Regulating Effect of Substrate Temperature on Sputteringgrown Ge/Si QDs under Low Ge Deposition

The effect of deposition temperature on the morphology and optoelectronic performance of Ge/Si QDs grown by magnetron sputtering under low Ge deposition(~4 nm)was investigated by atomic force microscopy,Raman spectroscopy,and photoluminescence(PL)tests.The experimental results indicate that temperatures higher than 750℃effectively increase the crystallization rate and surface smoothness of the Si buffer layer,and temperatures higher than 600℃significantly enhance the migration ability of Ge atoms,thus increasing the probability of Ge atoms meeting and nucleating to form QDs on Si buffer layer,but an excessively high temperature will cause the QDs to undergo an Ostwald ripening process and thus develop into super large islands.In addition,some PL peaks were observed in samples containing small-sized,high-density Ge QDs,the photoelectric properties reflected by these peaks were in good agreement with the corresponding structural characteristics of the grown QDs.Our results demonstrate the viability of preparing high-quality QDs by magnetron sputtering at high deposition rate,and the temperature effect is expected to work in conjunction with other controllable factors to further regulate QD growth,which paves an effective way for the industrial production of QDs that can be used in future devices.

Sensitivity investigation of 100-MeV proton irradiation to SiGe HBT single event effect

The single event effect(SEE) sensitivity of silicon–germanium heterojunction bipolar transistor(Si Ge HBT) irradiated by 100-Me V proton is investigated. The simulation results indicate that the most sensitive position of the Si Ge HBT device is the emitter center, where the protons pass through the larger collector-substrate(CS) junction. Furthermore, in this work the experimental studies are also carried out by using 100-Me V proton. In order to consider the influence of temperature on SEE, both simulation and experiment are conducted at a temperature of 93 K. At a cryogenic temperature, the carrier mobility increases, which leads to higher transient current peaks, but the duration of the current decreases significantly.Notably, at the same proton flux, there is only one single event transient(SET) that occurs at 93 K. Thus, the radiation hard ability of the device increases at cryogenic temperatures. The simulation results are found to be qualitatively consistent with the experimental results of 100-Me V protons. To further evaluate the tolerance of the device, the influence of proton on Si Ge HBT after gamma-ray(^(60)Coγ) irradiation is investigated. As a result, as the cumulative dose increases, the introduction of traps results in a significant reduction in both the peak value and duration of the transient currents.

Nano silica aerogel-induced formation of an organic/alloy biphasic interfacial layer enables construction of stable high-energy lithium metal batteries

Lithium metal batteries represent promising candidates for high-energy-density batteries, however, many challenges must still be overcome,e.g., interface instability and dendrite growth. In this work, nano silica aerogel was employed to generate a hybrid film with high lithium ion conductivity(0.6 mS cm^(-1)at room temperature) via an in situ crosslinking reaction. TOF-SIMS profile analysis has revealed conversion mechanism of hybrid film to Li–Si alloy/Li F biphasic interface layer, suggesting that the Li–Si alloy and Li F-rich interface layer promoted rapid Li+transport and shielded the Li anodes from corrosive reactions with electrolyte-derived products. When coupled with nickel-cobalt-manganese-based cathodes, the batteries achieve outstanding capacity retention over 1000 cycles at 1 C. Additionally the developed film coated on Li enabled high coulombic efficiency(99.5%) after long-term cycling when coupled with S cathodes. Overall, the results presented herein confirm an effective strategy for the development of high-energy batteries.

Ohmic Contact at Al/TiO_2/n-Ge Interface with TiO_2 Deposited at Extremely Low Temperature

TiO2deposited at extremely low temperature of 120°C by atomic layer deposition is inserted between metal and n-Ge to relieve the Fermi level pinning. X-ray photoelectron spectroscopy and cross-sectional transmission electron microscopy indicate that the lower deposition temperature tends to effectively eliminate the formation of GeOxto reduce the tunneling resistance. Compared with TiO2deposited at higher temperature of 250°C,there are more oxygen vacancies in lower-temperature-deposited TiO2, which will dope TiO2contributing to the lower tunneling resistance. Al/TiO2/n-Ge metal-insulator-semiconductor diodes with 2 nm 120°C deposited TiO2achieves 2496 times of current density at-0.1 V compared with the device without the TiO2interface layer case, and is 8.85 times larger than that with 250°C deposited TiO2. Thus inserting extremely low temperature deposited TiO2to depin the Fermi level for n-Ge may be a better choice.

Heterogeneous isomorphism hollow SiGe nanospheres with porous carbon reinforcing for superior electrochemical lithium storage

Silicon is emerging as a promising next-generation lithium-ion battery anode because of its high theoretical capacity and low cost.However,the poor cyclability and inferior rate performance hinder its largescale applications.Here,hollow silicon/germanium(H-SiGe)nanospheres with a binary-active component and heterogeneous structure combined with porous carbon(pC)reinforcing are synthesized as lithium-ion battery anodes.Experimental studies demonstrate that the H-SiGe/pC anodes possess tiny volume expansion,high ion/electron conductivity,and stable electrode interface.Theoretical calculations confirm that through the replacement of Si using Ge with rational component control,the diffusion energy barrier of lithium will be reduced and lithium storage ability can be improved because of the slight charge polarization.Benefiting from these unique merits,the H-SiGe/pC anodes display a high initial specific capacity of 2922.2 mA h g^(-1)at 0.1 A g^(-1),superior rate capability(59.4%capacity retention from 0.5 to 8 A g^(-1)),and excellent cycling stability(81%retention after 700 cycles at 5 A g^(-1)at 1.0–1.2 mg cm^(-2)).An outstanding stability is preserved even at a high loading of 3.2 mg cm^(-2)with an improved reversible capacity of 429.1 mA h g^(-1)after 500 cycles at 4 A g^(-1).Furthermore,the full-cell with the prelithiated H-SiGe/pC anode and LiFePO4cathode exhibits an impressive capacity performance.

SiCp/Al-Si基复合材料界面结构调控及强化机制的研究进展

SiCp/Al-Si基复合材料具有高的比强度、比刚度、比模量,良好的导热、导电、耐磨性及尺寸稳定性等优点,作为结构功能性材料应用于空间工程、电子封装、交通运输和精密仪器等领域。其研究热点主要集中在界面结构调控、强化机制及性能调控等方面。在SiCp/Al-Si复合材料中存在着增强体与基体界面、析出相与基体界面、析出相与增强体界面,这些界面受各种因素影响,会出现多种界面反应和界面产物,界面结构和结合状态复杂而多样。基于此,本文综述了制备工艺、基体合金成分和SiCp表面改性等方面对SiCp/Al-Si基复合材料界面结构的影响及调控,并总结了影响其力学性能的因素及强化机制的研究现状,最后对复合材料未来的发展及研究方向进行了展望。

Theoretical Studies on the Si(001)-SiO_2 Interface Structure

Novel models （2× 1） of Si（001）-SiO2 interface structure have been established. The method of the first-principle General Gradient Approximation （GGA） is employed to structurally optimize the established theoretical models under the K-point space of periodic boundary condition. The structures after optimization have been analyzed, and the results show that the interfaces present in disordered state and both Si-O-Si and Si=O structures exist. Meanwhile, the bonding of surface structure is analyzed via the graphics of electron localization function（ELF）.

N掺杂对Si-DLC薄膜的结构性能影响及摩擦机理研究

采用平板阴极等离子体增强化学气相沉积技术,通过调控N_(2)流量在GCr15基底上制备了系列硅氮共掺杂类金刚石碳基(Si/N-DLC)薄膜,分析探索N掺杂对于Si-DLC薄膜结构、力学性能和摩擦学行为的作用规律以及Si/NDLC薄膜的低摩擦磨损机理.结果表明:N元素的引入促进Si-DLC薄膜中sp^(2)-C结构的形成,降低了薄膜的硬度和弹性模量,但能大幅改善Si-DLC薄膜的韧性并增强结合(>20 N).更重要的是,N掺杂可有效降低Si-DLC薄膜的摩擦系数并改善其耐磨性能,摩擦系数和磨损率相较于Si-DLC薄膜分别降低了约26%和45%.其摩擦机理是类石墨碳(GLC)转移膜的形成使得摩擦界面发生转移,有效降低了Si/N-DLC薄膜的摩擦系数,并且依赖于摩擦界面的石墨化程度和氢含量.而磨损行为取决于其薄膜自身韧性和抵抗弹塑性变形的能力,磨痕内部脆性断裂缺口会造成转移膜的大面积破坏,加剧了黏着磨损.此外,确定了Si/N-DLC薄膜低摩擦(摩擦系数≤0.05)的最佳服役区间,相关结果为Si/N-DLC薄膜的结构性能调控和工程应用提供参考.

Primary Mg_(2)Si phase and Mg_(2)Si/α-Mg interface modified by Sn and Sb elements in a Mg-5Sn-2Si-1.5Al-1Zn-0.8Sb alloy

The microstructure of primary Mg_(2)Si and the interface of Mg_(2)Si/α-Mg modified by Sn and Sb elements in an as-cast Mg-5Sn-2Si-1.5Al-1Zn-0.8Sb(wt.%) alloy were investigated.In the primary Mg_(2)Si phase not only the Si atoms but also the Mg atoms could be substituted by Sn and Sb atoms,resulting in the slightly reduced lattice constant a of 0.627 nm.An OR of Mg_(2)Si phase and α-Mg in the form of[001]Mg_(2)Si‖[01■1]α,(220)Mg_(2)Si‖(0■12)αwas discovered.Between primary Mg_(2)Si phase and α-Mg matrix two transitional nano-particle layers were formed.In the rim region of primary Mg_(2)Si particle,Mg_(2)Sn precipitates sizing from 5 nm to 50 nm were observed.Adjacent to the boundary of primary Mg_(2)Si particle,luxuriant columnar crystals of primary Mg_(2)Sn phase with width of about 25 nm and length of about100 nm were distributed on the α-Mg matrix.The lattice constant of the Mg_(2)Sn precipitate in primary Mg_(2)Si particle was about 0.756 nm.Three ORs between Mg_(2)Sn and Mg_(2)Si were found,in which the Mg_(2)Sn precipitates had strong bonding interfaces with Mg_(2)Si phase.Three new minor ORs between Mg_(2)Sn phase and α-Mg were found.The lattice constant of primary Mg_(2)Sn phase was enlarged to 0.813 nm owing to the solution of Sn and Sb atoms.Primary Mg_(2)Sn had edge-to-edge interfaces with α-Mg.Therefore,the primary Mg_(2)Si particle and α-Mg were united and the interfacial adhesion was improved by the two nano-particles layers of Mg_(2)Sn phase.

Improvement of Ge MOS Electrical and Interfacial Characteristics by using NdAlON as Interfacial Passivation Layer

The Ge metal-oxide-semiconductor (MOS) capacitors were fabricated with HfO2 as gate dielectric.AlON,NdON,and NdAlON were deposited between the gate dielectric and the Ge substrate as the interfacial passivation layer (IPL).The electrical properties (such as capacitance-voltage (C-V) and gate leakage current density versus gate voltage (J_(g)-V_(g))) were measured by HP4284A precision LCR meter and HP4156A semiconductor parameter analyzer.The chemical states and interfacial quality of the high-k/Ge interface were investigated by X-ray photoelectron spectroscopy (XPS).The experimental results show that the sample with the NdAlON as IPL exhibits the excellent interfacial and electrical properties.These should be attributed to an effective suppression of the Ge suboxide and HfGeOx interlayer,and an enhanced blocking role against inter-diffusion of the elements during annealing by the NdAlON IPL.

A natural language user interface for fuzzy scope queries

This paper presents a two-agent framework to build a natural langua g e query interface for IC information system, focusing more on scope queries in a single English sentence. The first agent, parsing agent, syntactically p rocesses and semantically interprets natural language sentence to construct a fu zzy structured query language (SQL) statement. The second agent, defuzzif ying agent, defuzzifies the imprecise part of the fuzzy SQL statement into its e quivalent executable precise SQL statement based on fuzzy rules. The first agent can also actively ask the user some necessary questions when it manages to disa mbiguate the vague retrieval requirements. The adaptive defuzzification approach employed in the defuzzifying agent is discussed in detail. A prototype interface has been implemented to demonstrate the effectiveness.

Forward and reverse electron transport properties across a CdS/Si multi-interface nanoheterojunction

The electron transport behavior across the interface plays an important role in determining the performance of op- toelectronic devices based on heterojunctions. Here through growing CdS thin film on silicon nanoporous pillar array, an untraditional, nonplanar, and multi-interface CdS/Si nanoheterojunction is prepared. The current density versus voltage curve is measured and an obvious rectification effect is observed. Based on the fitting results and model analyses on the forward and reverse conduction characteristics, the electron transport mechanism under low forward bias, high forward bias, and reverse bias are attributed to the Ohmic regime, space-charge-limited current regime, and modified Poole-Frenkel regime respectively. The forward and reverse electrical behaviors are found to be highly related to the distribution of inter- facial trap states and the existence of localized electric field respectively. These results might be helpful for optimizing the preparing procedures to realize high-performance silicon-based CdS optoelectronic devices.

First-principles calculations of the hole-induced depassivation of SiO2/Si interface defects

The holes induced by ionizing radiation or carrier injection can depassivate saturated interface defects.The depassivation of these defects suggests that the deep levels associated with the defects are reactivated,affecting the performance of devices.This work simulates the depassivation reactions between holes and passivated amorphous-SiO_(2)/Si interface defects(HP_(b)+h→P_(b)+H^(+)).The climbing image nudged elastic band method is used to calculate the reaction curves and the barriers.In addition,the atomic charges of the initial and final structures are analyzed by the Bader charge method.It is shown that more than one hole is trapped by the defects,which is implied by the reduction in the total number of valence electrons on the active atoms.The results indicate that the depassivation of the defects by the holes actually occurs in three steps.In the first step,a hole is captured by the passivated defect,resulting in the stretching of the Si-H bond.In the second step,the defect captures one more hole,which may contribute to the breaking of the Si-H bond.The H atom is released as a proton and the Si atom is three-coordinated and positively charged.In the third step,an electron is captured by the Si atom,and the Si atom becomes neutral.In this step,a Pb-type defect is reactivated.

Passivation and dissociation of P_(b)-type defects at a-SiO_(2)/Si interface

It is well known that in the process of thermal oxidation of silicon,there are P_(b)-type defects at amorphous silicon dioxide/silicon(a-SiO_(2)/Si)interface due to strain.These defects have a very important impact on the performance and reliability of semiconductor devices.In the process of passivation,hydrogen is usually used to inactivate P_(b)-type defects by the reaction P_(b)+H_(2)→P_(b)H+H.At the same time,P_(b)H centers dissociate according to the chemical reaction P_(b)H→P_(b)+H.Therefore,it is of great significance to study the balance of the passivation and dissociation.In this work,the reaction mechanisms of passivation and dissociation of the P_(b)-type defects are investigated by first-principles calculations.The reaction rates of the passivation and dissociation are calculated by the climbing image-nudged elastic band(CI-NEB)method and harmonic transition state theory(HTST).By coupling the rate equations of the passivation and dissociation reactions,the equilibrium density ratio of the saturated interfacial dangling bonds and interfacial defects(P_(b),P_(b)0,and P_(b)1)at different temperatures is calculated.

Effect of Metallurgical Behaviour at the Interface between Ceramic and Interlayer on the Si_3N_4/1.25Cr-0.5Mo Steel Joint Strength

By using newly developed CuNi5~25Ti16~28 B rapldly solidifled brazing filler the joining of Si3 N4/1.25Cr-0.5Mo steel has been carried out with interlayer method. If employing the interlayer structure of steel (0.2 mm)/W (2.0 mm)/Ni(0.2 mm), the joint strength can be increased greatly compared with employing that of Ni/W/Ni, and the three point bend strength of the Joint shows the value of 261 MPa. The metallurgical behaviour at the interface between Si3N4 and the interlayer has been studied. It is found that Fe participated in the interfacial reactions between Si3N4 and the brazing filler at the Si3N4/steel (0.2 mm) interface and the compound Fe5Si3 was produced. However, since the reactions of Fe with the active Ti are weaker than those of Ni with Ti, the normal inter facial reactions were still assured at the interface of Si3N4/steel (0.2 mm) instead of Si3N4/Ni (0.2 mm), resulting in the improvement of the joint strength. The mechanism of the formation of Fe5Si3 is also discussed. Finally, some ideas to further ameliorate and simplify the interlayer structure are put forward.

High-Pressure Oxidation on Ge:Improvement of Ge/GeO2 Interface and GeO2 Bulk Properties

On the basis of thermodynamic and kinetic consideration of Ge-O system,high-pressure oxidation(HPO)on Ge was proposed to suppress the GeO desorption during the thermal oxidation and significant improvements of Ge/GeO2-based gate stacks have been achieved.It is found that the post oxidation annealing at lower temperatures is helpful to passivate the interface defects at the Ge/GeO2 stack generated by the conventional thermal oxidation,while the high-quality GeO2 bulk properties can only be achieved by HPO that grows GeO2 film at high temperatures without the GeO desorption.This paper reviews the advantage of HPO on the formation of Ge/GeO2 stacks in terms of Ge/GeO2 interface and GeO2 bulk properties.

Microstructure of interaction interface between Al-Si,Zn-Al alloys and Al_2O_(3p)/6061Al composite

Interaction behaviors between Al-Si, Zn-Al alloys and Al2O)3p)/6061Al composite at different heating temperatures were investigated. It is found that Al2O)3p)/6061Al composite can be wetted well by AlSi-1, AlSi-4 and Zn-Al alloys and an interaction layer forms between the alloy and composite during interaction. Little Al-Si alloys remain on the surface when they fully wet the composite and Si element in Al-Si alloy diffuses into composite entirely and assembles in the composite near the interface of Al-Si alloy/composite to form a Si-rich zone. The microstructure in interaction layer with Si penetration is still dense. Much more residual Zn-Al alloy exists on the surface of composite when it wets the composite, and porosities appear at the interface of Zn-Al alloy/composite. The penetration of elements Zn, Cu of Zn-Al alloy into composite leads to the generation of shrinkage cavities in the interaction layer and makes the microstructure of Al2O)3p)/6061Al composite loose.

非化学计量比MnFe(P，Si，Ge)合金在低场下的磁热效应

通过XRD和磁性测量对非化学计量比MnFe(P,Si,Ge)合金的相组成和磁性进行了研究.xRD分析表明。所有样品都具有Fe_2P型六角结构,主相为(Re,Mn)_2(P,Si,Ge),并存在少量的第二相(Fe,Mn)_3(Si,Ge).过量的Mn和Fe都会使合金的Curie温度降低,由343K(化学计量比)降低到294K(过量Mn)和286K(过量Fe);过量的Mn能减小热滞,而过量的Fe会使热滞增加;磁熵变也有所减小,在1.5T的磁场下,最大磁熵变由5.2J/(kg·K)(化学计量比)减小到4.9J/(kg·K)(过量Mn)和3.8J/(kg·K)(过量Fe).

原材料Gd对Gd-Si-Ge合金巨磁热效应影响的研究

采用国产钆制作Gd-Si-Ge合金,测量H-M曲线,计算磁熵变(-ΔSm)判断其磁热效应。发现采用商业级钆配制合金时,由于杂质抑制了材料的一级相变,未发现巨磁热效应。经提纯后的钆尽管没有Ames实验室的纯度高,但配制的合金具有典型的一级相变,-ΔSm值基本上达到Ames实验室报道的数据,而且居里点有所提高。

热丝CVD法在单晶硅衬底上低温外延生长Si和Ge薄膜的研究

采用热丝CVD法在单晶Si衬底上进行了Si和Ge薄膜的低温外延生长,用XRD和Raman谱对其结构性能进行了分析。结果表明:在衬底温度200℃时,Si(111)单晶衬底上外延生长出了Raman峰位置为521.0cm-1;X射线半峰宽(FWHM)为5.04cm-1。结晶质量非常接近于体单晶的(111)取向的本征Si薄膜;在衬底温度为300℃时,在Si(100)单晶衬底上异质外延,得到了Raman峰位置为300.3cm-1的Ge薄膜,Ge薄膜的晶体取向为Ge(220)。研究表明热丝CVD是一种很好的低温外延薄膜的方法。