Regulating Effect of Substrate Temperature on Sputteringgrown Ge/Si QDs under Low Ge Deposition

The effect of deposition temperature on the morphology and optoelectronic performance of Ge/Si QDs grown by magnetron sputtering under low Ge deposition(~4 nm)was investigated by atomic force microscopy,Raman spectroscopy,and photoluminescence(PL)tests.The experimental results indicate that temperatures higher than 750℃effectively increase the crystallization rate and surface smoothness of the Si buffer layer,and temperatures higher than 600℃significantly enhance the migration ability of Ge atoms,thus increasing the probability of Ge atoms meeting and nucleating to form QDs on Si buffer layer,but an excessively high temperature will cause the QDs to undergo an Ostwald ripening process and thus develop into super large islands.In addition,some PL peaks were observed in samples containing small-sized,high-density Ge QDs,the photoelectric properties reflected by these peaks were in good agreement with the corresponding structural characteristics of the grown QDs.Our results demonstrate the viability of preparing high-quality QDs by magnetron sputtering at high deposition rate,and the temperature effect is expected to work in conjunction with other controllable factors to further regulate QD growth,which paves an effective way for the industrial production of QDs that can be used in future devices.

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

High Hole Mobility Si/Si_(l-x)Ge_(x)/Si Heterostructure

High mobility Si/Si_(l-x)Ge_(x)/Si p-type modulation-doped double heterostructures have been grown by RRH/VLP-CVD(rapid radiant heating/very low pressure-CVD).Hole Hall mobilities as high as about 300cm^(2)/V.s(293 K)and 7500cm^(2)/V.s(77K)have been obtained for heterostructures with x=0.3.The variation of hole mobility with temperature and the influence of Ge fraction on hole mobility were investigated.

The property of Si/SiGe/Si heterostructure during thermal budget characterized by HRXRD

Si/SiGe/Si heterostructures grown by ultra-high-vacuum chemical vapor deposition (UHVCVD) werecharacterized by Rutherford backscattering/Channeling (RBS/C) together with high resolution X ray diffraction(HRXRD). High quality SiGe base layer was obtained. The Si/SiGe/Si heterostructures were subject to conventionalfurnace annealing and rapid thermal annealing with temperature between 750 ℃ and 910 ℃. Both strain and its re-laxation degree in SiGe layer are calculated by HRXRD combined with elastic theory, which are never reported inother literatures. The rapid thermal annealing at elevated temperature between 880 ℃ and 910 ℃ for very short timehad almost no influence on the strain in Si0.84Ge0. 16 epilayer. However, high temperature (900℃) furnace annealingfor 1h prompted the strain in Si0.84Ge0.16 layer to relax.

Heterogeneous isomorphism hollow SiGe nanospheres with porous carbon reinforcing for superior electrochemical lithium storage

Silicon is emerging as a promising next-generation lithium-ion battery anode because of its high theoretical capacity and low cost.However,the poor cyclability and inferior rate performance hinder its largescale applications.Here,hollow silicon/germanium(H-SiGe)nanospheres with a binary-active component and heterogeneous structure combined with porous carbon(pC)reinforcing are synthesized as lithium-ion battery anodes.Experimental studies demonstrate that the H-SiGe/pC anodes possess tiny volume expansion,high ion/electron conductivity,and stable electrode interface.Theoretical calculations confirm that through the replacement of Si using Ge with rational component control,the diffusion energy barrier of lithium will be reduced and lithium storage ability can be improved because of the slight charge polarization.Benefiting from these unique merits,the H-SiGe/pC anodes display a high initial specific capacity of 2922.2 mA h g^(-1)at 0.1 A g^(-1),superior rate capability(59.4%capacity retention from 0.5 to 8 A g^(-1)),and excellent cycling stability(81%retention after 700 cycles at 5 A g^(-1)at 1.0–1.2 mg cm^(-2)).An outstanding stability is preserved even at a high loading of 3.2 mg cm^(-2)with an improved reversible capacity of 429.1 mA h g^(-1)after 500 cycles at 4 A g^(-1).Furthermore,the full-cell with the prelithiated H-SiGe/pC anode and LiFePO4cathode exhibits an impressive capacity performance.

Electrical and deep levels characteristics of ZnO/Si heterostructure by MOCVD deposition

ZnO films have been prepared on p-type Si substrates by metal-organic chemical vapour deposition （MOCVD） at different total gas flow rates. The current versus voltage and temperature （I - V - T） characteristics, the deep-level transient spectroscopy （DLTS） and the photoluminescence （PL） spectra of the samples were measured. DLTS shows two deep-level centres of E1 （Ec-0.13±0.02eV） and E2 （Ec-0.43±0.05eV） in sample 1202a, which has a ZnO/p-Si heterostructure. A deep level at Ec-0.13±0.01 eV was also obtained from the I -T characteristics. It was considered to be the same as E1 obtained from DLTS measurement. The emission related to this deep level center was detected by PL spectra. In addition, the energy location and the relative trap density of E1 was varied when the total gas flow rate was changed.

Resistive Switching Behavior of Ag/Mg0.2Zn0.8O/ZnMn2O4/p^+-Si Heterostructure Devices for Nonvolatile Memory Applications

The Ag/Mg0.2Zn0.8O/ZnMn2O4/p^＋-Si heterostructure devices were fabricated by sol-gel spin coating technique and the resistive switching behavior,conduction mechanism,endurance characteristic,and retention properties were investigated.A distinct bipolar resistive switching behavior of the devices was observed at room temperature.The resistance ratio R_（HRS）/RLRS of high resistance state and low resistance state is as large as four orders of magnitude with a readout voltage of 2.0 V.The dominant conduction mechanism of the device is trap-controlled space charge limited current（SCLC）.The devices exhibit good durability under 1×10^3cycles and the degradation is invisible for more than 10^6 s.

Rectifying and photovoltaic properties of ZnCo_2O_4/Si heterostructure grown by pulsed laser deposition

ZnCo2O4/Si heterostructures have been fabricated by a pulsed laser deposition method, and their transport behaviors and photovoltaic properties have been characterized. The ZnCo2O4/Si heterostructures show a good rectifying behavior at five different temperatures ranging from 50 K to 290 K. The measurements of the photovoltaic response reveals that a photovoltage of 33 mV is generated when the heterostructures are illuminated by a 532 nm laser of 250 mW/cm^2 and mechanically chopped at 2500 Hz. Both the photocurrent and the photovoltage clearly increase with the increase of the laser intensity at room temperature. However, the heterostructures＇ photovoltage peak decreases with the increase of the temperature. This work may open new perspectives for ZnCo2O4/Si heterostructure-based devices.

Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate

We report a novel structure of A1GaN/GaN heterostructure field effect transistors （HFETs） with a Si and Mg pair- doped interlayer grown on Si substrate. By optimizing the doping concentrations of the pair-doped interlayers, the mobility of 2DEG increases by twice for the conventional structure under 5 K due to the improved crystalline quality of the conduction channel. The proposed HFET shows a four orders lower off-state leakage current, resulting in a much higher on/off ratio （ - 10^9）. Further temperature-dependent performance of Schottky diodes revealed that the inhibition of shallow surface traps in proposed HFETs should be the main reason for the suppression of leakage current.

Current transport in ZnO/Si heterostructure grown by laser molecular beam epitaxy

The n-ZnO/p-Si heterojunction was fabricated by depositing high quality single crystalline aluminium-doped n-type ZnO film on p-type Si using the laser molecular beam epitaxy technique. The heterojunction exhibited a good rectifying behavior. The electrical properties of the heterojunction were investigated by means of temperature dependence current density-voltage measurements. The mechanism of the current transport was proposed based on the band structure of the heterojunction. When the applied bias V is lower than 0.15 V, the current follows the Ohmic behavior. When 0.15 V ~ V 〈 0.6 V, the transport property is dominated by diffusion or recombination in the junction space charge region, while at higher voltages （V 〉 0.6 V）, the space charge limited effect becomes the main transport mechanism. The current-voltage characteristic under illumination was also investigated. The photovoltage and the short circuit current density of the heterojunction aproached 270 mV and 2.10 mA/cm^2, respectively.

Atomic-scale strain analysis for advanced Si/SiGe heterostructure by using transmission electron microscopy

Three-dimensional stacked transistors based on Si/SiGe heterojunction are a potential candidate for future low-power and high-performance computing in integrated circuits.Observing and accurately measuring strain in Si/SiGe heterojunctions is critical to increasing carrier mobility and improving device performance.Transmission electron microscopy(TEM)with high spatial resolution and analytical capabilities provides technical support for atomic-scale strain measurement and promotes significant progress in strain mapping technology.This paper reviews atomic-scale strain analysis for advanced Si/SiGe heterostructure based on TEM techniques.Convergent-beam electron diffraction,nano-beam electron diffraction,dark-field electron holography,and high-resolution TEM with geometrical phase analysis,are comprehensively discussed in terms of spatial resolution,strain precision,field of view,reference position,and data processing.Also,the advantages and critical issues of these strain analysis methods based on the TEM technique are sum-marized,and the future direction of TEM techniques in the related areas is prospected.

Interfacial dynamics of GaP/Si(100) heterostructure grown by molecular beam epitaxy

The atomic structure and surface chemistry of GaP/Si(100)heterostructure with different pre-layers grown by molecu-lar beam epitaxy are studied.It is found that GaP epilayer with Ga-riched pre-layers on Si(100)substrate has regular surface mor-phology and stoichiometric abrupt heterointerfaces from atomic force microscopes(AFMs)and spherical aberration-corrected transmission electron microscopes(ACTEMs).The interfacial dynamics of GaP/Si(100)heterostructure is investigated by X-ray photoelectron spectroscopy(XPS)equipped with an Ar gas cluster ion beam,indicating that Ga pre-layers can lower the inter-face formation energy and the bond that is formed is more stable.These results suggest that Ga-riched pre-layers are more con-ducive to the GaP nucleation as well as the epitaxial growth of GaP material on Si(100)substrate.

Research of Current Mode Atomic Force Microscopy (C-AFM) for Si/SiC Heterostructures on 6H-SiC(0001)

Si/SiC heterostructures with different growth temperatures were prepared on 6 HSiC(0001)by LPCVD.Current mode atomic force microscopy and transmission electron microscopy were employed to investigate the electrical properties and crystalline structure of Si/SiC heterostructures.Face-centered cubic(FCC)on hexagonal close-packing(HCP)epitaxy of the Si(111)/SiC(0001)heterostructure was realized at 900°C.As the growth temperature increases to1050°C,the<110>preferred orientation of the Si film is observed.The Si films on 6 H-SiC(0001)with different growth orientations consist of different distinctive crystalline grains:quasi-spherical grains with a general size of 20μm,and columnar grains with a typical size of 7μm×20μm.The electrical properties are greatly influenced by the grain structures.The Si film with<110>orientation on SiC(0001)consists of columnar grains,which is more suitable for the fabrication of Si/SiC devices due to its low current fluctuation and relatively uniform current distribution.

Fabrication and Properties of Ag/Mg0.2Zn0.8O/La0.67Ca0.33MnO/p^＋-Si Resistive Switching Heterostructure Devices

Mg0.2Zn0.8OMZO/La0.67Ca0.33MnOLCMO heterostructure was deposited on p-^＋-Si substrates by sol-gel spin coating technique. The Ag/MZO/LCMO/p-^＋-Si devices exhibit a bipolar, reversible, and remarkable current-voltage characteristic at room temperature. An obvious multilevel resistive switching effect is observed in the devices. The dominant conduction mechanism of the devices is trap-controlled space charge limited current. The resistance ratio of high resistance state and low resistance state of the devices is about six orders of magnitude, and the degradation is invisible in the devices after 250 successive switching cycles. The present results suggest that the Ag/MZO/LCMO/p-^＋-Si devices may be a potential and multilevel candidate for nonvolatile memory application.

非化学计量比MnFe(P，Si，Ge)合金在低场下的磁热效应

通过XRD和磁性测量对非化学计量比MnFe(P,Si,Ge)合金的相组成和磁性进行了研究.xRD分析表明。所有样品都具有Fe_2P型六角结构,主相为(Re,Mn)_2(P,Si,Ge),并存在少量的第二相(Fe,Mn)_3(Si,Ge).过量的Mn和Fe都会使合金的Curie温度降低,由343K(化学计量比)降低到294K(过量Mn)和286K(过量Fe);过量的Mn能减小热滞,而过量的Fe会使热滞增加;磁熵变也有所减小,在1.5T的磁场下,最大磁熵变由5.2J/(kg·K)(化学计量比)减小到4.9J/(kg·K)(过量Mn)和3.8J/(kg·K)(过量Fe).

原材料Gd对Gd-Si-Ge合金巨磁热效应影响的研究

采用国产钆制作Gd-Si-Ge合金,测量H-M曲线,计算磁熵变(-ΔSm)判断其磁热效应。发现采用商业级钆配制合金时,由于杂质抑制了材料的一级相变,未发现巨磁热效应。经提纯后的钆尽管没有Ames实验室的纯度高,但配制的合金具有典型的一级相变,-ΔSm值基本上达到Ames实验室报道的数据,而且居里点有所提高。

热丝CVD法在单晶硅衬底上低温外延生长Si和Ge薄膜的研究

采用热丝CVD法在单晶Si衬底上进行了Si和Ge薄膜的低温外延生长,用XRD和Raman谱对其结构性能进行了分析。结果表明:在衬底温度200℃时,Si(111)单晶衬底上外延生长出了Raman峰位置为521.0cm-1;X射线半峰宽(FWHM)为5.04cm-1。结晶质量非常接近于体单晶的(111)取向的本征Si薄膜;在衬底温度为300℃时,在Si(100)单晶衬底上异质外延,得到了Raman峰位置为300.3cm-1的Ge薄膜,Ge薄膜的晶体取向为Ge(220)。研究表明热丝CVD是一种很好的低温外延薄膜的方法。

离子束溅射制备Si/Ge多层膜的结晶研究

采用离子束溅射制备Si/Ge多层膜,通过X射线小角衍射计算其周期厚度及各子层的厚度,用Raman光谱对Si/Ge多层膜的微观结构及Si子层的结构进行表征。结果表明,所制备的Si/Ge多层膜中,当Ge子层的厚度为6. 2nm时, Si子层的结晶质量较好,表明适量的Ge含量有诱导Si结晶的作用。

Si基Ge异质结构发光器件的研究进展

近年来,与Si的CMOS工艺相兼容的Ge/Si异质结构发光器件取得很多重要的进展。本文概述了Si基Ge异质结构发光器件的最新成果,如Ge/Si量子点发光二极管、Si衬底上的Ge发光二极管及激光器和Ge/SiGe多量子阱发光二极管,分别描述了这些器件的特点和增强其发光特性的途径。最后展望了Si基Ge异质结构发光器件的发展趋势,指出尽管Si基Ge异质结构发光器件获得了很大的发展,但是器件的发光效率仍然很低,离实用还有一定距离,还需要在材料和器件的结构方面有更多的创新。

SiO_2/Si(111)表面Ge量子点的生长研究

Si衬底用化学方法清洗后,表面大约残余1.0 nm厚SiO2薄膜。利用原子力显微镜(AFM)和反射高能电子衍射(RHEED)来研究温度和Ge蒸发厚度对在SiO2薄膜表面生长的Ge量子点的影响。实验结果表明,当衬底温度超过500℃时,SiO2开始与Ge原子发生化学反应,并形成与Si(111)表面直接外延的Ge量子点。在650℃时,只有Ge的厚度达到0.5nm时,Ge量子点才开始形成。