Group IV semiconductor alloys and heterostructures such as Si Ge,Ge Sn,Ge/Si and Si Ge:C have been widely used and under extensive research for applications in major microelectronic and photonic devices.In the growth ...Group IV semiconductor alloys and heterostructures such as Si Ge,Ge Sn,Ge/Si and Si Ge:C have been widely used and under extensive research for applications in major microelectronic and photonic devices.In the growth and processing of these materials,nanometer scale interdiffusion is common,which is generally undesirable for device performance.With higher Ge molar fractions and higher compressive strains,Si-Ge interdiffusion can be much faster than dopant diffusion.However,Si-Ge interdiffusion behaviors have not been well understood until recent years.Much less studies are available for Ge Sn.This review starts with basic properties and the applications of major group IV semiconductors,and then reviews the progress made so far on Si-Ge and Ge-Sn interdiffusion behaviors.Theories,experimental methods,design and practical considerations are discussed together with the key findings in this field.展开更多
基金Natural Science and Engineering Research Council of Canada(NSERC)Crosslight Software Inc.Lumerical Inc.for funding the Si-Ge interdiffusion studies at UBC
文摘Group IV semiconductor alloys and heterostructures such as Si Ge,Ge Sn,Ge/Si and Si Ge:C have been widely used and under extensive research for applications in major microelectronic and photonic devices.In the growth and processing of these materials,nanometer scale interdiffusion is common,which is generally undesirable for device performance.With higher Ge molar fractions and higher compressive strains,Si-Ge interdiffusion can be much faster than dopant diffusion.However,Si-Ge interdiffusion behaviors have not been well understood until recent years.Much less studies are available for Ge Sn.This review starts with basic properties and the applications of major group IV semiconductors,and then reviews the progress made so far on Si-Ge and Ge-Sn interdiffusion behaviors.Theories,experimental methods,design and practical considerations are discussed together with the key findings in this field.
