The energy-band structure and non-ultraviolet photoelectric properties of a Ni/n-Si/N^(+)-SiC isotype heterostruc-ture Schottky photodiode are simulated by using Silvaco-Atlas.There are energy offsets in the conductio...The energy-band structure and non-ultraviolet photoelectric properties of a Ni/n-Si/N^(+)-SiC isotype heterostruc-ture Schottky photodiode are simulated by using Silvaco-Atlas.There are energy offsets in the conduction and valance band of the heterojunction,which are about 0.09eV and 1.79eV,respectively.The non-UV photodiode with this structure is fabricated on a 6H-SiC(0001)substrate.𝐾J–V𝑊measurements indicate that the device has good rectifying behavior with a rectification ratio up to 200 at 5V,and the turn-on voltage is about 0.7V.Under non-ultraviolet illumination of 0.6W/cm^(2),the device demonstrates a significant photoelectric response with a photocurrent density of 2.9mA/cm^(2)and an open-circuit voltage of 63.0mV.Non-ultraviolet operation of the SiC-based photoelectric device is initially realized.展开更多
We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the ...We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 51177134the Natural Science Basic Research Plan in Shaanxi Province under Grant No 2012JQ8009+2 种基金Scientific Research Program Funded by Shaanxi Provincial Education Department under Grant Nos 12JK0546 and 12JK0975China Postdoctoral Science Foundation under Grant No 2013M532072Doctoral Scientific Research Foundation of Xi’an Polytechnic University under Grant No BS1129.
文摘The energy-band structure and non-ultraviolet photoelectric properties of a Ni/n-Si/N^(+)-SiC isotype heterostruc-ture Schottky photodiode are simulated by using Silvaco-Atlas.There are energy offsets in the conduction and valance band of the heterojunction,which are about 0.09eV and 1.79eV,respectively.The non-UV photodiode with this structure is fabricated on a 6H-SiC(0001)substrate.𝐾J–V𝑊measurements indicate that the device has good rectifying behavior with a rectification ratio up to 200 at 5V,and the turn-on voltage is about 0.7V.Under non-ultraviolet illumination of 0.6W/cm^(2),the device demonstrates a significant photoelectric response with a photocurrent density of 2.9mA/cm^(2)and an open-circuit voltage of 63.0mV.Non-ultraviolet operation of the SiC-based photoelectric device is initially realized.
文摘We report the performances of a chalcopyrite Cu(In, Ga)Se<sub>2 </sub>CIGS-based thin-film solar cell with a newly employed high conductive n-Si layer. The data analysis was performed with the help of the 1D-Solar Cell Capacitance Simulator (1D-SCAPS) software program. The new device structure is based on the CIGS layer as the absorber layer, n-Si as the high conductive layer, i-In<sub>2</sub>S<sub>3</sub>, and i-ZnO as the buffer and window layers, respectively. The optimum CIGS bandgap was determined first and used to simulate and analyze the cell performance throughout the experiment. This analysis revealed that the absorber layer’s optimum bandgap value has to be 1.4 eV to achieve maximum efficiency of 22.57%. Subsequently, output solar cell parameters were analyzed as a function of CIGS layer thickness, defect density, and the operating temperature with an optimized n-Si layer. The newly modeled device has a p-CIGS/n-Si/In<sub>2</sub>S<sub>3</sub>/Al-ZnO structure. The main objective was to improve the overall cell performance while optimizing the thickness of absorber layers, defect density, bandgap, and operating temperature with the newly employed optimized n-Si layer. The increase of absorber layer thickness from 0.2 - 2 µm showed an upward trend in the cell’s performance, while the increase of defect density and operating temperature showed a downward trend in solar cell performance. This study illustrates that the proposed cell structure shows higher cell performances and can be fabricated on the lab-scale and industrial levels.
