer layer by using the metalorganic chemical vapour deposition. The influence of the AlN buffer layer thickness on structural properties of the GaN epilayer has been investigated by scanning electron microscopy, atomic force microscopy, optical microscopy and high-resolution x-ray diffraction. It is found that an A1N buffer layer with the appropriate thickness plays an important role in increasing compressive strain and improving crystal quality during the growth of AlGaN interlayer, which can introduce a more compressive strain into the subsequent grown GaN layer, and reduce the crack density and threading dislocation density in GaN film.

Horizontal InAs nanowire transistors grown on patterned silicon-on-insulator substratea

High-density horizontal InAs nanowire transistors are fabricated on the interdigital silicon-on-insulator substrate.Hexagonal InAs nanowires are uniformly grown between face-to-face（111） vertical sidewalls of neighboring Si fingers by metal–organic chemical vapor deposition. The density of InAs nanowires is high up to 32 per group of silicon fingers,namely an average of 4 nanowires per micrometer. The electrical characteristics with a higher on/off current ratio of 2×10~5are obtained at room temperature. The silicon-based horizontal InAs nanowire transistors are very promising for future high-performance circuits.

PREPARATION OF LN_2 TEMPERATURE REGION SUPERCONDUCTOR FILM ON Si(100) SUBSTRATE

Expermental results of the preparation of YBaCuO superconductor thin film on Si(100) substrate by the method of ion beam sputtering deposition is presented.A ZrO_2 buffer layer was applied to Si(100)substrate,and was found to play an important role in resisting the diffusion of Si toward the film.The thin film is mainly a 123 phase with strong c-axis prefer- red orientation.The onset transition temperature of the film is 100 K and the final transition temperature 78 K.

Performance improvement of Ga N-based light-emitting diodes transferred from Si(111) substrate onto electroplating Cu submount with embedded wide p-electrodes

Crack-free Ga N/In Ga N multiple quantum wells（MQWs） light-emitting diodes（LEDs） are transferred from Si substrate onto electroplating Cu submount with embedded wide p-electrodes. The vertical-conducting n-side-up configuration of the LED is achieved by using the through-hole structure. The widened embedded p-electrode covers almost the whole transparent conductive layer（TCL）, which could not be applied in the conventional p-side-up LEDs due to the electrodeshading effect. Therefore, the widened p-electrode improves the current spreading property and the uniformity of luminescence. The working voltage and series resistance are thereby reduced. The light output of embedded wide p-electrode LEDs on Cu is enhanced by 147% at a driving current of 350 m A, in comparison to conventional LEDs on Si.

Influence of the lattice parameter of the AlN buffer layer on the stress state of GaN film grown on(111)Si

GaN films grown on(111)Si substrate with different lattice parameters of the AlN buffer layer by metal–organic chemical vapor deposition are studied.The stress states obtained by different test methods are compared and it is found that the lattice parameter of the AlN buffer layer may have a significant effect on the stress state in the initial stage of subsequent GaN film growth.A larger compressive stress is beneficial to improved surface morphology and crystal quality of GaN film.The results of further orthogonal experiments show that an important factor affecting the lattice parameter is the growth rate of the AlN buffer layer.This work may be helpful for realizing simple GaN-on-Si structures and thus reducing the costs of growth processes.

Laser Direct Writing of Ag Films from Solution on Si Substrate

Pulsed Nd:YAG laser was used to irradiate Si substrate immersed in AgNO3 ethylene glycol solution to deposit Ag films along the lines scanned by laser on the substrate, which is a photo-thermal decomposing process. The decomposed Ag atoms congregate and form polycrystalline Ag particles. The Ag concentration changes greatly with the total laser energyA absorbed by substrate. Transmission electron microscopy (TEM) observation shows the Ag particles are inlaid in the Si substrate. Auger electron spectrum (AES) shows that the Ag concentration decreases with the increase of the sputtering depth, and there is no oxygen element on the surface of the deposited Ag films.

Effects of Annealing Temperature on Properties of ZnO Thin Films Grown by Pulsed Laser Deposition

ZnO thin films are deposited on n-Si（111） substrates by pulsed laser deposition（PLD） system. Then the samples are annealed at different temperatures in air ambient and their properties are investigated particularly as a function of annealing temperature. The microstructure, morphology and optical properties of the as-grown ZnO films are studied by X-ray diffraetion（XRD）. atomic force mieroseope（AFM）, Fourier transform infrared spectroscopy（FTIR） and photoluminescence（PL） spectra. The results show that the as- grown ZnO films have a hexagonal wurtzite structure with a preferred c-axis orientation. Moreover, the diameters of the ZnO crystallites become larger and the crystal quality of the ZnO fihns is improved with the increase of annealing temperature.